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After system design & design partitioning, the next step in our design flow is to create the circuit design for the Power Amplifier. Well design a PA here with the assistance of two of the DesignGuides (Passive Circuit and Power Amplifier), which are new in ADS 1.3.
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Maximize Power: Matching to the Load-Line Impedance Simulation: Gain, input Match, and output Load Resistance Comparison with Measurement Data
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Supporting Infrastructure System Library System Library Design Libraries Design Libraries Vendor Libraries Vendor Libraries Transmission Line Models Transmission Line Models Foundry Libraries Foundry Libraries Layout Footprints Layout Footprints
Synthesis, Utilities Synthesis, Utilities and Optimization and Optimization Data Processing Data Processing
Circuit Design Circuit Design FF EE EE DD BB AA CC KK Layout Layout EM-Simulation EM-Simulation Manufacturing Manufacturing Hardware Deliverable Customers Customers
Simulation Deliverable
During this module, well be focusing on taking a design from the System Level and the specifications allocated and create a circuit design. The particular parts of the design flow highlighted will be addressed in this paper.
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800mW or +29 dBm >30% 12.5% (RMS) max 6 dB max +/-6.5 VDC
23 dB PAE at Pmax +6.5V 140 dBm/Hz EVM VSWR<2:1 (50 ohms) Noise Figure (Loaded VSWR<2:1) Vsupply < -70 dBc <30 dBc for 2fo and 3fo
Here are the specifications obtained after the system design partitioning. For this paper, were going to focus on the specifications in italics. Since we are concerned with getting maximum power from our device, the device will exhibit nonlinear characteristics which must be managed to meet specifications, these include PAE & Harmonic levels.
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DC/Operating Point (Load Pull vs. Load Line) Matching Networks (Gain, Match, NF, Stability) Performance Testing (Simulation) Layout (Build)
Driver Stage
Power Stage
Overall Gain - 23 dB ATF-21170 - Driver Amplifier Stage - 13 dB gain MGF-2430A - Power Amplifier Stage - 10 dB gain
The design starts with budgeting and device selection to achieve the final goals. The optimum number of stages are determined for the required gain. The final stage device is selected to achieve the required output power, whereas the preceding stage device is selected to drive the final power stage. If a high degree of linearity is desired, the driver stage should be chosen so that when the final stage is driven into compression, the driver stage is several dB below its compression point. The proper bias point is selected and impedance matching is then carried out to complete the design. Power amplification in RF frequency bands can be accomplished by using any one of many different devices, e.g. Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistor (MOSFET), GaAs Metal Semiconductor Field Effect Transistor (MESFET), Hetro Junction Bipolar Transistors (HBT), etc. At 1.9 GHz BJT, HBT, and MESFET are good candidates for the required gain and output power. The transistors selected for this design were MESFETs MGF 2430A for the output power stage and ATF 21170 for the driving stage. MGF2430A is a good candidate for this amplifier design because it is capable of giving +29 dbm output power with +10db gain. ATF21170 MESFET provides maximum available gain of +13 dB at the required frequency and therefore selected for this application.
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Now we begin to think about the actual circuit design and the design software well use. Setting up your simulation environment to get the results you want can be complex. Detailed design and simulation knowledge to properly set up the topology and the associated equations for processing data. It can also take significant time to validate the setup. Some organization are fortunate enough to have the expertise to create complex simulation setups, but many do not. And even those that do have a few people with the expertise, not every designer has the same level of expertise. Finally, when someone does create their own simulation setups, they usually involve numerous equations with complex data displays, each of them are prone to errors. Everything in DesignGuides could be duplicated by someone with the right design experience as well as the right simulation expertise. However, DesignGuides: - reduce time consuming simulation setup. - eliminate error-prone experimentation with syntax. - provide convenience through extensive use of linked variables.
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Applications
Linear Nonlinear Circuit Envelope Time Domain Agilent Ptolemy Electromagnetic Others
RF IP Encoder
LIBRARIES LIBRARIES
Design Libraries
APPLICATION CONTENT APPLICATION CONTENT
DesignGuides
SYNTHESIS SYNTHESIS
RF Compiler/E-Syn/LineCalc
AUTOMATION AUTOMATION
DesignGuides bridge the gap between simulation technology and the specific design need or application by providing the design expertise within an application layer that runs within the ADS environment. Test setups are predefined so that the user need only set the appropriate simulation values and configure their test circuit. The data display is set up to present the main circuit performance and specifications. Many circuits require a standard set of performance tests. With DesignGuides there is no need to reinvent simulation setup and data processing.
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Design expertise built in
Passive Circuit DesignGuide Distributed Elements microstrip Automatically sets up simulation & data display with relevant measurements
Measure
This is the design flow we will use for designing our PA. It has five stages. Well begin our design flow with the design of the driver stage. And well use a linear S-parameter model which eliminates the need to focus on DC/Operating Point characteristics of the device. Well spend more time on this step later when we design the power stage. For now well focus on designing input & output matching networks for the first device. We have two choices that will assist in creating these matching networks, E-Syn or the new Passive Circuit DesignGuide. You may already be familiar with E-Syn, so today well use the DesignGuide.
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Design expertise built in
The first step will be to determine the optimum impedance for maximum gain. To do this, well use the Power Amplifier DesignGuide.
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Design expertise built in
The driver stage can be designed using small signal techniques using DesignGuides. The Power Amplifier DesignGuide is used to determine maximum available gain, stability factor, simultaneous source, and load impedance. The Passive Circuit DesignGuide is used to synthesize the input and output matching networks. When designing amplifiers, stability is always a concern. The Power Amplifier DesignGuide allows analysis and optimization of amplifier stability. However, this wont be presented in this paper. We did add a series resistive load to stabilize the amplifier, which is necessary to design the matching network. *Amplifiers can be unstable when terminated with certain load and source impedances. The stability problem resulting from drain to gate coupling can be overcome by various well-known techniques, but these tricks are generally inappropriate for power amplifiers because of the requirement for greater efficiency. This problem is generally solved through the brute-force method of degrading the input impedance through use of a resistor at the input to reduce feedback. In addition to increasing the stability, this series resistor also improves the input mismatch by making the input slightly insensitive to power level. Unfortunately, the side effect of adding a series resistance at the input is a reduction in the gain of the amplifier and an increase in noise figure. Therefore, we must be careful to choose a small value of resistance, just enough to meet the required performance.
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Design expertise built in
Here is the data display that is automatically generated. It has results for various measurements, but well focus on the Matching for Gain area.
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The DesignGuide tells us that for maximum gain the impedance of the input matching network needs to be the Zsource value indicated.
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Control Palette
Next, well use the Passive Circuit DesignGuide to synthesize the input matching network. Well select the control palette which will bring a set of icons for easy operation of the DesignGuide. Well select the matching network icon which brings up a component palette. Well choose a distributed, single stub matching network.
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Design expertise built in
The single stub matching networks requires that you specify Zin & Zload (the conjugate match of Zsource provided in the data display). Pressing the Design Icon, the DesignGuide creates a matching network (a shunt open stub followed by a series line).
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Design expertise built in
We can also display the simulation results of the matching network. At this point, you also have the option to optimize the results to improve performance of the matching network.
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R DA_SSMatch1_NF_SP_Stability R1 DA_SSMatch1 R=20 Ohm Subst="MSub1" F=1.88 GHz Zin=50 Ohm Zload=16.425-j*46.474
We can now design an output matching network using the same technique and have done so above. Weve chosen to design the output to 50 ohms, although we could have designed an interstage match directly to the input of the power stage. Amplifier gain, input, and output reflection coefficients of this driver amplifier stage are shown above.
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Power Stage
Driver Stage
Output impedance varies w/output power Ideal impedance exists for each output power Two techniques to design output match Load-pull technique Load-line analysis
Low power
Measure
22
High power
Designing the output-match network for power amplifiers is different from the complex-conjugatematching technique used for small-signal linear amplifiers. This is because the output impedance (S22) of power devices varies as a function of output power. In general, an ideal termination impedance exists, which maximizes the output power available from the amplifier. The goal of the output-matching network is to transform 50 ohms into this ideal impedance. Unlike the conjugate match technique used to maximize gain, here we trade-off gain for the purpose of achieving maximum output power. There are two basic ways to find the ideal output impedance that must be presented to the power device of the amplifier. One is to perform a load-pull analysis (either simulated or with actual measurements), and the other is to design a matching network based on the physical model of the output device, load-line analysis. Then, the device is terminated with this load impedance and the source is conjugate matched to provide maximum gain.
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Imax/2
Vs
Vb
Load-Pull Method Complicated measurement Load-Pull Contours easily generated w/ ADS Greatest Accuracy -- Optimum Load Impedance
Power amplifier design requires device characterization for power, efficiency, and reflection coefficients as a function of input power level. Bias conditions, output circuit loss, load impedance, and gain are the major design considerations to achieve the required amplifier performance. To design a power amplifier, many designers use the optimum load impedance data provided by the device supplier, but this technique does not allow accurate prediction of measurement such as PAE, Harmonic distortion, Compression point, and of course Gain. The power amplifier design techniques can be divided into two categories, namely, Load-Pull method and Load-Line approximation method (Cripps method). The load-pull data, typically supplied by the manufacturer, provides the load impedance that corresponds to different output power levels. For any output power less than maximum, there is a locus of impedance values that form a closed contour on the output impedance plane. For maximum power, the contour converges to a single point. From the load contours, a designer can find out optimum load impedance to design an output matching network for maximum power transfer. The Cripps method is used to calculate optimum load impedance for maximum power transfer. The load impedance can be determined by using the DC-IV curves and device operating biasing point.
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Ropt= Vds/Idmax
1.3 x Idss = Idmax
1.3 Idss
Vds
Vmin Vnom Vnom + (Vnom - Vmin) = Vmax
A load-line analysis is a technique for finding the optimum impedance to present to the output stage of the power amplifier. If we look at the I-V curves for a FET, we see that there is a useable region for both drain current and drain-to-source voltage. For drain current, we generally use the region between 0 and 1.3 x Idss. To keep the output voltage within the linear region of the FET, we avoid the steep-sloped areas of the I-V curves.
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Design expertise built in
Well use the Power Amplifier DesignGuide to generate the DC-IV curves for the MGF 2430A transistor. To analyzer the operating characteristics for the FET, well use the Power Amplifier DesignGuide> DC & Bias Point Simulations>FET I-V Curves, Class A Power Efficiency, Load, Gm vs. Bias. This setup will provide us with Rload.
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Design expertise built in
The automatically generated data display directly gives the optimum load impedance required for maximum power transfer under class A operation of the device. The DesignGuide also provides user interactive control to optimize the output power DC to RF efficiency and calculates load resistance for user defined drain voltage. Well focus on Rload for design of our matching network.
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Marker m1 bias point values, (Assuming Class A, AC current limited to marker m2 value and AC voltage no higher than VDSmax.) Output Power Watts dBm 794.4m 29.00 Rload 18.353 DC-to-RF Efficiency,% 36.28 DC Power Consumption 2.190
Using the DesignGuide, the DC bias analysis is carried out for the MGF 2430A and Rload is calculated. The values of Cds and Ld are taken from the device model data. The next step is to design the output matching network to match the above equivalent circuit to 50 ohms. Various topologies are possible to accomplish the required matching network; however, as the bandwidth is small, a simple matching network can be realized to give required return loss. The nature of the output impedance and its matching are more critical than the input impedance since it also determines the overall efficiency of operation, whereas the input matching only relates the input return loss. The output matching network requires a simple quarter wave transformer design between 18 ohm and 50 ohm. This is synthesized by using the Passive Circuit DesignGuide in a manner similar to the single stub network synthesized earlier.
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X Input Tuner
DUT
X Output Tuner
Constant output power contours versus output load impedance (input power constant)
The load-pull measurement technique is based on the measured behavior of an amplifier. Detailed understanding of the physical models of the devices involved is not necessary. The procedure for performing a load-pull analysis is to present the output of the amplifier with a variety of load impedances while simultaneously measuring the output power. The input match is adjusted each time as well to ensure a well-matched condition at the input of the amplifier. This process is repeated with several different input-power levels. After all of the data is taken, contours of constant output power are plotted on the Smith chart. If the input power presented to the amplifier was large enough, a single point on the Smith chart appears where the output power was at a maximum. This is the impedance that we must present to the output of the amplifier. The tuners used to vary the input and output matches can be based on mechanical-slug tuners or pin-diode-based electronic tuners. Mechanical tuners excel in high-power applications because of their inherent low-loss when it is necessary to characterize an amplifier with highly reflective impedances. Electronic tuners provide very fast and repeatable measurements. (Maury Microwave is one supplier of such load-pull systems.) In the majority of cases, designers will typically use either a load-line analysis or a load-pull simulation.
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The easiest alternative to either a load-line analysis or a load-pull measurement is a load-pull simulation. Load-pull simulation is easier, faster, and more accurate than the load-line analysis. Load-pull simulation is simpler, quicker, and far less expensive than a load-pull measurement system. For each specific impedance value, the Advanced Design System evaluates the corresponding output power level and displays it on the Smith chart. The Power Amplifier DesignGuide provides the setup and equations to perform a load-pull simulation. All you need to do is place your device into the schematic, adjust the bias voltages appropriately, set the power levels, and specify the region on the Smith chart where youd like the load-pull data for.
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Lets take a moment and provide a brief view of some of the design & simulation expertise details that are behind the DesignGuides. Here we show some of the equations that are used in the DesignGuide just to run the Load-Pull simulation and to view the results. The value of the DesignGuides is the ability to run load-pull simulations without having to have the detailed design & simulation expertise needed to create these equations on your own.
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As you can see, the results are similar to the load-line technique. This time though we have a specific impedance to design to.
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The load-pull simulation gives us the load impedance value with which we should terminate our FET. The model used in the load-pull simulation is the packaged FET model, therefore the resulting load impedance includes the parasitics of the FET and package built-in to the analysis.
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Goal
Here is our completed power stage after designing the input and output matching networks. The simulation results show that we are meeting our specifications for this stage.
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Driver Stage
Now, lets build the completed amplifier.
Power Stage
Here is the completed schematic including the bias circuitry, SMT library parts, vias, and appropriate microstrip elements such as bends, tees, etc., to provide a completely accurate model of the amplifier. The biasing network was designed along with resistive divider network to drive gate voltage from available 6.5 V. Biasing network design plays an important role in the success of the power amplifier performance. The DC bypass capacitors value has to be carefully chosen to avoid any oscillation at low frequencies. The packages dimensions of SMT passive devices can lead to undesired resonance and have to carefully be chosen to shift any resonance to much higher than operating frequencies. At this stage, the ideal lumped devices are replaced by passive SMT models, the distributed parasitics were added next along with the discontinuities, and the amplifier was further optimized for the required performance. Note : Commercially available inverter can be used to generate 6.5 V from available + 6.5 V supply.
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Design expertise built in
DC/Operating Point (Bias Network) Matching Networks (Gain, Match, Stability) Performance Testing (Simulation) Layout (Build) Measure (Model Validation)
Well again use the Power Amplifier DesignGuide, but this time for performance testing. Well test only the specifications that we identified earlier, but you can perform all of the common amplifier performance tests with the Power Amplifier DesignGuide including two-tone tests. The Power Amplifier DesignGuide is focused on performance testing of amplifiers. It provides over 40 pre-defined simulations and corresponding data displays for the following common performance tests. Simulation topics include: -DC & Bias Point -S-Parameter -1&2 Tone Harmonic Balance -Matching Circuits
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Design expertise built in
Here is the simulation setup for Gain, Harmonic Distortion vs. Power, and PAE.
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Design expertise built in
And the automatically generated data display. Well focus just on the boxed results.
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Design expertise built in
The 1dB gain compression of an amplifier is a power point where the gain of the amplifier reduces by 1 dB. At the power level greater than gain compression point, the amplifier will generate very high harmonic distortion components. The plot shows gain as a function of input power. The gain meets the specifications of 23 dB.
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Design expertise built in
All amplifiers generate undesired multiples of the fundamental frequency at the output called harmonics, which are caused largely by the nonlinearity of the transistors used in the design of power stage. The specification defines the maximum harmonic level the amplifier can produce at the output and is defined relative to the input power level (dBc). The curves show the output of the 2nd and 3rd harmonics in dBc as a function of input power.
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Design expertise built in
Power Added Efficiency is defined as the ratio between the RF gain of the device and DC power. PAE=(Pout-Pin)/PDC The above plot shows PAE as a function of input power. Note that the efficiency increases as the input power increases, up to the 1 dB gain compression point and after that the PAE drops. Transistor bias in the main determinant of device efficiency. To increase the PAE, the designer may need to change the bias, use more stages or select a larger transistor. The efficiency in this case is low because we are operating the device at a relatively low voltage.
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Final layout of the amplifier is shown above. The complete design was confined in to a dimension of 2 X 1 inch. This layout was created with ADS using the design synchronization capability.
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Measured
m3 m4
Measured
m1 m2
Simulated
30 29 28 27 26 25 24 23 22 21 20 1.85 1.86
dB(fmeasuredamp..S(2,1)) dB(S(2,1))
Simulated
1.87
1.89
1.90
1.91
Measured
m3 freq=1.880GHz dB(fmeasuredamp..S(2,1))=25.553
Measured
m1 freq=1.894GHz fmeasuredamp..S(1,1)=0.153 / 130.040 impedance = 40.040 + j9.580 m2 freq=1.893GHz S(1,1)=0.127 / 139.708 impedance = 40.648 + j6.795
Simulated freq=1.880GHz
m4
dB(S(2,1))=25.090
Simulated
Here are the measurements of the input match and gain for the amplifier.
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Product specications and descriptions in this document subject to change without notice. Agilent Technologies, Inc. 2008 Printed in USA, November 01, 2000 5989-9090EN