N-CHANNEL 100V - 0.

055 - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

TYPE IRF540
s s s s s

IRF540

VDSS 100 V

RDS(on) <0.077

ID 22 A

TYPICAL RDS(on) = 0.055 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
TO-220

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DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

Ordering Information
SALES TYPE

MARKING IRF540& TO-220

PACKAGE TUBE

PACKAGING

IRF540

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 20 22 15 88 85 0.57 9 220 -55 to 175
1) ISD 22A, di/dt 300A/s, VDD V (BR)DSS, T j T JMAX (2) Starting T j = 25 oC, ID = 12A, VDD = 30V

Unit V V V A A A W W/C V/ns mJ C

() Pulse width limited by safe operating area.

February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

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IRF540
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.76 62.5 300 C/W C/W C

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF

Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 100 1 10 100 Typ. Max. Unit V A A nA

IGSS

ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 11 A Min. 2 Typ. 3 0.055 Max. 4 0.077 Unit V

DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =25 V ID = 11 A Min. Typ. 20 870 125 52 Max. Unit S pF pF pF

VDS = 25V, f = 1 MHz, VGS = 0

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IRF540
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 12 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 80 V ID= 22 A VGS= 10V Min. Typ. 60 45 30 6 10 41 Max. Unit ns ns nC nC nC

SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 12 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 50 20 Max. Unit ns ns

SOURCE DRAIN DIODE

Symbol ISD ISDM () VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A VGS = 0 100 375 7.5 Test Conditions Min. Typ. Max. 22 88 1.3 Unit A A V ns nC A

di/dt = 100A/s ISD = 22 A VDD = 30 V Tj = 150C (see test circuit, Figure 5)

(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

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IRF540
Output Characteristics Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

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IRF540
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized Breakdown Voltage vs Temperature

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IRF540
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

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IRF540 TO-220 MECHANICAL DATA

DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409

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