LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA

LITE-ON SEMICONDUCTOR
T1M5F-A SERIES
TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS
TO-92 (TO-226AA)
Sensitive Gate Triacs Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110J ) Commutating di/dt of 1.6 Amps/msec at 110J High Surge Current of 12 Amps Pb-Free Package
TO-92 (TO-226AA)
TO-92
DIM. A MIN. 4.45 4.32 3.18 1.15 2.42 12.7 2.04 2.93 3.43 MAX. 4.70 5.33 4.19 1.39 2.66 -----2.66 ---------
SEATING PLANE
B C D E F G H I
All Dimensions in millimeter

PIN ASSIGNMENT 1 2 3 Main Terminal 1 Gate Main Terminal 2
MAXIMUM RATINGS (Tj= 25J unless otherwise noticed)

Rating Peak Repetitive Off State Voltage (TJ= -40 to 110J, Sine Wave, 50 to 60 Hz; Gate Open) T1M5F400A T1M5F600A VDRM, VRRM 400 600 Volts Symbol Value Unit
On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50J) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25J) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power ( t 2.0us ,Tc = 80J) Average Gate Power (Tc = 80J , t 8.3 ms ) Peak Gate Current ( t 2.0us ,Tc = 80J) Peak Gate Voltage ( t 2.0us ,Tc = 80J) Operating Junction Temperature Range Storage Temperature Range
IT(RMS) ITSM It PGM PG(AV) IGM VGM

2
1.0 12.0 0.60 5.0 0.1 1.0 5.0 -40 to +110 -40 to +150
Amp Amps As Watt Watt Amp Volts J J

2
TJ
Tstg
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
REV. 2, Jun-2005, KTXD11
RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RthJL RthJC RthJA Value 60 75 150 260 Unit
J/W
J
TL
ELECTRICAL CHARACTERISTICS (Tc=25J unless otherwise noted)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate OPen) Tj =25J Tj =110J IDRM IRRM ------------10 100 uA uA
ON CHARACTERISTICS
Peak Forward On-State Voltage (ITM= 1A Peak @Tp 2.0 ms, Duty Cycle 2%) VTM IGT1 IGT2 IGT3 IGT4 ------------------------------1.9 5.0 5.0 5.0 7.0 Volts
Gate Trigger Current (Continuous dc) (VD = 12 Vdc; RL = 100 Ohms)
mA
Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA)
IH
----
1.5
10
mA
tgt VGT1 VGT2 VGT3 VGT4 IL1 IL2 IL3 IL4 VGD
---------------------------0.1
2 0.66 0.77 0.84 0.88 1.6 10.5 1.5 2.5 ----
---2.0 2.0 2.0 2.5 15 20 15 15 ----
us
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc; RL =100 Ohms)
Volts
Latching Current (VD=12V,IG= 10 mA)
mA
Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 J)
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110J) dv/dt 20 60 ---V/us
Repetitive Critical Rate of Rise of On-State Current Pulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hz Rate of Change of Commutating Current (V D = 400 V, I TM = .84 A, Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110 C, f = 250 Hz, with Snubber)
di/dt
----
----
10
A/us
di/dt(c)
1.6
----
----
A/ms
110
110
a = 30
a = 30
Ta,AMBIENT TEMPERATURE(J)
100
100
Tc,CASE TEMPERATURE(J)
90
60 DC 90
60
90
90
DC
80 70
80 70 60
180
180
60
120
50 40 30 20 0.00
120
50 40 30 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
IT(RMS),RMS ON-STATE CURRENT(AMPS)
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
1.2
DC
Ta,AMBIENT TEMPERATURE(J)
1.0
180
0.8
120
0.6
90
0.4
60
0.2
a = 30
0.0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 3. Power Dissipation
16
ITSM, PEAK SURGE CURRENT (AMPS)
12
4 TJ=25J f= 60MHz 0 1 10 100
NUMBER OF CYCLES
Figure 6. Maximum Allowable Surge Current
Specifications mentioned in this publication are subject to change without notice.

LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA

Uploaded by

Copyright:

Available Formats

LITE-ON SEMICONDUCTOR

Sensitive Gate Triacs Sillicon Bidirectional Thyristors

All Dimensions in millimeter

MAXIMUM RATINGS (Tj= 25J unless otherwise noticed)

IT(RMS) ITSM It PGM PG(AV) IGM VGM

Amp Amps As Watt Watt Amp Volts J J

REV. 2, Jun-2005, KTXD11

RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES

ELECTRICAL CHARACTERISTICS (Tc=25J unless otherwise noted)

Gate Trigger Current (Continuous dc) (VD = 12 Vdc; RL = 100 Ohms)

2 0.66 0.77 0.84 0.88 1.6 10.5 1.5 2.5 ----

---2.0 2.0 2.0 2.5 15 20 15 15 ----

Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc; RL =100 Ohms)

Latching Current (VD=12V,IG= 10 mA)

Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 J)

RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES

IT(RMS),RMS ON-STATE CURRENT(AMPS)

IT(RMS),RMS ON-STATE CURRENT(AMPS)

Figure 1. RMS Current Derating

Figure 2. RMS Current Derating

IT(RMS),RMS ON-STATE CURRENT(AMPS)

Figure 3. Power Dissipation

RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES

ITSM, PEAK SURGE CURRENT (AMPS)

4 TJ=25J f= 60MHz 0 1 10 100

Figure 6. Maximum Allowable Surge Current

Specifications mentioned in this publication are subject to change without notice.

You might also like