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rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved
25A
Description
The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers.
P100
25 85 357 375 637 580 6365 400 to 1200 2500 - 40 to 125
Units
A C A A A 2s A 2s A2s V V C
@ 50Hz @ 60Hz
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P100 Series
Bulletin I27125 rev. A 04/99
IRRM max.
@ TJ max.
mA
10
P101, P121, P131 P102, P122, P132 P103, P123, P133 P104, P124, P134 P105, P125, P135
On-state Conduction
Parameter
ID I TSM I FSM Maximum DC output current Max. peak one-cycle non-repetitive on-state or forward current
P100
25 357 375 300 315
Units Conditions
A @ TC = 85C, full bridge t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms A s
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I t
I2t
6365
A2s
V T(TO) Max. value of threshold voltage r t1 Max. level value of on-state slope resistance V TM V FM di/dt Max. peak on-state or forward voltage drop Maximum non repetitive rate of rise of turned on current IH IL Maximum holding current Maximum latching current
0.82 12
V m
1.35
TJ = 25C, ITM = x I T(AV) TJ = 125C from 0.67 VDRM ITM = x IT(AV), I g = 500mA, tr < 0.5s, tp > 6s TJ = 25C anode supply = 6V, resistive load, gate open TJ = 25C anode supply = 6V, resistive load
A/s mA mA
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P100 Series
Bulletin I27125 rev. A 04/99
Blocking
Parameter
dv/dt Maximum critical rate of rise of 200 off-state voltage IRRM IDRM IRRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM Max peak reverse leakage current 10 100 mA A TJ = 125C, gate open circuit TJ = 25C 50Hz, circuit to base, all terminal shorted, RMS isolation voltage 2500 V TJ = 25C, t = 1s V/s TJ = 125C, exponential to 0.67 VDRM gate open
P100
Units Conditions
Triggering
Parameter
PGM IGM - VGM Maximum peak gate power
P100
8 2 2 10 3 2 1
Units Conditions
W A
PG(AV) Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage VGT Maximum gate voltage required to trigger
IGD
90 60 35 mA
T J = 25C T J = 125C
VGD
Maximum gate voltage that will not trigger 0.2 V TJ = 125C, rated VDRM applied
IGD
Maximum gate current that will not trigger 2 mA TJ = 125C, rated VDRM applied
P100
-40 to 125
Units
C
Conditions
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, base to heatsink
0.10
K/W
Nm
wt
Approximate weight
58 (2.0)
g (oz)
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P100 Series
Bulletin I27125 rev. A 04/99
Circuit "2"
Circuit "3"
G1
G1
G2
G3 AC1 AC2
G1
AC1 AC2
AC2
AC1
G2
G4
G2
(-)
(+)
(-)
(+)
(-)
(+)
Single Phase Hybrid Bridge CommonCathode Basic series With voltage suppression With free-wheeling diode With both voltage suppression and free-wheeling diode P10. P10.K P10.W
P10.KW
* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W
Outline Table
4.6 (0.18)
1.65 (0.06)
4.6 (0.18)
15.5 (0.61)
45 (1.77)
23.2 (0.91)
25 (0.98) MAX.
MAX.
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P100 Series
Bulletin I27125 rev. A 04/99
60 Maximum Total Power Loss (W)
R
50
2
K/ W
SA th
= 5 1. K/
40
3K /W
W ta el -D
30 20 10 0
0 5
180 (Sine)
5 K/ W
7 K/ W
1 0 K/ W
25 0
25
50
75
100
125
15
10
10
10
15
100
80 70 0
10
15
20
25
30
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P100 Series
Bulletin I27125 rev. A 04/99
Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)
350
400 350 300 250 200 150 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated V RRM Reapplied
300
250
200
100 0.01
thJC
0.1
0.01 0.0001
0.001
0.01
0.1
10
= 100 W, tp = 500 s = 50 W, tp = 1 ms = 20 W, tp = 25 ms = 10 W, tp = 5 ms
10 (b)
TJ = -40 C
TJ = 25 C
TJ = 125 C
(4)
(3)
(2)
(1)
VGD IGD
0.1 0.001 0.01
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P100 Series
Bulletin I27125 rev. A 04/99
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