Chng 5: Transistor hiu ng trng

88
Chng 5
TRANSISTOR HIU NG TRNG
Nh bit chng 4, BJT l Transistor mi ni lng cc c tng tr vo nh
cch mc thng thng. Dng I
C
= I
B
, mun dng I
C
cng ln ta phi tng dng I
B
(thc
dng ng vo). chng 5 s tm hiu v transistor hiu ng trng (FET Field Effect
Transistor). FET c tng tr vo ln, dng ng ra c thay i bng cch thay i in
p ng vo hay ni cch khc dng gia cc mng (cc thot) (D) v cc ngun (S)
c iu khin bi in p gia cc cng (G) v cc ngun (S).
5.1. JFET
5.1.1. Cu to k hiu
JFET (Junction Field Effect Transistor) c gi l FET ni.
JFET c cu to nh
hnh 5.1.
Trn thanh bn dn
hnh tr c in tr sut
kh ln (nng tp cht
tng i thp), y trn
v y di ln lt cho
tip xc kim loi a ra hai
cc tng ng l cc mng
(cc thot) v cc ngun.
Vng theo chu vi ca thanh bn dn ngi ta to mt mi ni P N. Kim loi tip xc
vi mu bn dn mi, a ra ngoi cc cng (ca).
D: Drain: cc mng (cc thot).
G: Gate: cc cng (cc ca).
S: Source: cc ngun.
Vng bn dn gia D v S c gi l thng l (knh). Ty theo loi bn dn gia D
v S m ta phn bit JFET thnh hai loi: JFET knh N, JFET knh P. N c k hiu nh
hnh 5.2.





P
D D
N
N
P P G
S
N G
S
(b) (a)
Hnh 5.1. Cu to ca JFET knh N (a), JFET knh P (b).
(a) (b)
Hnh 5.2. K hiu ca JFET knh N (a), JFET knh P (b).
Chng 5: Transistor hiu ng trng
89
Thc t, cu to ca
JFET phc tp hn. in
hnh l vi cng ngh planar
epitaxy, cu trc JFET
knh N nh hnh 5.3. Cc
cc D, G, S u ly ra t trn
b mt ca phin bn dn.
Cc vng N
+
to tip xc
khng chnh lu gia cc
mng, cc ngun vi knh dn loi N. Vng P
+
ng vai tr cc cng. Lp cch in
SiO
2
bo v b mt.
5.1.2. Nguyn l vn chuyn
Gia D v S t mt in p V
DS
to ra mt in trng c tc dng y ht ti a s
ca bn dn knh chy t S sang D hnh thnh dng in I
D
. Dng I
D
tng theo in p
V
DS
n khi t gi tr bo ha I
DSS
(saturation) v in p tng ng gi l in p tht
knh V
PO
(pinch off), tng V
DS
ln hn V
PO
th I
D
vn khng tng.
Gia G v S t mt in p V
GS
sao cho khng phn cc hoc phn cc nghch mi
ni P N. Nu khng phn cc mi ni P N ta c dng I
D
t gi tr ln nht I
DSS
. Nu
phn cc nghch mi ni P N lm cho vng tip xc thay i din tch. in p phn
cc nghch cng ln th vng tip xc (vng him) cng n rng ra, lm cho tit din ca
knh dn b thu hp li, in tr knh tng ln nn dng in qua knh I
D
gim xung v
ngc li. V
GS
tng n gi tr V
PO
th I
D
gim v 0.
5.1.3. Cc cch mc c bn ca JFET
a. JFET mc kiu cc ngun chung (Common Source CS)
Mch dng JFET mc kiu cc ngun chung (Common Source CS) nh hnh 5.4.










Hnh 5.4. JFET mc kiu cc ngun chung.
b. JFET mc kiu cc cng chung (Common Gate CG)
V
i

C
1

V
O

C
2

+Vcc
R
D
R
G R
S
N-Si
P-Si
S G D
SiO
2

Vng
ngho
N
+
N
+ P
+
Hnh 5.3. Cu trc JFET ch to theo cng ngh planar.
Chng 5: Transistor hiu ng trng
90
Mch dng JFET mc kiu cc cng chung (Common Gate CG) nh hnh 5.5.










Hnh 5.5. JFET mc kiu cc cng chung.
c. JFET mc kiu cc thot chung (Common Drain CD)
Mch dng JFET mc kiu cc thot chung (Common Drain CD) nh hnh 5.6.










Hnh 5.6. JFET mc kiu cc thot chung.
CS: Tn hiu vo G so vi S, tn hiu ra D so vi S.
CG: Tn hiu vo S so vi G, tn hiu ra D so vi G.
CD: Tn hiu vo G so vi D, tn hiu ra S so vi D.
5.1.4. c tuyn ca JFET
Kho st s thay i dng thot I
D

theo hiu in th V
DS
v V
GS
, t
ngi ta a ra hai dng c tuyn ca
JFET.
V
DS
l hiu in th gia cc D v
cc S.
V
GS
l hiu in th gia cc G v
cc S.
V
0

C
1

V
i

C
1

+Vcc
R
G R
S
V
i

C
1

V
O

C
2

+Vcc
R
D
R
G R
S
C
G

V
CC

V
DC

R
D

Hnh 5.7. Mch kho st c tuyn ca JFET.
Chng 5: Transistor hiu ng trng
91
a. c tuyn truyn dn I
D
(V
GS
) ng vi V
DS
= const.
Gi V
DS
= const, thay i V
GS
bng
cch thay i ngun V
DC
, kho st s
bin thin ca dng thot I
D
theo V
GS
. Ta
c:
2
PO
GS
DSS D
V
V
1 I I
|
|
.
|

\
|
= (5.1)
- Khi V
GS
= 0V, dng in I
D
ln
nht v t gi tr bo ha, k hiu: I
DSS
.
- Khi V
GS
m th dng I
D
gim, V
GS

cng m th dng I
D
cng gim. Khi V
GS
= V
PO
th dng I
D
= 0. V
PO
lc ny c gi l
in th tht knh (nghn knh).
b. c tuyn ng ra I
D
(V
DS
) ng vi V
GS
= const.
Gi nguyn V
GS
mt tr s khng i (nht nh). Thay i V
CC
v kho st s bin
thin ca dng thot I
D
theo V
DS
.
- Gi s chnh ngun V
DC
v 0v,
khng thay i ngun V
DC
, ta c V
GS
=
0V = const. Thay i ngun V
CC
V
DS

thay i I
D
thay i. o dng I
D
v
V
DS
. Ta thy lc u I
D
tng nhanh theo
V
DS
, sau I
D
t gi tr bo ha, I
D
khng tng mc d V
DS
c tng.
- Chnh ngun V
DC
c V
GS
= 1v.
Khng thay i ngun V
DC
, ta c V
GS
=
1V = const. Thay i ngun V
CC
V
DS

thay i I
D
thay i. o dng I
D
v
V
DS
tng ng. Ta thy lc u I
D
tng
nhanh theo V
DS
, sau I
D
t gi tr bo ha, I
D
khng tng mc d V
DS
c tng.
- Lp li tng t nh trn ta v c h c tuyn ng ra I
D
(V
DS
) ng vi V
GS
=
const.
5.1.5. Phn cc
Tng t cch tnh ton, xc nh cng thc tnh in th, dng in ca mch phn
cc BJT. Nhng c bit mch phn cc hnh 5.10, hnh 5.11 l mch phn cc JFET
dng t ng. Chn in tr R
G
ln c 1M tr ln, ta c I
G
= 0, V
G
= 0.
V
GS
= V
G
V
S
hay V
S
= -V
GS
(5.2)
V
S
= I
S
R
S
= I
D
R
S
(5.3)
V
D
= V
CC
- I
D
R
D
(5.4)
im phn cc ca JFET cn xc nh cc i lng V
GS
, I
D
, V
DS
hay Q(V
DS
; I
D
).
im phn cc Q(V
DS
; I
D
) c th dch chuyn trn ng ti tnh.
I
D

I
DSS

0
V
GS


-V
P0

Hnh 5.8. c tuyn truyn dn ca JFET.
V
GS
= 0 V
V
DS
(V)
I
D
(mA)
0

V
PO

I
DSS

V
GS
= -1 V
V
GS
= -2 V
V
GS
= -3 V
V
GS
= -4 V
Hnh 5.9. H c tuyn ng ra ca JFET.
Chng 5: Transistor hiu ng trng
92












Ta im phn cc Q:
Q

DS
D
GS
V
I
V
hay Q(V
DS
; I
D
) (5.5)
Phng trnh ng ti tnh:

S D
CC
S D
DS
D
R R
V
R R
V
I
+
+
+

= (5.6)
- V ng ti tnh:
Cho V
DS
= 0
|
|
.
|

\
|
+

+
=
S D
CC
S D
CC
D
R R
V
0; A
R R
V
I
I
D
= 0 V
DS
= V
CC
B (V
CC
; 0)
ng ti tnh l ng thng ni gia hai im A, B v i qua im Q.
in th ti cc cc ca JFET:
V
G
= 0 (5.7a)

V
S
= I
S
R
S
= I
D
R
S
(5.7b)
V
D
= V
CC
- I
D
R
D
(5.7c)
V d: Cho mch nh hnh 5.10.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2 kO
+Vcc
R
D
R
G R
S
Hnh 5.10

R
D
-Vcc

RG
R
S
Hnh 5.11
Chng 5: Transistor hiu ng trng
93
Mch ny c: V
G
= 0
V
S
= -V
GS
= -(-2) = 2 V = I
D
R
S

2
1k
2
R
2
I
S
D
= = = (mA)
V
D
= V
CC
- I
D
R
D
= 12 2.2 k = 8 (V)
V
DS
= V
D
V
S
= 8 2 = 6 (V)
Vy to im phn cc:
Q

=
=
=
V 6 V
mA 2 I
V 2 V
DS
D
GS
hay Q(6 V; 2 mA)
Phng trnh ng ti tnh c dng:
(mA) 4 0,33V I
1k 2k
12
1k 2k
V
R R
V
R R
V
I
DS D
DS
S D
CC
S D
DS
D
+ =
+
+
+

=
+
+
+

=

Hay I
D
= - 0,33.10
-3
V
DS
+ 4.10
-3
(A)
in th ti cc cc ca JFET:
V
G
= 0

V
S
= 2 V
V
D
= 8 V
5.2. MOSFET (Metal Oxide Semiconductor FET)
MOSFET hay cn c gi IGFET (Insulated Gate FET) l FET c cc cng cch li.
MOSFET chia lm hai loi: MOSFET knh lin tc (MOSFET loi him) v MOSFET
knh gin on (MOSFET loi tng). Mi loi c phn bit theo cht bn dn: knh N
hoc knh P.
5.2.1.MOSFET knh lin tc
a. Cu to k hiu






Hnh 5.12. Cu to k hiu MOSFET knh lin tc loi N.
+ +
S
N
Al
SiO2
N
D
G
D
Sub
G
S
N
P
Chng 5: Transistor hiu ng trng
94







Hnh 5.13. Cu to k hiu MOSFET knh lin tc loi P.
Gate (G): cc ca (cc cng)
Drain (D): cc thot (cc mng)
Source (S): cc ngun
Substrate (Sub): (nn)
Cu to MOSFET knh lin tc loi N
Trn nn cht bn dn loi P, ngi ta pha hai vng bn dn loi N vi nng cao
(N
+
) c ni lin vi nhau bng mt vng bn dn loi N pha nng thp (N). Trn
ph mt lp mng SiO
2
l cht cch in.
Hai vng bn dn N
+
tip xc kim loi (Al) a ra cc thot (D) v cc ngun (S).
Cc G c tip xc kim loi bn ngoi lp oxit nhng vn cch in vi knh N c
ngha l tng tr vo cc l ln.
phn bit knh (thng l) N hay P nh sn xut cho thm chn th t gi l chn
Sub, chn ny hp vi thng l to thnh mi ni P-N. Thc t, chn Sub ca MOSFET
c nh sn xut ni vi cc S bn trong MOSFET.
b. c tuyn
V
DS
l hiu in th gia cc D v cc S.
V
GS
l hiu in th gia cc G v cc S.
Xt mch nh hnh 5.14.
Khi V
GS
= 0V: in t di chuyn to dng
in I
D
, khi tng in th V
DS
th dng I
D

tng, I
D
s tng n mt tr s gii hn l I
Dsat

(dng I
D
bo ha). in th V
DS
tr s I
Dsat

c gi l in th nghn V
P0
ging nh
JFET.

+ +
S
P
Al
SiO2
P
G
D
D
Sub
G
S
P
N
I
D
+
VCC
G

D
R
D
+
V
DC

S
Hnh 5.14. Mch kho st c tuyn ca MOSFET knh lin tc loi N.
Chng 5: Transistor hiu ng trng
95
Khi V
GS
< 0: cc G c in th m nn y in t knh N vo vng P lm thu hp
tit din knh dn in N v dng I
D
s gim xung do in tr knh dn in tng.
Khi in th cc G cng m th dng I
D
cng nh, v n mt tr s gii hn dng
in I
D
gn nh khng cn. in th ny cc G gi l in th nghn V
P0
. c tuyn
chuyn ny tng t c tuyn chuyn ca JFET knh N.
Khi V
GS
> 0, cc G c in th dng th in t thiu s vng nn P b ht vo
knh N nn lm tng tit din knh, in tr knh b gim xung v dng I
D
tng cao hn
tr s bo ha I
Dsat
. Trng hp ny I
D
ln d lm h MOSFET nn t c dng.
Tng t JFET, ta kho st hai dng c tuyn ca MOSFET knh lin tc:
- c tuyn truyn dn I
D
(V
GS
) ng vi
V
DS
= const.
- c tuyn ng ra I
D
(V
DS
) ng vi
V
GS
= const.
Cch kho st tng t nh kho st JFET
nhng n khi cn V
GS
> 0, ta i cc ca ngun
V
DC
nhng lu ch cn ngun dng nh th I
D

tng cao. Ta c hai dng c tuyn nh hnh 5.15
v hnh 5.16:
Hnh 5.15. c tuyn truyn dn I
D
(V
GS
) ca MOSFET knh lin tc loi N.








Hnh 5.16. H c tuyn ng ra I
D
(V
DS
) ca MOSFET knh lin tc loi N.
c. Phn cc
MOSFET knh lin tc loi N thng s dng trng hp V
GS
< 0, MOSFET knh
lin tc loi P thng s dng trng hp V
GS
> 0 nn cch phn cc tng t nh
phn cc JFET.
Cch tnh cc tr s V
D
, V
S
, V
GS
, V
DS
v dng I
D
, xc nh ng ti tnh tng t
nh mch JFET.
I
D
(mA)
I
Dsat

0
V
GS
(V)

-V
P0


V
GS
= 2 V
V
DS
(V)
I
D
(mA)
0

V
PO

I
DSS

V
GS
= 1 V
V
GS
= 0 V
V
GS
= -1 V
V
GS
= -2 V
Chng 5: Transistor hiu ng trng
96
5.2.2. MOSFET knh gin on
a. Cu to k hiu:







Hnh 5.17. Cu to - k hiu MOSFET knh gin on loi N.







Hnh 5.18. Cu to- k hiu MOSFET knh gin on loi P.
Cc ca: Gate (G)
Cc thot: Drain (D)
Cc ngun: Source (S)
Nn ( ): Substrate (Sub)
Cu to MOSFET knh gin on loi N tng t nh cu to MOSFET knh lin
tc loi N nhng khng c sn knh N. C ngha l hai vng bn dn loi N pha nng
cao (N
+
) khng dnh lin nhau nn cn gi l MOSFET knh gin on. Mt trn knh
dn in cng c ph mt lp oxit cch in SiO
2
. Hai dy dn xuyn qua lp cch
in ni vo vng bn dn N
+
gi l cc S v D. Cc G c ly ra t kim loi tip xc
bn ngoi lp oxit SiO
2
nhng cch in vi bn trong. Cc Sub c ni vi cc S
bn trong MOSFET.
b. c tuyn
Xt mch nh hnh 5.19.

+ +
Al
P
S
SiO2
Sub
G
D
G
N
D
P
S
+
+
P
N
G D
S
N
Al
Sub
SiO2
S
G
D
Chng 5: Transistor hiu ng trng
97








V
DS
l hiu in th gia cc D v cc S.
V
GS
l hiu in th gia cc G v cc S.
Khi V
GS
= 0V, in t khng di chuyn c nn I
D
= 0, in tr gia D v S rt ln.
Khi V
GS
> 0V th in tch dng cc G s ht in t ca nn P v pha gia hai
vng bn dn N
+
v khi lc ht ln th s in t b ht nhiu hn, ni lin hai
vng bn dn N
+
v knh N ni lin hai vng bn dn N
+
hnh thnh nn c dng I
D

chy t D sang S. in th cc G cng tng th I
D
cng ln.
in th ngng V l in th V
GS
ln hnh thnh knh, thng thng V vi
volt.
Tng t JFET v MOSFET knh lin tc ta kho st hai dng c tuyn ca
MOSFET knh gin on:
- c tuyn truyn dn I
D
(V
GS
) ng vi V
DS
= const.
- c tuyn ng ra I
D
(V
DS
) ng vi V
GS
= const.
Cch kho st tng t nh kho st JFET v MOSFET knh lin tc nhng khc vi
hai trng hp trn l cn V
GS
> 0, c th ngun V
DC
phi dng V
GS
bng in
th ngng V th I
D
c gi tr khc 0. Ta c hai dng c tuyn nh hnh 5.20 v hnh
5.21:







Hnh 5.20. c tuyn truyn dn I
D
(V
GS
) ca MOSFET knh gin on loi N.
I
D
(mA)
V
GS
(V)
V
0

+
V
DC
I
D
R
D
+
V
CC
Hnh 5.19. Mch kho st c tuyn ca MOSFET knh gin on loi N.
Chng 5: Transistor hiu ng trng
98








Hnh 5.21. H c tuyn ng ra I
D
(V
DS
) ca MOSFET knh gin on loi N.
b. Phn cc








Hnh 5.22. Mch phn cc MOSFET knh gin on loi N.
i vi MOSFET, cc G cch in vi knh v nn P nn khng c dng I
G
i t cc
G vo MOSFET.
V
D
= V
CC
- I
D
R
D
(5.8)
V
S
= I
D
.R
S
(5.9)
CC
G2 G1
G1
G
V
R R
R
V
+
= (5.10)
V
DS
= V
CC
- I
D
(R
D
+ R
S
) (5.11)
V
GS
= V
G
-V
S
(5.12)
im phn cc ca MOSFET cn xc nh cc i lng V
GS
, I
D
, V
DS
hay Q(V
DS
;
I
D
).
im phn cc Q(V
DS
; I
D
) c th dch chuyn trn ng ti tnh.
Ta im phn cc Q:

V
GS
= 5 V
V
DS
(V)
I
D
(mA)
0

V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
V
GS
= 1 V
Chng 5: Transistor hiu ng trng
99
Q

DS
D
GS
V
I
V
hay Q(V
DS
; I
D
) (5.13)
Phng trnh ng ti tnh:

S D
CC
S D
DS
D
R R
V
R R
V
I
+
+
+

= (5.14)
- V ng ti tnh:
Cho V
DS
= 0
|
|
.
|

\
|
+

+
=
S D
CC
S D
CC
D
R R
V
0; A
R R
V
I
I
D
= 0 V
DS
= V
CC
B (V
CC
; 0)
ng ti tnh l ng thng ni gia hai im A, B v i qua im Q.
in th ti cc cc ca MOSFET knh gin an:

CC
G2 G1
G1
G
V
R R
R
V
+
= (5.15a)

V
S
= I
S
R
S
= I
D
R
S
(5.15b)
V
D
= V
CC
- I
D
R
D
(5.15c)
5.2.3. Cc cch mc c bn ca MOSFET
Tng t JFET, MOSFET cng c ba kiu mc c bn:
- Cc ngun chung (Common Source CS)
CS: Tn hiu vo G so vi S, tn hiu ra D so vi S.
- Cc cng chung (Common Gate CG)
CB: Tn hiu vo S so vi G, tn hiu ra D so vi G.
- Cc thot chung (Common Drain CD)
CC: Tn hiu vo G so vi D , tn hiu ra S so vi D.
5.3. M hnh tng ng ca FET i vi tn hiu nh - tn s thp
M hnh tng ng ca FET i vi tn hiu xoay chiu bin nh, tn s thp
nh hnh 5.23 dng dng ngun dng, hnh 5.24 dng dng ngun p. i vi tn hiu c
tn s cao ta phi xt nh hng ca cc t lin cc c
gs
, c
ds
, c
gd
.





Hnh 5.23. M hnh tng ng ca FET dng ngun dng .
v
ds
v
gs
G
i
d
S
g
m
v
gs
r
d
D
Chng 5: Transistor hiu ng trng
100







Hnh 5.24. M hnh tng ng ca FET dng ngun p.
Vi:
v
ds
l hiu in th gia cc D v cc S.
v
gs
l hiu in th gia cc G v cc S.
g
m
: h dn ( xuyn dn).

const V
GS
D
m
DS
V
I
g
=
c
c
= (5.16)
r
d
: in tr knh dn (in tr vi phn ng ra).

const V
D
DS
d
GS
I
V
r
=
c
c
= (5.17)
r
i
: in tr vo (in tr vi phn ng vo), r
i
rt ln coi nh h gia G v S.

const V
D
GS
i
DS
I
V
r
=
c
c
= (5.18)
: h s khuch i p. H s ny so snh mc nh hng ca in p V
GS

v V
DS
i vi dng thot.

const I
GS
DS
D
V
V

=
c
c
= (5.19)
v g
m
lin h vi nhau bi biu thc:
= g
m
r
d
(5.20)
5.4. ng dng
Nh trnh by trn, FET c hai loi JFET v MOSFET u hot ng da trn
s iu khin dn in ca mu bn dn bi mt in trng ngoi, ch dng mt loi
ht dn (ht ti a s), n thuc loi n cc tnh (unipolar), khng c qu trnh pht sinh
v ti hp ca hai loi ht dn nn cc tham s ca FET t b nh hng bi nhit .
Nhng u im ni bt ca FET: tng tr vo ln, h s khuch i cao, tiu th nng
lng b, kch thc cc in cc D, G, S c th gim xung rt b, thu nh th tch ca
FET mt cch ng k v n c ng dng nhiu trong ch to IC m c bit l loi IC
c mt tch hp cao. Cng nh BJT, FET c ng dng nhiu trong c hai dng
v
ds
G
S
v
gs
i
d
v
gs
r
d
D
Chng 5: Transistor hiu ng trng
101
mch s v tng t. N lm mt phn t trong nhiu dng mch khuch i, lm
chuyn mch in t.Ngoi ra, h FET cn c cc dng sau: CMOS, V-MOS, D-
MOS, FeFET,y l nhng dng c ci tin t MOSFET c thm u im trong
ng dng.







Hnh 5.25. Hnh dng ca mt s loi FET.



















S G D
S
D
G
G S
D
S
D
G
G

D
S
Chng 5: Transistor hiu ng trng
102
CU HI V BI TP

1. FET l g? C my loi? K tn v v k hiu tng ng ca FET.
2. iu kin FET dn in l g? Nu nguyn l hat ng ca FET.
3. FET c my cch mc c bn? Nu cch nhn dng kiu mc ca FET.
4. Nu cch kho st c tuyn ca FET, v dng c tuyn ca FET.
5. V mch phn cc JFET dng t ng? ng vi mi mch hy thit lp cng thc
xc nh ta im phn cc Q, in th ti cc cc ca FET. ng ti tnh l g?
Vit phng trnh ng ti tnh. V ng ti tnh. Xc nh im Q trn ng ti
tnh.
6. V mch phn cc MOSFET knh gin on dng dng cu phn th? ng vi
mi mch hy thit lp cng thc xc nh ta im phn cc Q, in th ti cc cc
ca MOSFET knh gin on. ng ti tnh l g? Vit phng trnh ng ti tnh. V
ng ti tnh. Xc nh im Q trn ng ti tnh.
7. V m hnh tng ng ca FET i vi tn hiu xoay chiu bin nh, tn s
thp. Nu ngha ca cc tham s trong m hnh tng ng.
8. Cho mch nh hnh 5.10.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2,5 kO
a. Xc nh ta im phn cc Q.
b. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
c. Cho bit in th ti cc cc ca JFET.
9. Cho mch nh hnh 5.22.
Vi V
CC
= 12 V
R
G1
= 5 kO
R
G2
= 10 kO
R
S
= 0 O
R
D
= 1,5 kO
I
D
= 4 mA
a. Xc nh ta im phn cc Q.
b. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
c. Cho bit in th ti cc cc ca MOSFET.
Chng 5: Transistor hiu ng trng
103
10. Cho mch phn cc JFET knh N dng t ng.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2,5 kO
a. Hy v dng mch.
b. Xc nh ta im phn cc Q.
c. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
d. Cho bit in th ti cc cc ca JFET.