1.

Show that Ic=I

E
+ I
CBO
and discuss the parameters given in the equation.
The ratio of collector current to emitter current is called dc current gain or dc alpha
(
dc
) Of a transistor.


dc
=-Ic/I
E
or
Ic =-
dc
I
E

If we write
dc
simply as ,then
=-I
c
/I
E
or
I
c
=-I
E
The negative sign merely indicates that emitter and collector currents flow in opposite
direction (i.e. the conventional emitter current flows out and collector current enters into the
transistor)
The` of a transistor is a measure of the quality of a transistor, higher the value of ,
better the transistor in the sense that the collector current more closely equals the emitter current.
Its value ranges from 0.95 to 0.999.
For simplicity Ic=I
E

We know I
B
=I
E
-I
C

I
B
=I
E
-I
C

=I
E
-I
E

= (1-)I
E


ac
=-I
c
/I
E

It refers to change in collector current to change in emitter current.
=ac current gain
Total collector current:
The whole emitter current does not reach the collector because a small % of electron hole
combination occurring in the base area, it gives rise to base current.
Due to the reverse biasing of collector base junction wide depletion region is formed
across it, this depletion region helps the minority carriers of base(i.e. electrons) to cross the
collector base junction thus more collector current flows, in addition to this the leakage current
due to minority carriers also flows in the same direction.
Total collector is given by,
IC=I
E
+I
CBO

Where
I
CBO
=Leakage current. It is very small hence it is neglected in circuit calculation.

2. With the neat diagram explain the operation and input and output characteristics of CE
configuration.
CE configuration means the emitter terminal is common to the input and output.
In this case, i/p signal is applied between the base and emitter and o/p signal is taken out
from the collector and emitter terminals. The ratio of dc collector current to dc based current is
called dc current gain or just B
DC
of the transistor.
Bdc=I
C
/I
B

The collector current of a transistor is much larger than the base current. Therefore, the
value of B is much grater than unity.












While analyzing ac operation of a transistor, we use ac current gain which is given by,
Bac=I
C
/I
B
.

For all practical purposes B
dc
and B
ac
are considered to be equal.
Relation between and B:
=I
C
/I
B
and =I
C
/I
E



/=I
E
/I
B
We know,

I
B
=I
E
-I
C

=I
C
/I
E
-I
C
=

Cross multiplying the above equ. And simplifying it,
(1-)= or =(1+)
Thus =/1+
it is seen from the above equ.1&2
1-=1/1+
The above equ. Clearly shows that as ` approaches infinity, ` approaches to unity.
In other words the current gain in common emitter configuration is very high due to this
reason this circuit arrangement is used in all transistor application.
Total collector current:
In CE configuration I
B
is the i/p current and I
C
is the o/p current.
We know,IE=IC+IB
But I
C
=I
E
+I
CBO
=(I
B
+I
C
)+I
CBO

(I
C
-I
C
)=I
B
+I
CBO

I
C
(1-)=I
B
+I
CBO

I
C
=/1-I
B
+1/1-I
CBO
=I
b
+I
CBO

Where =/1- and I
CBO
/1-
Ic=I+I
CBO
Where
Icbo=leakage current in configuration.
=gain of transistor.
Characteristics of Common Emitter configuration:
The circuit for VI characteristics of CE configuration is shown in fig. It shows how the
input current I
B
varies with change in input voltage V
BE
while output voltage V
CE
is held
constant at a particular value.
To begin with, Voltage V
CE
is maintained constant at a convenient value and then V
BE
is
increased in steps. Corresponding values of I
B
are noted at each step. This procedure is then
repeated for different values of V
CE
.
A typical input characteristics is shown in fig. like CB Configuration, the overall shape
resembles the forward characteristics of a PN junction diode. The reciprocal of the slope gives
the input resistance R
IN
of the transistor.














The input characteristics give us the following information:
1. If a input voltage is less than a threshold or knee voltage then the base current is very
small. The value of the knee voltage is 0.7V for silicon and 0.3V for germanium. The
knee voltage can be defined as the voltage at which conduction starts.(i.e)input current
increases.
2. When the input voltages increases beyond the knee voltage, the depletion layer
disappears result is which the base current increases with the increases in base to emitter
voltage for a constant V
CE
. It may be noted that, the value of base current does not
increase as rapidly as that of the input characteristics of a CB configuration output
characteristics.
The output characteristic is shown in figure. It indicates the way in which I
C
varies with
changes in V
CE
when I
B
is held constant. For obtaining this characteristic, first I
B
is set to a
convenient value and maintained constant and then V
CE
is increased from zero in steps, I
C

being noted at each step. Next, V
CE
is reduced to zero and I
B
is increased to another convenient
value and the whole procedure is repeated.
It is seen that as V
CE
increases from zero, I
C
rapidly increases to a situation level for a
fixed value of I
B
. As shown in figure a small amount of collector current flows even I
B
= 0,
which is known as (I
CEO
) reverse situation current. Since actual collector current is zero, the
transistor is said to be cut-off region.
It may be noted that if V
CE
is increased continuously then depletion region in CB junction
increased, it increases I
C
rapidly and operates the transistor in achieve region as shown in
figure. Further increase in V
CB
causes avalanche break down in CB junction as a result of this
enormous I
C
will flow and the transistor enter into breakdown region.
5. Derive the drain current equation of a JFET.
Let,
V
DS
= Voltage applied between the drain and source
I
D
= Drain current
Then the cross section of the channel is given by,
A = zbw
Where,
zb = channel width for zero drain current for a given value of V
GS

w = channel dimension in that direction perpendicular to the b direction.
Since no current flows in the depletion region, the drain current is given by,
I
D
= Aq.N
D
M
n
E
e
= z bw.q..N
D
.M
n
.
L
V
DS

Where, L is the length of the channel, But we know that,
V
GS
=
e
V
b
a
2
1 |
.
|

\
|
(or)
|
|
.
|

\
|
=
e
GS
V
V
b
a
------------------ (6)

Sub the value of b in equation (5) we get,
I
D
=
DS
e
GS n D
V
V
V
L
M GWqN
(
(
(

|
|
.
|

\
|

2
1
1
2

6. Explain the short notes on UJT.
As the name implies, it has only one PN junction but it has a three terminal silicon diode.
It differs from an ordinary diode in the sense that it has three leads and also its difference from
BJT & FET is that it has no ability to amplify.
It has the ability to control large ac power with a small input signal. It also has the
negative resistance characteristics which makes it useful as an oscillator.
Construction
The basic construction of UJT is shown in figure. It consists of lightly doped N type
silicon bar sandwiched with heavily doped ptype material for producing single PN junction.
There are three terminals named as emitter E, two base terminals B
2
& B
1
and the arrow
points the direction of conventional current when UJT is in conducting State.









Equivalent circuit of UJT:
The equivalent circuit of a UJT is shown in figure. It consists of a diode and resistance
R
BB
. The diode D represents PN junction and R
BB
represents the resistance between Base B
2
and
Base B
1
or the total resistance of the silicon bar from one end to other with emitter terminal
opens, it is called as interpose resistance.
From Figure R
BB =
R
B1 =
R
B2






Intrinsic stand off ratio
A voltage V
BB
is applied across B
2
B
1
, there is a progressive fall of voltage over R
BB

provided E is open. The emitter act as a voltage divider taps on the resistance R
BB
.
The drop across R
B1
is given by potential division value.


|
|
.
|

\
|
+
=
2 1
1
B B
B
BB A
R R
R
V V
Voltage division factor is given a special symbol () and is known as Intrinsic stand off
ratio.

= 1
2 1
1
=
+
B B
B
R R
R
then V
A
= V
BB

7. With the constructional details, explain characteristics of enhancement type MOSFET.
(i). Drain Characteristics.
The drain characteristics for N channel enhancement type MOSFET is shown in
figure. It may be noted from figure.
That the gate to source voltage (V
GS
) is less than threshold voltage, V
GS
(th), there is
no drain current
However, in actual practice, an extremely small value of drain current does flow through
the MOSFET. This current flow is due to the presence of thermally generated electrons in the P-
type substrate. When the value of V
GS
is kept above V
GS
(th), a significant drain current flows.









(ii) Transfer characteristics of Enhancement type
The figure show the transfer characteristics for N-channel enhancement type MOSFET. It
may be noted from figure. There is no drain current when gate-to-source voltage V
GS
= o.
However, if V
GS
is increased above the threshold voltage, V
GS
(th), the drain current at any point
along the curve is given by the relation.
I
D
= K [V
GS
V
GS
(th)]
2


8. With the constructional details, explain characteristics of depletion type MOSFET











Drain characteristics of Depletion Type
The curves are plotted for both negative and positive values of gate to source voltage
(V
GS
).
When V
GS
is zero and negative, the MOSFET operates in the depletion mode.
If V
GS
is zero and positive, the MOSFET operate in the enhancement mode.
When V
DS
= 0, these is no conduction takes place between source to drain, if V
GS
< 0,
and V
DS
> 0 i.e. increased above zero volt, the drain current increases nearly as a result of V
GS
<
0 is applied to the gate induces positive changed holes in the channel and also it controls the
channel width thus the conduction I
D
is constant.
If V
GS
> 0 the gate induces more electrons in channel side, it is added with the free
electron generated by source. Again the potential applied to gate determines the channel width
and maintains constant current flow through it.
Transfer characteristics of Depletion type
The figure B show the Transfer characteristics for an N channel depletion type MOSFET
The drain current at any point along the transfer characteristics is given by,

I
D
= I
DSS

( )
2
1
|
|
.
|

\
|

of f V
V
GS
GS

The may be noted that even if V
GS
= 0, the device has a drain current equal to I
DSS
. Due
to this fact it is called normally ON MOSGET.
In depletion mode, when V
GS
= 0, maximum current will flow between source to drain
thus I
D
= I
DSS
similarly, when V
GS
increased continuously, after a certain extend the positive
changes induced by gate completely depletes the channel thus no drain current i.e V
GS
= V
P
.
In enhancement mode of increasing V
GS
> 0 more free electrons are induced in the
channel, thus it enhances the electron result in which I
D
increases.

9. Compare JFETs and MOSFETS

JFET MOSFET
1. It operates only in depletion
mode.
It operates both in enhancement and depletion mode.
2. Input impedance is less It has high input impedance
3. Drain resistance is high Drain resistance is less
4. Difficult ot fabricate Easier to fabricate
5. PN junction formed between
gate and channel
There is no PN junction due to S10
2
layer between
gate and channel it act as capacitor
6. JFET does not require any
additional protection circuits
MOSGET get damages easily, if they are not operated
properly thus additional protective ckts are needed.