1

Application Specific Exposure System (ASS) For Device Manufacturing

Ver1.4 Nov.2011

(Contents)

Introduction of Mejiro Precision,Inc.

General Market Trend and Overview of Mejiro Stepper

Introduction of Application Specific Exposure System (ASS)

Strategy for Device Production

3D Lithography by ASS

(Contents)

Introduction of Mejiro Precision,Inc.

General Market Trend and Overview of Mejiro Stepper

Introduction of Application Specific Exposure System (ASS)

Strategy for Device Production

Company overview
Mejiro Precision Confidential 4

Activities
Employees

Design, research and development of optical system

40

Mejiro Precision aims at Fab-less Company. The main business is research & development, and manufacturing has been consigned to the external cooperation company.

Business Composition
Mejiro Precision Confidential 5

Optical technology

Optics Reserch Institute

Light System Division

In three pole organization, The synergy effect is demonstrated.

Light Components Division

Stepper(projection exposure machine) Light source and optics irradiation unit Custom-designed optical system Objective lens

Organization
Mejiro Precision Confidential 6
Shareholders meeting Auditors Meeting Managing Board
Representative Director CEO Ichiyo Kotani Representative Director COO Seiro Murakami

Finance Administration Mamoru Nakagami

Business and Development Seiro Murakami

Optical Components Division Takayuni Nishio

Optical system Division Shinobu Tokushima

Designing Department Yukio Kakizakii

Optics Reserch Insutitute Satoru Anzai

(Contents)

Introduction of Mejiro Precision,Inc.

General Market Trend and Overview of Mejiro Stepper

Introduction of Application Specific Exposure System (ASS)

Strategy for Device Production

General Market Trend

Mejiro Precision Confidential 8
Step & Exposure Machine Contact/Proximity Contact Exposure Machine

Exposure machine for semiconductor Price

1 billion yen 0.3 billion yen i ray g ray 0.1 billion yen Electron rayX ray Excimer laser

Exposure machine for Exposure machine for Electronic circuit board & package

Application Specific Exposure System

0.1 billion yen

Line & Space

0.1 0.2

10

Exposure area

22 100200 150500

Overview of Mejiro Precision Stepper

Mejiro Precision Confidential 9

e Se r ie s

Expo su r e 200 200 355 355

Su bst r at e Size

Pr o du c t io n be gin n in g

Nu m be r s o f sale s

P80 4 P80 6 P14 1 P14 2

5 3.5 5 3.5

500mm x 600mm 500mm x 600mm 500mm x 600mm 5 0 0 m m 6 0 0 m m

2003 2 0 0 8 / spr in g 16 2 0 0 9 / spr in g 2 0 1 2 / spr in g

PC B & pac kage

10-20

0.5-1.0

300mm x 300mm 2 " - 1 2 " W afe r 300mm x 300mm 2 " - 1 2 " W afe r 300mm x 300mm 2 " - 1 2 " W afe r

SAW , ASIC

2 0 1 0 / spr in g

20-50

1-2.5

LED, M EM S, LC D advac e d pac kage , c e r am i c

2 0 0 9 / su m m e r

50-110

2.5-

2 0 0 9 / su m m e r

Spec ial

100

300mm x 300mm 2 " - 1 2 " W afe r

LED, M EM S

2 0 1 1 / au t u m n

(Contents)

10

Introduction of Mejiro Precision,Inc.

General Market Trend and Overview of Mejiro Stepper

Introduction of Application Specific Exposure System (ASS)

Strategy for Device Production

Introduction of ASS
Mejiro Precision Confidential 11

Introduction of ASS (Application Specific Exposure System)

Concept Achievement of Wide Exposure Specification Practicable Productivity Module Concept for High Cost Performance Back-Side Alignment Substrate Holder Edge Blind Mechanism Small and lightweight

Concept
Mejiro Precision Confidential 12

Demand for stepper from markets other than mass production field

Wide-ranging exposure specification Wide-ranging exposure specification

One exposure machine can correspond to various applications. has Multi generation character that can correspond to the future miniaturization

High Throughput High Throughput

It is not a mere experimental exposure machine.

Low price Low price

Achievement of Wide Exposure Specification

Mejiro Precision Confidential 13

Introduction of NA changeable mechanism

Open NA aperture

Squeeze NA aperture.

NA is large. (high resolving power) Exposure area is small

NA is small (low resolving power) Exposure area is large

Achievement of Wide Exposure Specification

Mejiro Precision Confidential 14

- Continuously Covered with Three Kinds of Lenses

Lens Series and Application Range
120 110 100
1 1 0

Exposure field diameter, mm)

90 80 70 60 50 40 30 20 10 0

Ele c t r o n ic c ir c u it bo ar d & pac kage

LensA LensB LensC

Len sCk

Th in film magn e t ic h e ads Ce r amic 5 0

2 0 1 0

Resolving power

Achievement of Wide Exposure Specification

Mejiro Precision Confidential 15

Lenses can be exchanged at the customer site.

A lens B lens C lens

Main body of stepper

The total length of lens

The total length of three kinds are uniformed Lenses can be exchanged in one week at the customers site

A wide exposure specification and a multi generation are enabled with one exposure machine.

Achievement of Wide Exposure Specification

Mejiro Precision Confidential 16

Lenses Exchange mechanism

Lens B Lens

Main Body

Projection Flame

Easy exchange on customers site

Mejiros engineer can change the lens on customers manufacturing area.

Short period work schedule

Changing lens and Readjust within 1 week , and checking within 0.5 week.

Practicable Productivity
Mejiro Precision Confidential 17

High Throughput
The technology of stepper (MMS) for electronic circuit board and the package mass production was applied as it was. Small size and lightweight X/Y stage
( 300mmx300mm 12 stroke capability )

Optical system of high illumination Real-time AF mechanism Global alignment function

High throughput ( 30 second / 12 "Wafer substrate) A small-scale production line can be constructed.

Module Concept for High Cost Performance Module Concept

Lamp Reticle change system Illumination optics

Mejiro Precision Confidential 18 ASS stepper is composed of a lot of independent functional elements (more than 50 kinds of modules). An individual module corresponds to all the possible function variations with the possibility that the customer uses it. The module can be assumed that all are optional, and be selected.

Reticle system

Projection lens

The minimum requirement can be composed for the customer.

Substrate transfer system Substrate stage

modular framework

High Cost Performance

Back Side Alignment

Mejiro Precision Confidential 19

Surface alignment

Back side alignment

Alignment Microscope

Alignment mark

Back Side mark

Prism by return

Substrate Holder
Mejiro Precision Confidential 20

Substrate

Peripheral Cramp Skirt

Vacuum by Sponge type material(

Stage Holder for substrate

Soft vacuum contact by innumerable air hole

Flatness is secured without damaging the substrate.

Small and Lightweight

Mejiro Precision Confidential 21

ASS front face

ASS side face Total Weight 1.5 ton

(Contents)

22

Introduction of Mejiro Precision,Inc.

General Market Trend and Overview of Mejiro Stepper

Introduction of Application Specific Exposure System (ASS)

Strategy for Device Production

Strategy for Device Production

Mejiro Precision Confidential 23

Strategy for Device Production

1. Advanced Technology for Enhanced Resolution 2. Lithography Roadmap & Mejiro Strategy

1-1 Advanced Technology

Mejiro Precision Confidential 24

Advanced Technology for Enhanced Resolution

Resolution =

NA High

NA Low

Depth of Focus =

Defocus

Image Contrast Large Change

Image Contrast

1-2 Advanced Technology

Mejiro Precision Confidential 25

Higher NA lens can resolve critical dimension pattern, but reduces focus depth rapidly. When high NA is used for the rough pattern, the focus depth becomes shallow. In the rough pattern, large DOF can be obtained by lower NA according to pattern size.

Fine IC,LSIDRAM, CPU Logic, etc) Super Flat1 No DOF Requirement Larger NA Finer Pattern

Package, Bump, LED, Ceramic, MEMS. Large10100500 Large DOF Requirement Optimum NA Maximum DOF

1-3 Advanced Technology

Mejiro Precision Confidential 26

DOF Comparison in NA 0.3 Fixed NA

NA 0.2 Fixed NA NA 0.2 with Variable NA

1-4 Advanced Technology

Mejiro Precision Confidential 27

Introduction of Variable NA Optics enables to obtain best resolving power (maximum DOF) at various pattern size.

Sub-micron pattern generation 10.8 Resolution Enhancement technology (RET) can enable much higher resolution and depth of focus. ASS stepper can introduce Annular Illumination as RET. By Annular Illumination introductionDOF increase is 20-30% compared to conventional illumination in optimum condition. 0.8 It is possible to correspond to 0.5m pattern by exchanging for A lens.

As a result, deep focus depth can be secured in each generation of device manufacturing.

2. Lithography Roadmap & Mejiro Strategy

Mejiro Precision Confidential 28

Single machine for Multiple Lithgraphy generations

+ + Annular

Replace from Lens

Mejiro Precision Confidential

29

September, 2011

lithography by ASS stepper

Mejiro Precision Confidential

ASS and Depth of Focus (DOF

NA 0.06 L/S 4um DOF 100 um

30

Lens Series and Application Range

12 0 11 0 10 0
1 1 0

Exposure field diameter, mm)

90 80 70 60 50 40 30 20 10 0

Ele c t r o n ic c ir c u it bo ar d & pac kage

Le nsA Le nsB Le nsC

NA 0.09 L/S 2.5um DOF 45 um

Th in film magn e tic h e ads Ce r amic 5 0

NA 0.2 L/S 1um DOF 10 um

2 0 1 0

Resolving power

Mejiro Precision Confidential

Basic concept
31

Resolution Limit Non-resolved pattern

st iffracted light

+st Diffracted light

The 0th light

Mejiro Precision Confidential

Control of reticle transmittance ratio by non-resolved dot pattern

32

Area 50um2 1um non-resolved dot

Transmittance 80% Intensity 64%

90% 81%

Mejiro Precision Confidential

Reticle making for 3D exposure

33

The reticle with continuous density distribution is made corresponding to three dimension forming. The density is decided by the number of patterns of the non-resolved dot for each area.

Non-resolved dot such as 1um

Light intensity distribution after reticle penetration It corresponds to 3D forming.

Mejiro Precision Confidential

Absorption energy and resist dissolution depth

34

The relation between absorption energy (E) by the exposure and resist dissolution depth (Z) are experimentally decided.
E1 E2 E3 Plot Z2 Z3

E1

Resist thickness

Z1

E2 E3 Emin. Z3 Z2 Z1 z

Dissolution depth function Z = D (E) is decided. E(Z) corresponding to dissolution depth Z is calculated. E(Z) = D (Z)
-1

Mejiro Precision Confidential

35

Without thickness correction

With thickness correction by dissolution depth function Z = D (E)

36

Presentation is ended above. Thank you for listening.