An503 1

MICRONAS
HAL501...506, 508, 509, HAL516...519, 523 Hall Effect Sensor Family
Edition Feb. 14, 2001 6251-109-4E 6251-485-2DS
MICRONAS
HAL5xx
Contents Page 3 3 3 4 4 4 4 4 5 6 6 6 6 7 7 8 9 14 14 16 18 20 22 24 26 28 30 32 34 36 38 40 40 40 40 40 44 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 4.8. 4.9. 4.10. 4.11. 4.12. 4.13. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Descriptions HAL501 HAL502 HAL503 HAL504 HAL505 HAL506 HAL508 HAL509 HAL516 HAL517 HAL518 HAL519 HAL523 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC Data Sheet History
Micronas
HAL5xx
Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL5xx family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from 40 C up to 150 C. All sensors are available in a SMD-package (SOT-89B) and in a leaded version (TO-92UA). 1.1. Features: switching offset compensation at typically 62 kHz operates from 3.8 V to 24 V supply voltage overvoltage protection at all pins reverse-voltage protection at VDD-pin magnetic characteristics are robust against mechanical stress effects short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic magnetic fields up to 10 kHz constant switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics ideal sensor for applications in extreme automotive and industrial environments EMC corresponding to DIN 40839 Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. 523 Type 501 502 503 504 505 506 508 509 516 517 518 519 Switching Behavior bipolar latching latching unipolar latching unipolar unipolar unipolar unipolar with inverted output unipolar with inverted output unipolar with inverted output unipolar with inverted output (north polarity) unipolar Sensitivity very high high medium medium low high medium low high medium medium high see Page 14 16 18 20 22 24 26 28 30 32 34 36 1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching.
low
38
Micronas
HAL5xx
Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range.
Type A HAL501 HAL502 HAL503 HAL504 HAL505 HAL506 HAL508 HAL509 HAL516 HAL517 HAL518 HAL519 HAL523 501A 502A 503A 504A 505A 506A 508A 509A 516A 517A 518A 519A 523A Temperature Range K 501K 502K 503K 504K 505K 506K 508K 509K 516K 517K 518K 519K 523K E 501E 502E 503E 504E 505E 506E 508E 509E 516E 517E 518E 519E 523E
3
for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. Operating Junction Temperature Range A: TJ = 40 C to +170 C K: TJ = 40 C to +140 C E: TJ = 40 C to +100 C The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in section 5.1. on page 40. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 5xx Example: HAL505UA-E Type: 505 Package: TO-92UA Temperature Range: TJ = 40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: Ordering Codes for Hall Sensors. 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
VDD 1 OUT
1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used
2 GND
Fig. 11: Pin configuration
Micronas
HAL5xx
2. Functional Description The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the switching offset compensation technique. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to 15 V. No external reverse protection diode is needed at the VDD-Pin for reverse voltages ranging from 0 V to 15 V.
VDD 1 Reverse Voltage & Overvoltage Protection
HAL5xx HAL5xx
Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection
Hall Plate Switch
Comparator Output
OUT 3
Clock GND 2
Fig. 21: HAL5xx block diagram
fosc
t B BON t VOUT VOH VOL t IDD
1/fosc = 16 s
tf
Fig. 22: Timing diagram
Micronas
HAL5xx
3. Specifications 3.1. Outline Dimensions
4.55 0.15 0.3 1.7 2 y sensitive area 0.2 1.5 0.3 y 3.05 0.1 4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 0.42 2 3 0.55 1.15 0.4 0.36 1 2 3 0.75 0.2 14.0 min. 2.55 top view 0.48 3.1 0.2 4.06 0.1 sensitive area 0.4
1.27 1.27 branded side 2.54
0.06 0.04
SPGS0022-5-A3/2E
branded side
Fig. 31: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm
45
SPGS7002-9-A/2E
0.8
Fig. 32: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x y center of the package 0.95 mm nominal TO-92UA center of the package 1.0 mm nominal
Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. An improvement of the TO-92UA package with reduced tolerances will be introduced end of 2001.
Micronas
HAL5xx
3.4. Absolute Maximum Ratings Symbol VDD VP IDD IDDZ VO IO IOmax IOZ TS TJ
1) 2) 3) 4) 5)
Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range5) Junction Temperature Range
Pin No. 1 1 1 1 3 3 3 3
Min. 15 242) 2003) 0.3 2003) 65 40 40
Max. 281) 501) 2003) 281) 501) 2503) 2003) 150 150 1704)
Unit V V mA mA V mA mA mA C C
as long as TJmax is not exceeded with a 220 series resistance at pin 1 corresponding to the test circuit on page 40 t < 2 ms t < 1000h Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V
Micronas
HAL5xx
3.6. Electrical Characteristics at TJ = 40 C to +170 C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V
Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc fosc ten(O) tr tf RthJSB case SOT-89B RthJA case TO-92UA
1)
Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output
Pin No. 1 1
Min. 2.3 1.6
Typ. 3 3
Max. 4.2 5.2
Unit mA mA
Conditions TJ = 25 C
28.5
32
IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 20 mA, TJ = 25 C IOL = 20 mA Output switched off, TJ = 25 C, VOH = 3.8 to 24 V Output switched off, TJ 150 C, VOH = 3.8 to 24 V TJ = 25 C, VDD = 4.5 V to 24 V
28
32
Output Voltage Output Voltage over Temperature Range Output Leakage Current
3 3
130 130
280 400
mV mV A A
0.06
0.1
Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time
10
49
62
kHz
38
62
kHz s VDD = 12 V 1) VDD = 12 V, RL = 820 Ohm, CL = 20 pF VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 33
30
70
75
400
ns
Output Fall Time
50
400
ns
Thermal Resistance Junction to Substrate Backside
150
200
K/W
Thermal Resistance Junction to Soldering Point
150
200
K/W
B > BON + 2 mT or B < BOFF 2 mT for HAL 50x,
B > BOFF + 2 mT or B < BON 2 mT for HAL 51x
5.0
2.0
2.0
1.0
Fig. 33: Recommended pad size SOT-89B Dimensions in mm
Micronas
HAL5xx
3.7. Magnetic Characteristics Overview at TJ = 40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching type HAL 501 bipolar Parameter TJ 40 C 25 C 170 C HAL 502 latching 40 C 25 C 170 C HAL 503 latching 40 C 25 C 170 C HAL 504 unipolar 40 C 25 C 170 C HAL 505 latching 40 C 25 C 170 C HAL 506 unipolar 40 C 25 C 170 C HAL 508 unipolar 40 C 25 C 170 C HAL 509 unipolar 40 C 25 C 170 C HAL 516 unipolar inverted HAL 517 unipolar inverted HAL 518 unipolar inverted 40 C 25 C 170 C 40 C 25 C 170 C 40 C 25 C 170 C Min. 0.8 0.5 1.5 1 1 0.9 6.4 6 4 10.3 9.5 8.5 11.8 11 9.4 4.3 3.8 3.2 15.5 15 12.7 23.1 23.1 21.3 2.1 2 1.7 14 13.5 9 14 13.5 11 On point BON Typ. 0.6 0.5 0.7 2.8 2.6 2.3 8.6 8 6.4 13 12 10.2 15 13.5 11.7 5.9 5.5 4.6 19 18 15.3 27.4 26.8 25.4 3.8 3.5 3 17.1 16.2 12.3 16.7 16 13.6 Max. 2.5 2.3 3 5 4.5 4.3 10.8 10 8.9 15.7 14.5 13.7 18.3 17 16.1 7.7 7.2 6.8 21.9 20.7 20 31.1 30.4 28.9 5.4 5 5.2 21.5 19 18 20 19 18.3 Min. 2.5 2.3 2.5 5 4.5 4.3 10.8 10 8.9 5.3 5 4.2 18.3 17 16.1 2.1 2 1.7 14 13.5 11.4 19.9 19.9 18.3 4.3 3.8 3.2 15.5 15 10.5 15.5 15 12.2 Off point BOFF Typ. 0.8 0.7 0.2 2.8 2.6 2.3 8.6 8 6 7.5 7 5.9 15 13.5 11.7 3.8 3.5 3 16.7 16 13.6 23.8 23.2 22.1 5.9 5.5 4.6 19.6 18.3 13.7 19 18 15.3 Max. 0.8 0.5 2 1 1 0.9 6.4 6 4 9.6 9 8.5 11.8 11 9.4 5.4 5 5.2 20 19 18.3 27.2 26.6 25.3 7.7 7.2 6.8 22.5 20.7 20 22 20.7 20 Hysteresis BHYS Min. 0.5 0.5 0.4 4.5 4.5 3.5 14.6 13.6 11 4.4 4 3.2 26 24 20 1.6 1.5 0.9 1.6 1.5 1 2.9 2.8 2.5 1.6 1.5 0.9 1.6 1.5 0.8 1.5 1.4 0.8 Typ. 1.4 1.2 0.9 5.6 5.2 4.6 17.2 16 12.4 5.5 5 4.3 30 27 23.4 2.1 2 1.6 2.3 2 1.7 3.6 3.5 3.3 2.1 2 1.6 2.5 2.1 1.4 2.3 2 1.7 Max. 2 1.9 1.8 7.2 7 6.8 20.6 18 16 6.5 6.5 6.4 34 32 31.3 2.8 2.7 2.6 2.8 2.7 2.6 3.9 3.9 3.8 2.8 2.7 2.6 3 2.7 2.4 3 2.8 2.6 mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 14 and following.
Micronas
HAL5xx
Magnetic Characteristics Overview, continued
Sensor Switching type HAL 519 unipolar inverted HAL 523 unipolar Parameter TJ 40 C 25 C 170 C 40 C 25 C 170 C Min. 5.4 5 5.2 28 28 28 On point BON Typ. 3.8 3.6 3.0 34.5 34.5 34.5 Max. 2.1 2 1.5 42 42 42 Min. 7.7 7.2 6.8 18 18 18 Off point BOFF Typ. 5.9 5.5 4.6 24 24 24 Max. 4.3 3.8 2.8 30 30 30 Hysteresis BHYS Min. 1.6 1.5 0.9 7 7 7 Typ. 2.1 1.9 1.6 10.5 10.5 10.5 Max. 2.8 2.7 2.6 14 14 14 mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 14 and following.
mA 25 20 IDD 15 10 5 0 5 TA = 40 C TA = 25 C TA=170 C
HAL 5xx
mA 5.0 4.5 IDD 4.0 3.5
HAL 5xx
TA = 40 C TA = 25 C
3.0 2.5 2.0 1.5 1.0 TA = 100 C TA = 170 C
10 15 1510 5 0
0.5 0
5 10 15 20 25 30 35 V VDD
6 VDD
8 V
Fig. 34: Typical supply current versus supply voltage
Fig. 35: Typical supply current versus supply voltage
10
Micronas
HAL5xx
mA 5
HAL 5xx
kHz 100 90
HAL 5xx
IDD
4 VDD = 24 V VDD = 12 V
fosc 80 70 TA = 25 C 60 TA = 40 C 50 TA = 170 C
VDD = 3.8 V
40 30
20 10
0 50
50
100
150 TA
200 C
10
15
20
25 VDD
30 V
Fig. 36: Typical supply current versus ambient temperature
Fig. 38: Typ. Internal chopper frequency versus supply voltage
kHz 100 90 fosc 80 70 60 50 40 30 20 10 0 50
HAL 5xx
kHz 100 90 fosc 80 70
HAL 5xx
VDD = 3.8 V
TA = 25 C 60 VDD = 4.5 V...24 V 50 40 30 20 10 200 C 0 TA = 40 C TA = 170 C
50
100
150 TA
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 37: Typ. internal chopper frequency versus ambient temperature
Fig. 39: Typ. internal chopper frequency versus supply voltage
Micronas
11
HAL5xx
mV 400 350 VOL 300
HAL 5xx
IO = 20 mA
mV 400
HAL 5xx
IO = 20 mA VDD = 3.8 V
VOL 300 TA = 170 C 250 200 150 100 50 0 0 50 TA = 100 C 200
VDD = 4.5 V VDD = 24 V
TA = 25 C TA = 40 C 100
10
15
20
25 VDD
30 V
50
100
150 TA
200 C
Fig. 310: Typical output low voltage versus supply voltage
Fig. 312: Typical output low voltage versus ambient temperature
mV 600
HAL 5xx
IO = 20 mA
mA 104 103
HAL 5xx
VOL
500
IOH 102 TA = 170 C 101 TA = 150 C TA = 100 C
400 100 300 TA = 170 C TA =100 C 200 TA = 25 C 100 TA = 40 C 101 102 103 104 105 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 106 15
TA = 25 C
TA = 40 C
20
25
30 VOH
35 V
Fig. 311: Typical output low voltage versus supply voltage
Fig. 313: Typical output high current versus output voltage
12
Micronas
HAL5xx
A 102
HAL 5xx
dBV 80 70
HAL 5xx
VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit 2
101 IOH 100 VOH = 24 V VDD
60 50
101 VOH = 3.8 V 102 30 103 20 104 10 0 0.01 40
max. spurious signals
105 50
50
100
150 TA
200 C
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 314: Typical output leakage current versus ambient temperature
Fig. 316: Typ. spectrum at supply voltage
dBA 30
HAL 5xx
VDD = 12 V TA = 25 C Quasi-PeakMeasurement max. spurious signals
IDD
20
10
10
20
30 0.01
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 315: Typ. spectrum of supply current
Micronas
13
HAL501
4. Type Description 4.1. HAL 501 The HAL 501 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 41). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: bipolar very high sensitivity typical BON: 0.5 mT at room temperature typical BOFF: 0.7 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 41: Definition of magnetic switching points for the HAL 501 BOFF 0 BON VOL B Applications The HAL 501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, CAM shaft sensors, and magnetic encoders.
Output Voltage VO BHYS
Magnetic Characteristics at TJ = 40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 0.8 0.5 0.9 1.2 1.5 On point BON Typ. 0.6 0.5 0.5 0.6 0.7 Max. 2.5 2.3 2.5 2.8 3 Off point BOFF Min. 2.5 2.3 2.5 2.5 2.5 Typ. 0.8 0.7 0.6 0.5 0.2 Max. 0.8 0.5 0.9 1.3 2 Hysteresis BHYS Min. 0.5 0.5 0.5 0.5 0.4 Typ. 1.4 1.2 1.1 1.1 0.9 Max. 2 1.9 1.8 1.8 1.8 1.4 Magnetic Offset BOFFSET Min. Typ. 0.1 0.1 0 0 0.2 1.4 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
14
Micronas
HAL501
mT 3
HAL 501
mT 3
HAL 501
BONmax
BON BOFF
BON BOFF
2 BOFFmax 1 BONtyp 0 BOFFtyp
BON
1 TA = 40 C 2 TA = 25 C TA = 100 C TA = 170 C 3 0 5 10 15 20
BOFF
1 VDD = 3.8 V 2 VDD = 4.5 V... 24 V BOFFmin BONmin
25 VDD
30 V
3 50
50
100
150 TA, TJ
200 C
Fig. 42: Typ. magnetic switching points versus supply voltage
Fig. 44: Magnetic switching points versus temperature
mT 3
HAL 501
Note: In the diagram Magnetic switching points versus temperature the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
BON
1 TA = 40 C 2 TA = 25 C TA = 100 C TA = 170 C 3 3 3.5 4.0 4.5 5.0
BOFF
5.5 VDD
6.0 V
Micronas
15
HAL502
4.2. HAL 502 The HAL 502 is the most sensitive latching sensor of this family (see Fig. 45). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching high sensitivity typical BON: 2.6 mT at room temperature typical BOFF: 2.6 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K BOFF 0 BON B VOL Applications The HAL 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, commutation of brushless DC motors, CAM shaft sensors, and magnetic encoders.
Fig. 45: Definition of magnetic switching points for the HAL 502
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 1 1 0.95 0.9 0.9 On point BON Typ. 2.8 2.6 2.5 2.4 2.3 Max. 5 4.5 4.4 4.3 4.3 Off point BOFF Min. 5 4.5 4.4 4.3 4.3 Typ. 2.8 2.6 2.5 2.4 2.3 Max. 1 1 0.95 0.9 0.9 Hysteresis BHYS Min. 4.5 4.5 4 3.7 3.5 Typ. 5.6 5.2 5 4.8 4.6 Max. 7.2 7 6.8 6.8 6.8 1.5 Magnetic Offset Min. Typ. 0 0 0 0 0 1.5 Max. mT mT mT mT mT Unit
16
Micronas
HAL502
mT 6
HAL 502
mT 6 BONmax 4
HAL 502
BON BOFF
4 BON 2 TA = 40 C 0 TA = 25 C TA = 100 C TA = 170 C 2 BOFF 4
BON BOFF
2 BONmin 0 VDD = 3.8 V VDD = 4.5 V... 24 V BOFFmax 2
BONtyp
BOFFtyp 4 BOFFmin 6 0 5 10 15 20 25 VDD 30 V 6 50 0 50 100 150 TA, TJ 200 C
mT 6
HAL 502
BON BOFF
4 BON 2 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 2 BOFF 4
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
17
HAL503
4.3. HAL 503 The HAL 503 is a latching sensor (see Fig. 49). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO Magnetic Features: switching type: latching medium sensitivity typical BON: 7.6 mT at room temperature typical BOFF: 7.6 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K BOFF 0 BON B VOL BHYS Applications The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifter.
Output Voltage
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 6.4 6 4.8 4.4 4 On point BON Typ. 8.4 7.6 7.1 6.7 6.4 Max. 10.8 10 9.5 9.2 8.9 Off point BOFF Min. 10.8 10 9.5 9.2 8.9 Typ. 8.6 7.6 6.9 6.4 6 Max. 6.4 6 4.8 4.4 4 Hysteresis BHYS Min. 14.6 13.6 12.3 11.5 11 Typ. 17 15.2 14 13.1 12.4 Max. 20.6 18 17 16.5 16 1.5 Magnetic Offset Min. Typ. 0.1 0 0.1 0.1 0.2 1.5 Max. mT mT mT mT mT Unit
18
Micronas
HAL503
mT 12
HAL 503
mT 12 BONmax
HAL 503
BON BOFF
BON 8
BON BOFF
8 BONtyp 4 BONmin VDD = 3.8 V VDD = 4.5 V... 24 V 4 BOFFmax BOFFtyp BOFFmin
4 TA = 40 C 0 TA = 25 C TA = 100 C TA = 170 C 4
8 BOFF 12
10
15
20
25 VDD
30 V
12 50
50
100
150 TA, TJ
200 C
mT 12
HAL 503
Note: In the diagram Magnetic switching points versus ambient temperature the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
BON 8
4 TA = 40 C 0 TA = 25 C TA = 100 C TA = 170 C 4
8 BOFF 12
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
19
HAL504
4.4. HAL 504 The HAL 504 is a unipolar switching sensor (see Fig. 413). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar medium sensitivity typical BON: 12 mT at room temperature typical BOFF: 7 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K 0 BOFF BON VOL B Applications The HAL 504 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end-point detection, and rotating speed measurement.
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 10.3 9.5 9 8.7 8.5 On point BON Typ. 13 12 11.1 10.6 10.2 Max. 15.7 14.5 14.1 13.9 13.7 Off point BOFF Min. 5.3 5 4.6 4.4 4.2 Typ. 7.5 7 6.4 6.1 5.9 Max. 9.6 9 8.7 8.6 8.5 Hysteresis BHYS Min. 4.4 4 3.6 3.4 3.2 Typ. 5.5 5 4.7 4.5 4.3 Max. 6.5 6.5 6.4 6.4 6.4 7.2 Magnetic Offset Min. Typ. 10.2 9.5 8.8 8.4 8 11.8 Max. mT mT mT mT mT Unit
20
Micronas
HAL504
mT 18 16 14
HAL 504
mT 18 16 BONmax 14 12 10 8 6 BONmin BOFFmax
HAL 504
BON BOFF
BON BOFF BON
12 10 8 6 4 2 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 0 5 10 15 20 25 VDD 30 V BOFF
BONtyp
BOFFtyp BOFFmin VDD = 3.8 V VDD = 4.5 V... 24 V
4 2 0 50
50
100
150 TA, TJ
200 C
mT 18 16 BON BOFF 14
HAL 504
BON 12 10 8 6 4 2 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V BOFF
Micronas
21
HAL505
4.5. HAL 505 The HAL 505 is a latching sensor (see Fig. 417). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO Magnetic Features: switching type: latching low sensitivity typical BON: 13.5 mT at room temperature typical BOFF: 13.5 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K BOFF 0 BON B VOL BHYS Applications The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifter.
Output Voltage
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 11.8 11 10.2 9.7 9.4 On point BON Typ. 15 13.5 12.4 12 11.7 Max. 18.3 17 16.6 16.3 16.1 Off point BOFF Min. 18.3 17 16.6 16.3 16.1 Typ. 15 13.5 12.4 12 11.7 Max. 11.8 11 10.2 9.7 9.4 Hysteresis BHYS Min. 26 24 22 21 20 Typ. 30 27 24.8 24.2 23.4 Max. 34 32 31.3 31.3 31.3 1.5 Magnetic Offset Min. Typ. 0 0 0 0 0 1.5 Max. mT mT mT mT mT Unit
22
Micronas
HAL505
mT 20 BON 15 BOFF 10 5 0 5 10 15 20
HAL 505
BON
mT 20 BONmax BON 15 BOFF 10 5 0 5 10 15 BOFFmin 20 50 BOFFmax BONmin VDD = 3.8 V
HAL 505
BONtyp
TA = 40 C TA = 25 C TA = 100 C TA = 170 C BOFF
VDD = 4.5 V... 24 V
BOFFtyp
10
15
20
25 VDD
30 V
50
100
150 TA, TJ
200 C
mT 20 15 10 5 0 5 10 15 20
HAL 505
BON
BON BOFF
TA = 40 C TA = 25 C TA = 100 C TA = 170 C BOFF
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
23
HAL506
4.6. HAL 506 The HAL 506 is the most sensitive unipolar switching sensor of this family (see Fig. 421). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 516 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: switching type: unipolar high sensitivity typical BON: 5.5 mT at room temperature typical BOFF: 3.5 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K 0 BOFF BON VOL B Applications The HAL 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 4.3 3.8 3.6 3.4 3.2 On point BON Typ. 5.9 5.5 5.1 4.8 4.6 Max. 7.7 7.2 7 6.9 6.8 Off point BOFF Min. 2.1 2 1.9 1.8 1.7 Typ. 3.8 3.5 3.3 3.1 3 Max. 5.4 5 4.9 5.1 5.2 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 2 1.8 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 3.8 Magnetic Offset Min. Typ. 4.8 4.5 4.2 4 3.8 6.2 Max. mT mT mT mT mT Unit
24
Micronas
HAL506
mT 8 7
HAL 506
mT 8 7 6 5 BOFFmax 4 3 BONmax
HAL 506
BON BOFF
BON 6 5 4 3 2 1 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C BOFF
BON BOFF
BONtyp
BONmin BOFFtyp BOFFmin VDD = 3.8 V VDD = 4.5 V... 24 V 0 50 100 150 TA, TJ 200 C
2 1 0 50
10
15
20
25 VDD
30 V
mT 8 7
HAL 506
BON BOFF
BON 6 5 4 3 BOFF 2 1 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V
Micronas
25
HAL508
4.7. HAL 508 The HAL 508 is a unipolar switching sensor (see Fig. 425). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 518 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: switching type: unipolar medium sensitivity typical BON: 18 mT at room temperature typical BOFF: 16 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K 0 BOFF BON B Fig. 425: Definition of magnetic switching points for the HAL 508 Applications The HAL 508 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Output Voltage VO BHYS VOL
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 15.5 15 13.9 13.2 12.7 On point BON Typ. 19 18 16.6 15.8 15.3 Max. 21.9 20.7 20.4 20.2 20 Off point BOFF Min. 14 13.5 12.5 11.9 11.4 Typ. 16.7 16 14.8 14.1 13.6 Max. 20 19 18.7 18.5 18.3 Hysteresis BHYS Min. 1.6 1.5 1.2 1.1 1 Typ. 2.3 2 1.8 1.7 1.7 Max. 2.8 2.7 2.6 2.6 2.6 14 Magnetic Offset Min. Typ. 17.8 17 15.7 15 14.4 20 Max. mT mT mT mT mT Unit
26
Micronas
HAL508
mT 25
HAL 508
mT 25
HAL 508
BON BOFF 20
BON
BON BOFF 20
BONmax BOFFmax
15 BOFF 10 TA = 40 C TA = 25 C 5 TA = 100 C TA = 170 C
15
BONtyp BOFFtyp BONmin BOFFmin
10
VDD = 3.8 V VDD = 4.5 V... 24 V
10
15
20
25 VDD
30 V
0 50
50
100
150 TA, TJ
200 C
mT 25
HAL 508
BON BOFF 20
BON
15 BOFF 10 TA = 40 C TA = 25 C 5 TA = 100 C TA = 170 C
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
27
HAL509
4.8. HAL 509 The HAL 509 is a unipolar switching sensor (see Fig. 429). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical BON: 26.8 mT at room temperature typical BOFF: 23.2 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 300 ppm/K 0 BOFF BON Applications The HAL 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Output Voltage VO BHYS VOL B
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 23.1 23.1 22.2 21.7 21.3 On point BON Typ. 27.4 26.8 26.1 25.7 25.4 Max. 31.1 30.4 29.7 29.2 28.9 Off point BOFF Min. 19.9 19.9 19.1 18.6 18.3 Typ. 23.8 23.2 22.7 22.4 22.1 Max. 27.2 26.6 25.9 25.6 25.3 Hysteresis BHYS Min. 2.9 2.8 2.7 2.6 2.5 Typ. 3.6 3.5 3.4 3.3 3.3 Max. 3.9 3.9 3.8 3.8 3.8 21.5 Magnetic Offset Min. Typ. 25.6 25 24.4 24 23.7 28.5 Max. mT mT mT mT mT Unit
28
Micronas
HAL509
mT 35
HAL 509
mT 35 BONmax
HAL 509
BON 30 BOFF 25
BON
BON 30 BOFF 25
BOFFmax
BONtyp BOFFtyp BONmin BOFFmin
20
BOFF
20
15 TA = 40 C TA = 25 C TA = 100 C 5 TA = 170 C
15
10
10 VDD = 3.8 V 5 VDD = 4.5 V... 24 V
10
15
20
25 VDD
30 V
0 50
50
100
150 TA, TJ
200 C
mT 35
HAL 509
BON 30 BOFF 25
BON
20
BOFF
15 TA = 40 C TA = 25 C TA = 100 C 5 TA = 170 C
10
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
29
HAL516
4.9. HAL 516 The HAL 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 433). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: switching type: unipolar inverted high sensitivity typical BON: 3.5 mT at room temperature typical BOFF: 5.5 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K 0 VOL BON BOFF B Applications The HAL 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 2.1 2 1.9 1.8 1.7 On point BON Typ. 3.8 3.5 3.3 3.1 3 Max. 5.4 5 4.9 5.1 5.2 Off point BOFF Min. 4.3 3.8 3.6 3.4 3.2 Typ. 5.9 5.5 5.1 4.8 4.6 Max. 7.7 7.2 7 6.9 6.8 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 2 1.8 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 3.8 Magnetic Offset Min. Typ. 4.8 4.5 4.2 4 3.8 6.2 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BOFF BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
30
Micronas
HAL516
mT 8 7 6
HAL 516
mT 8 7 6 BOFFmax
HAL 516
BON BOFF
BON BOFF
BOFF 5 4 BON 3 2 1 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 3 2 1 0 50 BONmin VDD = 3.8 V VDD = 4.5 V... 24 V 0 50 100 150 TA, TJ 5 BONmax 4 BOFFmin
BOFFtyp
BONtyp
10
15
20
25 VDD
30 V
200 C
mT 8 7 6 5 4 3 2 1 0 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0
HAL 516
BON BOFF
BOFF
BON
5.5 VDD
6.0 V
Micronas
31
HAL517
4.10. HAL 517 The HAL 517 is a unipolar switching sensor with inverted output (see Fig. 437). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted medium sensitivity typical on point is 16.2 mT at room temperature typical off point is 18.3 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1700 ppm/K 0 VOL BON BOFF B BHYS Applications The HAL 517 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Output Voltage VO
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 14 13.5 11 10 9 On point BON Typ. 17.1 16.2 14.3 13.2 12.3 Max. 21.5 19 18.5 18.2 18 Off point BOFF Min. 15.5 15 12.8 11.5 10.5 Typ. 19.6 18.3 16.1 14.8 13.7 Max. 22.5 20.7 20.4 20.2 20 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.8 Typ. 2.5 2.1 1.8 1.6 1.4 Max. 3 2.7 2.6 2.6 2.4 14 Magnetic Offset Min. Typ. 18.3 17.2 15.2 14 13 20 Max. mT mT mT mT mT Unit
32
Micronas
HAL517
mT 25
HAL 517
mT 25
HAL 517
BON BOFF 20
BOFF
BON BOFF 20
BOFFmax BONmax
15
15
BOFFtyp BONtyp
BON 10 TA = 40 C TA = 25 C 5 TA = 100 C TA = 170 C 5 VDD = 3.8 V VDD = 4.5 V... 24 V 10 BONmin BOFFmin
10
15
20
25 VDD
30 V
0 50
50
100
150 TA, TJ
200 C
mT 25
HAL 517
BON BOFF 20
BOFF
15 BON 10 TA = 40 C TA = 25 C 5 TA = 100 C TA = 170 C
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
33
HAL518
4.11. HAL 518 The HAL 518 is a unipolar switching sensor with inverted output (see Fig. 441). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 508 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: switching type: unipolar inverted medium sensitivity typical BON: 16 mT at room temperature typical BOFF: 18 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K 0 VOL BON BOFF B Applications The HAL 518 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 14 13.5 12.5 11.7 11 On point BON Typ. 16.7 16 14.8 14.1 13.6 Max. 20 19 18.7 18.5 18.3 Off point BOFF Min. 15.5 15 13.9 13 12.2 Typ. 19 18 16.6 15.8 15.3 Max. 22 20.7 20.4 20.2 20 Hysteresis BHYS Min. 1.5 1.4 1 0.9 0.8 Typ. 2.3 2 1.8 1.7 1.7 Max. 3 2.8 2.7 2.7 2.6 14 Magnetic Offset Min. Typ. 17.8 17 15.7 15 14.4 20 Max. mT mT mT mT mT Unit
34
Micronas
HAL518
mT 25
HAL 518
mT 25
HAL 518
BON BOFF 20
BOFF
BON BOFF 20
BOFFmax BONmax
15 BON
15
BOFFtyp BONtyp BONmin BOFFmin
10 TA = 40 C TA = 25 C 5 TA = 100 C TA = 170 C
10
VDD = 3.8 V VDD = 4.5 V... 24 V
10
15
20
25 VDD
30 V
0 50
50
100
150 TA, TJ
200 C
mT 25
HAL 518
BON BOFF 20
BOFF
15 BON 10
TA = 40 C TA = 25 C TA = 100 C TA = 170 C
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
35
HAL519
4.12. HAL 519 The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity. (see Fig. 445). The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted, north sensitive high sensitivity typical BON: 3.5 mT at room temperature typical BOFF: 5.5 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz typical temperature coefficient of magnetic switching points is 1000 ppm/K BOFF BON 0 B BHYS VOL Applications The HAL 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage VO
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 5.4 5 4.9 5.1 5.2 On point BON Typ. 3.8 3.6 3.3 3.1 3 Max. 2.1 2 1.9 1.7 1.5 Off point BOFF Min. 7.7 7.2 6.7 6.8 6.8 Typ. 5.9 5.5 5 4.8 4.6 Max. 4.3 3.8 3.4 3.1 2.8 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 1.9 1.7 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 6.2 Magnetic Offset Min. Typ. 4.8 4.5 4.2 4 3.8 3.8 Max. mT mT mT mT mT Unit
36
Micronas
HAL519
mT 0 BON 1 BOFF 2 3
HAL 519
TA = 40 C TA = 25 C TA = 100 C TA = 170 C
mT 0 BON 1 BOFF 2 3
HAL 519
VDD = 3.8 V VDD = 4.5 V...24 V BONmax
BON 4 5 BOFF 6 7 8 6 7 4 5
BONtyp BOFFmax BONmin
BOFFtyp
BOFFmin 0 5 10 15 20 25 VDD 30 V 8 50 0 50 100 150 TA, TJ 200 C
mT 0 BON 1 BOFF 2 3 4 5 6
HAL 519
TA = 40 C TA = 25 C TA = 100 C TA = 170 C BON
BOFF 7 8
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
37
HAL523
4.13. HAL 523 The HAL 523 is the least sensitive unipolar switching sensor of this family (see Fig. 449). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical BON: 34.5 mT at room temperature typical BOFF: 24 mT at room temperature operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON Applications The HAL 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement.
Output Voltage VO BHYS VOL B
Parameter TJ 40 C 25 C 100 C 140 C 170 C Min. 28 28 28 28 28 On point BON Typ. 34.5 34.5 34.5 34.5 34.5 Max. 42 42 42 42 42 Off point BOFF Min. 18 18 18 18 18 Typ. 24 24 24 24 24 Max. 30 30 30 30 30 Hysteresis BHYS Min. 7 7 7 7 7 Typ. 10.5 10.5 10.5 10.5 10.5 Max. 14 14 14 14 14 Magnetic Offset Min. Typ. 29.3 29.3 29.3 29.3 29.3 Max. mT mT mT mT mT Unit
38
Micronas
HAL523
mT 45 40 35 30 25 20 TA = 40 C 15 10 5 0 TA = 25 C TA = 100 C TA = 170 C
HAL 523
mT 45 BONmax 40 35 30 BOFFmax BONmin
HAL 523
BON BOFF
BON
BON BOFF
BONtyp
BOFF
25 20 15 10 5
BOFFtyp
BOFFmin VDD = 3.8 V VDD = 4.5 V...24 V
10
15
20
25 VDD
30 V
0 50
50
100
150 TA, TJ
200 C
mT 45 40 35 30 25 20 TA = 40 C 15 10 5 0 TA = 25 C TA = 100 C TA = 170 C
HAL 523
BON BOFF
BON
BOFF
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Micronas
39
HAL5xx
5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax T 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V has not been tested. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ... HAL519), the output state will be high if B > BOFF and low if B < BON. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 40 Micronas Fig. 51: Test circuit for EMC investigations Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 51). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839.
RV 220 1 VEMC VP 4.7 nF 2 GND VDD OUT 3 20 pF RL 1.2 k
HAL5xx
Micronas
41
HAL5xx
42
Micronas
HAL5xx
Micronas
43
HAL5xx
6. Data Sheet History 1. Final data sheet: HAL 501...506, 508, 509, 516... 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251-485-1DS. First release of the final data sheet. Major changes to the previous edition HAL501 ... HAL506, HAL 508, Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS: additional types: HAL509, HAL516 ... HAL518 additional package SOT-89B additional temperature range K outline dimensions for SOT-89A and TO-92UA changed absolute maximum ratings changed electrical characteristics changed magnetic characteristics for HAL 501, HAL 503, HAL 506, and HAL 509 changed 2. Final data sheet: HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family, Feb. 14, 2001, 6251-485-2DS. Second release of the final data sheet. Major changes: additional types: HAL519, HAL523 phased-out package SOT-89A removed temperature range C removed outline dimensions for SOT-89B: reduced tolerances
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (02/01) Order No. 6251-485-2DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
44
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MICRONAS

HAL501...506, 508, 509, HAL516...519, 523 Hall Effect Sensor Family

Edition Feb. 14, 2001 6251-109-4E 6251-485-2DS

Fig. 11: Pin configuration

Hall Plate Switch

Fig. 21: HAL5xx block diagram

t B BON t VOUT VOH VOL t IDD

Fig. 22: Timing diagram

1.27 1.27 branded side 2.54

Min. 15 242) 2003) 0.3 2003) 65 40 40

Min. 2.3 1.6

Max. 4.2 5.2

Output Fall Time

Thermal Resistance Junction to Substrate Backside

Thermal Resistance Junction to Soldering Point

B > BON + 2 mT or B < BOFF 2 mT for HAL 50x,

B > BOFF + 2 mT or B < BON 2 mT for HAL 51x

Fig. 33: Recommended pad size SOT-89B Dimensions in mm

mA 5.0 4.5 IDD 4.0 3.5

3.0 2.5 2.0 1.5 1.0 TA = 100 C TA = 170 C

Fig. 34: Typical supply current versus supply voltage

Fig. 35: Typical supply current versus supply voltage

Fig. 36: Typical supply current versus ambient temperature

Fig. 38: Typ. Internal chopper frequency versus supply voltage

kHz 100 90 fosc 80 70 60 50 40 30 20 10 0 50

kHz 100 90 fosc 80 70

TA = 25 C 60 VDD = 4.5 V...24 V 50 40 30 20 10 200 C 0 TA = 40 C TA = 170 C

Fig. 37: Typ. internal chopper frequency versus ambient temperature

Fig. 39: Typ. internal chopper frequency versus supply voltage

mV 400 350 VOL 300

VOL 300 TA = 170 C 250 200 150 100 50 0 0 50 TA = 100 C 200

VDD = 4.5 V VDD = 24 V

Fig. 310: Typical output low voltage versus supply voltage

Fig. 312: Typical output low voltage versus ambient temperature

IOH 102 TA = 170 C 101 TA = 150 C TA = 100 C

Fig. 311: Typical output low voltage versus supply voltage

Fig. 313: Typical output high current versus output voltage

101 IOH 100 VOH = 24 V VDD

101 VOH = 3.8 V 102 30 103 20 104 10 0 0.01 40

max. spurious signals

10.00 100.00 1000.00 10 100 1000 MHz f

Fig. 314: Typical output leakage current versus ambient temperature

Fig. 316: Typ. spectrum at supply voltage

10.00 100.00 1000.00 10 100 1000 MHz f

Fig. 315: Typ. spectrum of supply current

Output Voltage VO BHYS

2 BOFFmax 1 BONtyp 0 BOFFtyp

1 VDD = 3.8 V 2 VDD = 4.5 V... 24 V BOFFmin BONmin

Fig. 42: Typ. magnetic switching points versus supply voltage

Fig. 44: Magnetic switching points versus temperature

1 TA = 40 C 2 TA = 25 C TA = 100 C TA = 170 C 3 3 3.5 4.0 4.5 5.0

Fig. 43: Typ. magnetic switching points versus supply voltage

Output Voltage VO BHYS

4 BON 2 TA = 40 C 0 TA = 25 C TA = 100 C TA = 170 C 2 BOFF 4

2 BONmin 0 VDD = 3.8 V VDD = 4.5 V... 24 V BOFFmax 2

BOFFtyp 4 BOFFmin 6 0 5 10 15 20 25 VDD 30 V 6 50 0 50 100 150 TA, TJ 200 C

Fig. 46: Typ. magnetic switching points versus supply voltage

Fig. 48: Magnetic switching points versus temperature

4 BON 2 TA = 40 C TA = 25 C TA = 100 C TA = 170 C 2 BOFF 4

Fig. 47: Typ. magnetic switching points versus supply voltage

Fig. 410: Typ. magnetic switching points versus supply voltage

Fig. 412: Magnetic switching points versus temperature