AUIRFP2907Z

AUTOMOTIVE GRADE HEXFET Power MOSFET

Features

D

PD - 97550

Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

V(BR)DSS RDS(on) max. ID

75V 4.5m 170A

G S

Description
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

TO-247AC
G D S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.

Parameter
ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25C Maximum Power Dissipation Linear Derating Factor VGS EAS EAS (tested) IAR EAR TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Tested Value i Avalanche Current c Repetitive Avalanche Energy h Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy (Thermally Limited)

Max.
170 120 680 310 2.0 20 520 690 See Fig.12a,12b,15,16 -55 to + 175 300 10 lbfin (1.1Nm)

Units
A

W W/C V mJ A mJ C

Thermal Resistance
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Parameter

Typ.
0.24

Max.
0.49 40

Units
C/W

HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/

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Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Min. Typ. Max. Units

75 2.0 180 0.069 3.5 4.5 4.0 20 250 200 -200

Conditions

V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 90A V VDS = VGS, ID = 250A S VDS = 25V, ID = 90A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

Min. Typ. Max. Units

180 46 65 19 140 97 100 5.0 13 7500 970 510 3640 650 1020 270 pF nC ns

Conditions
ID = 90A VDS = 60V VGS = 10V VDD = 38V ID = 90A RG = 2.5 VGS = 10V Between lead,

f f

nH

6mm (0.25in.) from package

S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V

Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

41 59 90 A 680 1.3 61 89 V ns nC

Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 90A, VGS = 0V TJ = 25C, IF = 90A, VDD = 38V di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.13mH, RG = 25, IAS = 90A, VGS =10V. Part not recommended for use above this value. ISD 90A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%.

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to 80% VDSS.

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

This value determined from sample failure population,

starting TJ = 25C, L=0.13mH, RG = 25, IAS = 90A, VGS =10V.

R is measured at TJ of approximately 90C.

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Qualification Information
Automotive (per AEC-Q101) Qualification Level

Comments: This part number(s) passed Automotive qualification. IRs Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247 MSL1 Class M4 (425V) AEC-Q101-002 Class H2 (4000V) AEC-Q101-001 Class C5 (1125V) AEC-Q101-005 Yes

Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant

ESD

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.

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AUIRFP2907Z
10000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V

1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V

ID, Drain-to-Source Current (A)

1000
BOTTOM

ID, Drain-to-Source Current (A)

BOTTOM

100

100 4.5V

10

4.5V

60s PULSE WIDTH

1 0.1 1 Tj = 25C 10 100 0.1 1 10

60s PULSE WIDTH

Tj = 175C 10

100

V DS, Drain-to-Source Voltage (V)

V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000
Gfs, Forward Transconductance (S)

200 T J = 25C 150

ID, Drain-to-Source Current ()

100

T J = 175C

10

T J = 25C

100

T J = 175C

1 VDS = 25V 60s PULSE WIDTH 2 4 6 8 10

50 V DS = 10V 380s PULSE WIDTH 0 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A)

0.1

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance vs. Drain Current

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AUIRFP2907Z
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd

12.0 ID= 90A

VGS, Gate-to-Source Voltage (V)

10.0 8.0 6.0 4.0 2.0 0.0

VDS= 60V VDS= 38V VDS= 15V

C, Capacitance(pF)

10000

Ciss Coss

1000

Crss

100 1 10 100

50

100

150

200

VDS, Drain-to-Source Voltage (V)

QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

1000

10000 OPERATION IN THIS AREA LIMITED BY R DS(on)

ISD, Reverse Drain Current (A)

T J = 175C 100

ID, Drain-to-Source Current (A)

1000

100

100sec

10

TJ = 25C

10 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec

VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)

0.1 100 1000 VDS, Drain-to-Source Voltage (V)

nce

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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AUIRFP2907Z
175 150
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5

ID = 90A VGS = 10V

2.0

125 100 75 50 25 0 25 50 75 100 125 150 175 T C , Case Temperature (C)

1.5

1.0

0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

T J , Junction Temperature (C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Normalized On-Resistance vs. Temperature

D = 0.50
Thermal Response ( Z thJC )
0.1

0.20 0.10 0.05

0.01

0.02 0.01

R1 R1 J 1 2

R2 R2

R3 R3 3 C 3

Ri (C/W) 0.1224 0.1238 0.2433

i (sec) 0.000360 0.001463 0.021388

0.001

SINGLE PULSE ( THERMAL RESPONSE )

Ci= i/Ri Ci i/Ri

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc

0.001 0.01 0.1 1

0.0001 1E-006 1E-005 0.0001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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AUIRFP2907Z
2500

EAS , Single Pulse Avalanche Energy (mJ)

15V

2000

VDS

DRIVER

ID 16A 25A BOTTOM 90A TOP

RG
VGS 20V

D.U.T
IAS tp

+ V - DD

1500

0.01

1000

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp

500

0 25 50 75 100 125 150 175

Starting T J , Junction Temperature (C)

I AS

Fig 12b. Unclamped Inductive Waveforms

QG

Fig 12c. Maximum Avalanche Energy vs. Drain Current

10 V
QGS VG
VGS(th) Gate threshold Voltage (V)
3.5

QGD
4.0

Charge

3.0

Fig 13a. Basic Gate Charge Waveform

2.5

ID = 250A

2.0

1.5

L
0

DUT 1K

VCC

1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200

T J , Temperature ( C )

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage vs. Temperature

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AUIRFP2907Z
1000

Avalanche Current (A)

Duty Cycle = Single Pulse

100

0.01 0.05
10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses

0.10

1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

600

EAR , Avalanche Energy (mJ)

500

TOP Single Pulse BOTTOM 1% Duty Cycle ID = 90A

400

300

200

100

0 25 50 75 100 125 150 175

Starting T J , Junction Temperature (C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC Iav = 2DT/ [1.3BVZth] EAS (AR) = PD (ave)tav

Fig 16. Maximum Avalanche Energy vs. Temperature

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AUIRFP2907Z

D.U.T

Driver Gate Drive

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

V DD

VDD

+ -

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %

RD

D.U.T.
+

-V DD

Fig 18a. Switching Time Test Circuit

VDS 90%

10% VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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AUIRFP2907Z
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Part Number

AUFP2907Z

IR Logo

YWWA
XX or XX

Date Code Y= Year WW= Work Week A= Automotive, LeadFree

Lot Code

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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Ordering Information
Base part AUIRFP2907Z Package Type TO-247 Standard Pack Form Tube Complete Part Number Quantity 25 AUIRFP2907Z

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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.

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