HACETTEPE UNIVERSITY DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING ELE 456 POWER ELECTRONICS LABORATORY

EXPERIMENT_1 STATIC CHARACTERISTICS OF POWER SEMICONDUCTOR DEVICES 1. OBJECTIVES The object of the experiment is to investigate the forward and reverse characteristics of silicon diode, thyristor (SCR), and MOSFET. IMPORTANT NOTES When using a double beam oscilloscope with shared common connection, great care must be taken to ensure that the common connection of each channel is effectively at the same point in the circuit, otherwise the supply may be short circuited through the oscilloscope. It is good practice to use only one connection for common, where possible. When a current waveform is to be observed on the oscilloscope, a voltage proportional to the current is taken as input signal to the oscilloscope. For this purpose we use a non inductive type, 1 25 W resistance. 2. PRELIMINARY WORK 2.1 Draw the schematic symbol of a diode. Show anode and cathode terminals. Plot a typical diode output characteristic, anode current versus anode-cathode voltage. Show: - forward voltage drop, - reverse leakage current, - reverse breakdown voltage. 2.2 Draw the systematic symbol of a silicon controlled rectifier (SCR). Show anode, cathode and gate terminals. Plot I-V characteristics of a SCR. Show: - forward breakover voltage as a function of gate current, - reverse breakdown voltage, - forward voltage drop on SCR in conducting state, - holding current, - latching current. 2.3 Draw the schematic symbol of an n-channel Power Mosfet. Show drain, source and gate terminals. Plot typical I-V characteristics of an n-channel Power Mosfet for various gate-to-source voltages. Show saturation & linear regions. Show also operation at negative drain-tosource voltage on the same characteristic, with and without gate-to-source voltage.

3. EXPERIMENTAL WORK PART _A: SILICON DIODE Test_1: Reverse Blocking Characteristics (Leakage Test): Determine the reverse characteristics of the silicon diode using the circuit shown in Fig_1. Required equipment for this test: VSOURCE: 0-270 Volts Variac, IMAX= 3.7 A, f =50 Hertz, (Devotrans) Single Phase Rectifier: 0-250V DC, adjustable. Diode: 20A, 1000V MR2010SR Rheostat: 20 , 5A Voltmeter: 0-400 V AC (Gemta) Multimeter: Ammeter, 1 A mean Test_2: Forward Conduction (Conduction Test): Determine the forward characteristics of the silicon diode using the circuit shown in Fig_2, and record the value of the threshold voltage. Required equipment for this test: VSOURCE: Variable DC, 0-30V Power Supply Rheostat: 20 , 5A Ammeter: 0-15 A DC (Gemta) Multimeter: Voltmeter, 2 V mean Diode: 20A, 1000V MR2010SR Test_3: Resistive and Inductive Load Test: Connect the silicon diode as shown in Fig_3. Adjusting the load rheostat to 20 , sketch the waveforms at Y1 (anode-cathode voltage) and Y2 (device current inverted) for a resistive load when the output of the variac is 50 VRMS respectively. Switch the CRO into the X-Y mode and sketch the I-V characteristic to scale of the silicon diode. Connect an inductive load series to the 20 resistive load, and repeat Test_3 for a 50 VRMS supply voltage. Required equipment for this test: VSOURCE: 0-270 Volts Variac, IMAX= 3.7 A, f =50 Hertz, (Devotrans) CRO: TDS3032B Tektronix Oscilloscope Ammeter: 0-15 A DC (Gemta) Voltmeter: 0-400 V AC (Gemta) Diode: 20A, 1000V MR2010SR Resistive Load (Rheostat): 20 , 5A Resistance for current measurement: 1 , 25 W Inductive Load: 617 mH (for inductive test only)

PART_B: SILICON CONTROLLED RECTIFIER (SCR) Test_4: Reverse Blocking Characteristics of SCR Replace the diode in Fig_1 with SCR, and determine the reverse characteristics of SCR with gate open-circuited. Required equipment for this test: VSOURCE: 0-270 Volts Variac, IMAX= 3.7 A, f =50 Hertz, (Devotrans) Single Phase Rectifier: 0-250V DC SCR: 800 V, 25 A 25RIA80 Rheostat: 20 , 5A Voltmeter: 0-400 V AC (Gemta) Multimeter: Ammeter, 1 A mean Test_5: Forward Blocking Characteristics of SCR Reverse the polarity of the SCR in Test_4 and determine the forward blocking characteristics with the gate again open circuited. Required equipment for this test: same as in Test_4. Test_6: SCR Forward Breakover Voltages: Replace the silicon diode in Fig_3 with SCR and connect the gate circuit as shown in Fig_4. Apply about 10 volts AC between anode and cathode and slowly increase the gate current until the SCR turns on. This point can be determined by connecting the CRO across Y1-COM to observe the waveforms in Fig_5. By slightly altering the value of gate current IG, the value of forward breakover voltage V (BO) can be reduced to a low value or increased to a high value. Take a set of measurements covering the full range of V (BO) up to the maximum attainable value, noting the corresponding value of gate current at each step. Required equipment for this test: VSOURCE: 0-270 Volts Variac, IMAX= 3.7 A, f =50 Hertz, (Devotrans) CRO: TDS3032B Tektronix Oscilloscope Ammeter: 0-15 A DC (Gemta) Voltmeter: 0-400 V AC (Gemta) SCR: 800 V, 25 A 25RIA80 Diode: 20A, 1000V MR2010SR Resistive Load (Rheostat): 20 , 5A Resistance for current measurement: 1 , 25 W VGATE-SOURCE: 2 V DC AmmeterGATE: 0-1 A DC (Gemta)

Test_7: Forward Conduction of SCR: Replace the silicon diode in Fig_2 with SCR, and connect the gate circuit as shown in Fig_4. Set the gate current to a typical value. Determine the forward characteristics of the SCR in the forward conducting state. Be sure to take several readings at low anode current in the region of threshold voltage. Then, decrease the anode current to 200 mA. Now set IG= 0, and slowly decrease the anode current and try to detect the point where the SCR switches from the forward conducting state to the forward blocking state. This value of the anode current is called the "holding current", IH.

Required equipment for this: VSOURCE: Variable DC, 0-30V Rheostat: 20 , 5A Ammeter: 0-15 A DC (Gemta) Multimeter: Voltmeter, 2 V mean SCR: 800 V, 25 A 25RIA80 Resistive Load (Rheostat): 20 , 5A VGATE-SOURCE: 2 V DC (from DC Power Supply) AmmeterGATE: 0-1 A DC (Gemta) Test_8: Resistive Load Test: Replace the diode in Fig_3 with SCR and connect the gate circuit as shown in Fig_4. Keeping the value of load resistance at the same value used for Test_3, and also the output voltage of the variac at about 100 VRMS, for a sufficient gate current, observe the waveforms at Y1 (anode-cathode voltage) and Y2 (device current inverted). Required equipment for this test: same as in Test_6. Test_9: Inductive Load Test Connect the inductive load in series with the resistive load in Fig_3. Repeat Test_8. Required equipment for this test: Same as in Test_8 + Inductive Load of L = 617 mH. PART_C: MOSFET Test_10: Forward and Reverse Characteristics: Determine the forward and reverse characteristics of MOSFET using the circuit shown in Fig_6, for various gate-to-source voltages (VGS= 3V, 5V, and 10V). Increase the dc source voltage from 0 to Vmax, measure the drain current. Repeat the test for negative input voltage, with VGS= 10V and without gate-to-source voltage applied. Required equipment for this test: VSOURCE: 10 V DC (for gate-to-source input), DC Power Supply VSOURCE: 20 V DC (for drain-to-source input), DC Power Supply Mosfet: 400 V, 10 A, IRF740, N-Channel RG: 300 , 1 W RD: 90 , Lamp Load CRO: TDS3032B Tektronix Oscilloscope Multimeter: Ammeter, 1 A mean 4. RESULTS AND CONCLUSIONS 1. From the results of Test_1 and Test_2 plot the I-V characteristics of the diode. 2. From the results of Test_3 plot anode current and anode cathode voltage waveforms of the diode for resistive and inductive loads. 3. From the results of Test_4, Test_5, Test_6 and Test_7 plot the I-V characteristics of the SCR. Use different current scales if necessary. 4. Plot a graph of V (BO) against IG from the results of Test_6. Comment on the shape of all characteristics. 5. Plot I-V characteristics of MOSFET from the results of Test_10. 6. Determine RDson value from forward characteristics obtained in Test_10.

AVO (M8)
20 Rheostat

A
+ Variable 230 V DC +

V
Rectifier Type 300 V DC

Fig_1: Circuit used in Test_1, and Test_4

0-1 A DC + -

A
20 5A AVO 3V Mean +

Fig_2: Circuit used in Test_2, Test_5 and Test_7 Y2 0-15 DC 220 V AC Y1 COM 1

~
V 0-400 V AC
LOAD 20 5A

3.7 A Variac Fig_3: Circuit used in Test_3, Test_6, Test_8, and Test_9