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O AN mon hoc 1
GVHD
SVTH
Lp
MSSV
TP Ho Ch Minh 12/2007.
LI M AU
YU CU TI
*S liu ban u.
_ Cng sut ng ra PL: 20 W
_ Tr khng ti RL: 8
_ in p vo Vin: 0,5 Vp-p
_ Di tn fmin fmax: 300 Hz 15 KHz
_ Hiu sut: >65%
*Nhim v thit k.
_ Nghin cu l thuyt mch khuch i cng sut m tn.
_ Tnh ton thit k da trn mch mu cho km theo. Kt
qu tnh ton phi p ng c cc yu cu ban u v linh
kin phi ph hp vi linh kin chun.
_ V mch trn giy A4 v in y gi tr - tn linh kin.
_ Trnh by n trn giy A4 bng ch nh my.
PHN 1:
L THUYT
|A|
Tan so thap
Am
Am
2
Tan so gia
Tan
so cao
VO
.
VI
IO
o li dong ien (AI) : AI = .
II
PO
o li cong suat (AP) : AP = .
PI
o li ien ap (AV) : AV =
Hieu suat cua bo khuech ai cong suat c nh
ngha la t so gia cong suat tn hieu tung bnh c
phan phoi tren tai vi cong suat trung bnh c keo
t nguon DC:
(%) =
PL
.100%
PCC
HOAT
ONG
ac iem :
c cap nguon n +Vcc va mass (0V).
Tang khuech ai cong suat ay keo dung
transistor bo phu oi xng nen ien the iem
gia ra loa bang na nguon .
Ngo ra loa phai ghep vi mot tu ien Co.
2.
u iem :
Cout
Khuyet iem :
Phai chnh ien the DC cua iem gia ra loa
bang na nguon cung cap th tn hieu ngo ra mi
khong b meo .
Cap transistor cong suat neu khong phai la cap
transistor bo phu th de gay meo phi tuyen.
Tn hiu ra b mo tn s thp do t Cout gy ra (do t
khng th tin ti v cng).
2. u iem :
Cho ra cong suat ln(gap 4 lan so vi OTL hay
OCL) khi s dung vi nguon ien ap thap hoac
dung cho cac Ampli co cong suat rat ln t
500W en vai nghn Walt.
3. Khuyet iem :
Gia thanh cao.
Tn hieu ra de b meo hai mach khuech ai khong
giong nhau .De b chay neu ien the iem
gia khong bang 0.
II. CHI TIT MCH KCS LOI B & MCH OTL:
A. MACH HOAT ONG LP B:
Trong mch khuch i cng sut loi B, ngi ta phn cc
vi VB = 0V nn bnh thng Transistor khng dn in v ch dn
in khi c tn hiu ln a vo. Do phn cc nh th nn
Transistor ch dn in c 1 bn k ca tn hiu (bn k dng
hay m ty thuc vo Transistor NPN hay PNP). Do mun nhn
c c chu k ca tn hiu ngo ra ngi ta phi dng 2
Transistor, mi Transistor dn in mt na chu k ca tn
hiu. Mch ny gi l mch cng sut y ko (push-pull).
2
P
CC = VCC P
1
2
R L .I cm
4
Hieu suat:
% =
PL
100 %
PCC
* u im:
* Khuyt im:
c im:
Cp ngun n + VCC
Tng khuch i cng sut y ko dng Transistor b
ph, tng cng sut ca mch ngi ta dng cc cp
Darlington.
in th im gia bng na ngun.
Ng ra loa ghp t Co.
u im:
Tit kim do ch dng mt ngun cung cp.
Cho cht lng m thanh trung thc (Hifi) do p tuyn
tn s rng.
Khuyt im:
Phan II:
THIET KE
R
2
C
. 4
4
4
0
2
. 0
V
Q
1
6
8
5
. 6
2
2
C
1
1
. 6
V
1
Q
C
u1
. 5
. 6
. 2
F
P
Q
. 2
2
2
i n
=
=
0
1
. 4
u R
91
03
. 0
R
0
0
V
0
k
V6
. 2
S
1
V
3
R
k
C
. 9
4
5
. 1
. 1
N
6
1
0
5
1
. 2
2
C
. 8
Q
1
6 QV 2
. 1
0
4
1
8
4
Q
L
8
R
Q
. 1
6
0
V
3
6
C
. 5
u
V
D
8
. 7
.9 7 . 39
. 3
C
1
5
k
0V
5
8
9
4
2
4
. 5
R
2
F
M
E
. 0
R 5
1 0 1
5 . 1
O
A
R
V
V
F
=
bo
cng
sut
ra
loa
yu
cu
thi
17.89(V)
V
Chn
=18(V).
Q
= 40(V).
chn ngun
1
1
=27.88W
2 N
1
1
b.Tnh
PL
=
PCC
Cc in tr
c tc dng n nh nhit cho transistor
,dng qua ti cng chnh l dng qua cc in tr ny mi bn
k . khng nh hng n cng sut trn ti ta c :
PRtb=R13
=0.22
= 0.11(W)
/ 2
chn R13=R14=0.22
1 4
1
4
Q
=69%
1 3
1
V o u t
/ 2
= 40(V).
R
d c
0
Q
1 3
PRtb=R13
= 0.22
= 1.1(W)
=0.77(A)
Chn Q3 , Q4 b ph nh sau:
Tn
PCmax
VCEmax
ICmax
hfe
Q5
2SD781
80W
120V
8A
Q6
2SB688
80W
120V
8A
55(150o
C)
55(150o
C)
ICmax(Q5)
Chn IcQ5=35mA
Chn h s khuch i ca con Q5 l: Hfe(Q5)= 35
AC(Q5)
<R11=R12 < R
DC(Q5)
+ RAC(Q5) <R11=R12
+ R11=R12 < RDC(Q5)
R
AC(Q5)
=hie5+hfe5(R13+RL)=
+35
(0.22+8) =322.7
RDC(Q5)
=
VbeQ5
hfe5
IcQ5+hfe5
35mA+35*0.22=707.7
322.7<R11=R12 <707.7 ()
V R11(DC)= VbeQ5+VR13DC=0.7+0.22*35mA=0.7V
Chn dng qua in tr IR11=1.5*IBQ5=1.5*
R11=
R13=0.7*35
=1.5*
=1.5mA.
=0.7/1.5mA =466.67
= R11*
=560*1.5mA=0.84W
So vi iu kin trn ta chn R11=R12=560/1.5W
Tm Q3&Q4:
Ta
dng
IR11+IBQ5=1.5mA+
=1.5mA+1mA=2.5mA.
Chn
=20*
=20*2.5mA=50mA
=
=( *Vcc*
- *RAC*
=0.5*40*2.5mA=0.05W
Chn
=20*
=1W
*Vcc*
Chn Q3 , Q4 b ph nh sau:
Tn
Q5 2SC2
383
Q7 2SA1
013
PCmax
VCEmax ICmax
hfe
900
mW
900
mW
160V 1A
70
160V 1A
70
k
R
8
5
. 6
=0.035mA
uR
Ta c: IBQ3 =
4
1
5
5
. 1
k
R
a.Tm R10:
2
2
=
10*
=0.35mA
IBQ3
=10*0.035mA
Dng
qua
IR9=
=0.35+0.035=0.385mA
C:
VR10=
R10= VR10
=
-
+V
+V
R11
)-1.4=1.4V
=1.4V/0.35mA=4K
chn R10=5.6k
R12
IBQ3
=2.8V
u
D
3
D
p
D
Q
Chn
4
D
4
5
. 1
C
k
3
1
b.Tm R8,R9,D1,D2:
y l hai in tr phn cc cho Q3,Q4 dng gi li ln cho
mch.Ngoi ra ta thy v mt xoay chiu R8//RL
R8 RL
khng
lm
nh
hng
n
li
ca
mch.
D1,D2:dng phn cc cho mi ni BE ca
, Q3,Q4 v trnh
mo xuyn tm.
ID 10*I10 = 3.5 (mA)
PD1 = PD2 = VD1. ID1 = 0.7*3.5*10-3 = 2.45 (mW)
Vy chn 2 diode l:D1N4531.
Ta c:R8+R9=
R8 RL
=47.8K
R8 50 RL=50*8=400
R9=47.8k-0.56k=47.24k
chn R8=560.
chn R9=47k.
c.Tm C4:
ay la tu tang cng, ngan mach AC, h mach DC
tan so thap. Khi mac them C4 vao th Q3, Q4, Q5, Q6 tr
thanh mac E chung, do o Av >1.
C4 >>
= 0.1 (uF)
Chn C4 =100uF
= 0.35mA-0.035mA=0.315mA
Chn VR4=1/10*Vcc/2=40/2*0.1=2V
R4=VR4/
=2/0.315mA=6.3k
chn R4=5.1k
= 0.1 (uF)
Chn C3 =10uF
20-0.7-0.7-2=16.6V
=5.2mW
C
0
2
1
6
Q
C
R
1
0
k
V
V
F
O
A
R
F
M
E
F
P
Q
i n
0
=
0
3
. 5
0 0
2
4
3.\Tng nhp:
Chn
=80
2
R
Chn
Chn
=0.25*Vcc=10V
=10*
=10*0.315mA/80=0.04mA
=10*0.04mA=0.4mW
k
3
Chn
=90
=0.7+2=2.7V
R3=VR3/
=2.7
=2.7/(0.04mA-0.315mA/80)=68.2k
chn R3=68k
=7.3/0.04mA=182.5k
Chn R6=180k
= =18/05=36
=5.14k
Chn R5=5.1k
= 1 (uF)
Chn C2 =100uF
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