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MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 40 60 40 6.0 5.0 200 200 Unit Vdc Vdc Vdc
3
mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT3904WT1 = AM MMBT3906WT1 = 2A
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO MMBT3904WT1 MMBT3906WT1 V(BR)CBO MMBT3904WT1 MMBT3906WT1 V(BR)EBO MMBT3904WT1 MMBT3906WT1 IBL MMBT3904WT1 MMBT3906WT1 ICEX MMBT3904WT1 MMBT3906WT1 50 50 50 50 nAdc 6.0 5.0 nAdc 60 40 Vdc 40 40 Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996
ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE MMBT3904WT1 40 70 100 60 30 60 80 100 60 30 VCE(sat) MMBT3904WT1 MMBT3906WT1 VBE(sat) MMBT3904WT1 MMBT3906WT1 0.65 0.65 0.85 0.95 0.85 0.95 0.2 0.3 0.25 0.4 Vdc 300 300 Vdc
MMBT3906WT1
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 td tr ts tf 35 35 35 35 200 225 50 75 ns
ns
+3 V +10.9 V 10 k 275
t1
+3 V +10.9 V 275 10 k
TJ = 25C TJ = 125C 10 MMBT3904WT1 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MMBT3904WT1
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
TIME (ns)
tr @ VCC = 3.0 V
40 V 15 V 2.0 V 50 70 100
IC/IB = 20 IC/IB = 10
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA IC = 100 mA
f, FREQUENCY (kHz)
20 10 5
100 70 50
2 1
30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.1
0.2
5.0
10
MMBT3904WT1
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MMBT3904WT1 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500 300 200 100 TIME (ns) 70 50 30 20 10 7 5 tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) MMBT3906WT1 IC/IB = 10
500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 MMBT3906WT1 IC/IB = 20 VCC = 40 V IB1 = IB2
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
3.0
1.0
SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz)
0 0.1
Figure 25.
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 MMBT3906WT1 200 hfe , CURRENT GAIN hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 MMBT3906WT1
100 70 50
10 7.0 5.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
30 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
MMBT3906WT1
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 30. Voltage Feedback Ratio Motorola SmallSignal Transistors, FETs and Diodes Device Data
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
55C TO +25C
0.2
VCE(sat) @ IC/IB = 10
20
40
180 200
0.025 0.65
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 100C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. The soldering temperature and time shall not exceed 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C 25C 833C/W = 150 milliwatts
The 833C/W for the SOT323/SC70 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT323/SC70 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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A L
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2
V G
C 0.05 (0.002)
R N K
DIM A B C D G H J K L N R S V
INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016
MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40
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*MMBT3904WT1/D*