You are on page 1of 10

Basic Physical Equations

Maxwells Equations for Homogeneous and Isotropic Materials


Time Variant Form Time Invariant Form

B t D H = + J cond = J tot t i D = ( x, y , z ) i B = 0 E = B = H D(r , t ) =

E = 0 H = J cond = J tot i D = ( x, y , z ) i B = 0 B = H D =E

(t ) E (r , )d

For a doped semiconductor = q p n + N D N A


+

Current Density Equations

Einstein Relationships

J n = q n nE + qDnn = n nEFn J p = q p pE + qD p p = p p EFp J tot = J n + J p

Dn =

kT n q kT Dp = p q

Continuity Equations

n 1 = Gn U n + i J n t q 1 p = G p U p + i J p t q

Bipolar Junction Transistor

Mode Cut-off

Base(p)-Emitter(n) junction bias Reverse,VBE<0

Base(p)-Collector(n) junction bias Reverse, VBC<0 Reverse, VBC<0 Forward, VBC >0 Forward, VBC >0

ForwardForward, VBE >0 Active Saturated Forward, VBE >0 Inverse-Active Reverse,VBE<0

NPN Ideal Doping Concentration

Real NPN Doping Concentration

Band Diagram of an unbiased NPN

B E C

n+ (E)

p (B) EC

n (C)

EI EC EF EI EV EF EV

EC EF EI

EV

Band Diagram of a Forward-biased Transistor


B Vcb<0 Vbe>0 E C

n++ (E)

p+ (B)

n (C)

EC
q(VbiBE-VBE)

EC EI EV
q(VbiBC+|VBC|)

EFp

EI

EV

EC EFn

EI EV

Minority Carriers Distribution In Forward-Active Mode


Can be found with continuity equation and boundary conditions. Base-Emitter Junction Bounday Conditions:
qV nB = nB0 Exp BE at the edge of the junction kT

ni2 nB0 = NA,B

qV pE = pE0 Exp BE at the edge of the junction kT

ni2 pE0 = ND,E

Base Collector Junction Bounday Conditions


qV nB = nB0 Exp BC 0 at the edge of the junction kT qV pc = pc0 Exp BC 0 at the edge of the junction kT

E N++

xp,BE xn,BE

xp,BE

x=0

B P+
qV nB0 Exp BE kT

WB + xp,BC WB

WB + xp,BC + xn,BC

C N

qV pE = pE 0 Exp BE kT

pC 0
nB0 pE 0

qV nB0 Exp BC 0 kT
xBE

qV pC 0 Exp BC 0 kT
xBC

WB

x pE Exp Lp

W
x qV nB ( x) nB0 Exp BE 1 kT WB

x pC 1 Exp Lp

Currents in Forward-Active Biased BJT (simplified)


pE nB

pC

eh+

eRec.

e-

h+

Jb2+Jc Jb1

Jc

Jb=Jb1+Jb2

Emitter Current = e- injected into the base + h+ injected From the Base Base Current = h+ injected to the emitter + h+ to be recombined with e- injected from emitter Collector Current = e- injected from the base BE Junction in Forward-Bias Electrons are injected from the emitter to the base Holes are injected from the base to the emitter. Some electrons in the base are recombined with majority holes, the others diffuse to the BC junction and drift across the reversebiased BC junction.

pE

nB

pC

Jb2+Jc Jb1

Jc

Jb=Jb1+Jb2

Jb1 =

qD p p E 0 LB

qV Exp BE kT

Holes diffusion from base to emitter

qV qW B nb 0 Exp BE Holes supply for recombination in the Q kT base = Jb2 = B 2 B


With Q =Total charge in the base, b =electron lifetime in the base, and

Wb = Base width
JC = qDn n B 0 qV Exp BE WB kT
Electrons diffusion from base to collector (assuming linear distribution in the base)

Jc = JB

WB 2 2 n , B Dn , B

1 1 = D p , E WB pE 0 D W N WB 2 + + p , E B A, B 2 n , B Dn , B Dn , B L p , E N D , E Dn , B L p , E nB 0

WB , N A, B , N D , E , b , Dn , B

Simplified BJT Structure

Real Integrated NPN Transistors Cross-sections

Phototransistors
Base (floating)

Emitter

I E = IC

P
I ph

N N

Collector Electron/holes are generated in reverse-biased BC Junction, creating a photocurrent I ph


I ph = qA G L dx = qAG L X BC I B

The photocurrent I ph acts as base current (the real I B is zero since the base is floating), and is amplified by the transistor effect. For a regular transistor, I E = I B + I C = (1 + ) I B For this phototransistor circuit, it becomes:

I E = (1 + ) I ph = I C

You might also like