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E = 0 H = J cond = J tot i D = ( x, y , z ) i B = 0 B = H D =E
(t ) E (r , )d
Einstein Relationships
Dn =
kT n q kT Dp = p q
Continuity Equations
n 1 = Gn U n + i J n t q 1 p = G p U p + i J p t q
Mode Cut-off
Base(p)-Collector(n) junction bias Reverse, VBC<0 Reverse, VBC<0 Forward, VBC >0 Forward, VBC >0
ForwardForward, VBE >0 Active Saturated Forward, VBE >0 Inverse-Active Reverse,VBE<0
B E C
n+ (E)
p (B) EC
n (C)
EI EC EF EI EV EF EV
EC EF EI
EV
n++ (E)
p+ (B)
n (C)
EC
q(VbiBE-VBE)
EC EI EV
q(VbiBC+|VBC|)
EFp
EI
EV
EC EFn
EI EV
E N++
xp,BE xn,BE
xp,BE
x=0
B P+
qV nB0 Exp BE kT
WB + xp,BC WB
WB + xp,BC + xn,BC
C N
qV pE = pE 0 Exp BE kT
pC 0
nB0 pE 0
qV nB0 Exp BC 0 kT
xBE
qV pC 0 Exp BC 0 kT
xBC
WB
x pE Exp Lp
W
x qV nB ( x) nB0 Exp BE 1 kT WB
x pC 1 Exp Lp
pC
eh+
eRec.
e-
h+
Jb2+Jc Jb1
Jc
Jb=Jb1+Jb2
Emitter Current = e- injected into the base + h+ injected From the Base Base Current = h+ injected to the emitter + h+ to be recombined with e- injected from emitter Collector Current = e- injected from the base BE Junction in Forward-Bias Electrons are injected from the emitter to the base Holes are injected from the base to the emitter. Some electrons in the base are recombined with majority holes, the others diffuse to the BC junction and drift across the reversebiased BC junction.
pE
nB
pC
Jb2+Jc Jb1
Jc
Jb=Jb1+Jb2
Jb1 =
qD p p E 0 LB
qV Exp BE kT
Wb = Base width
JC = qDn n B 0 qV Exp BE WB kT
Electrons diffusion from base to collector (assuming linear distribution in the base)
Jc = JB
WB 2 2 n , B Dn , B
1 1 = D p , E WB pE 0 D W N WB 2 + + p , E B A, B 2 n , B Dn , B Dn , B L p , E N D , E Dn , B L p , E nB 0
WB , N A, B , N D , E , b , Dn , B
Phototransistors
Base (floating)
Emitter
I E = IC
P
I ph
N N
The photocurrent I ph acts as base current (the real I B is zero since the base is floating), and is amplified by the transistor effect. For a regular transistor, I E = I B + I C = (1 + ) I B For this phototransistor circuit, it becomes:
I E = (1 + ) I ph = I C