Stps 20 H 100 CT

STPS20H100CT/CF/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 10 A
A1
VRRM
100 V
A2
Tj
175C
VF (max)
0.64 V
A1
A2
NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
AVALANCHE RATED
INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
A1
A2
TO-220AB
STPS20H100CT
FEATURES AND BENEFITS
ISOWATT220AB
STPS20H100CF
A2
K
A1
A1
TO-220FPAB
STPS20H100CFP
A2
K
I2PAK
STPS20H100CR
A2
A1
D2PAK
STPS20H100CG
ABSOLUTE RATINGS (limiting values, per diode)

Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
IF(RMS)
RMS forward current
30
10
20
250
IF(AV)
Average forward
current = 0.5
TO-220AB
D2PAK / I2PAK
Tc = 160C
per diode
per device
ISOWATT220AB Tc = 145C
TO-220FPAB
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
IRRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
IRSM
Non repetitive peak reverse current
tp = 100 s square
Tstg
Storage temperature range
- 65 to + 175
175
10000
V/s
Tj
Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage

dPtot
1
thermal runaway condition for a diode on its own heatsink
* :
<
dTj
Rth( j a )
August 2002 - Ed: 3G
1/7
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c)
Junction to case
Unit
C/W
TO-220AB / D PAK / I PAK
Per diode
1.6
ISOWATT220AB / TO-220FPAB
Per diode
Total
0.9
Total
3.2
Coupling
0.15
Coupling
2.5
Rth (c)
Value
C/W
When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25C
Min.
VR = VRRM
Tj = 125C
VF **
Forward voltage drop
Pulse test :
Typ.
Max.
Unit
4.5
mA
V
Tj = 25C
IF = 8 A
0.71
Tj = 25C
IF = 10 A
0.77
Tj = 25C
IF = 16 A
0.81
Tj = 25C
IF = 20 A
0.88
Tj = 125C
IF = 8 A
0.56
0.58
Tj = 125C
IF = 10 A
0.59
0.64
Tj = 125C
IF = 16 A
0.65
0.68
Tj = 125C
IF = 20 A
0.67
0.73
* tp = 5 ms, < 2%
** tp = 380 s, < 2%
To evaluate the maximum conduction losses use the following equation :

P = 0.55 x IF(AV) + 0.009 x IF2(RMS)
Fig. 1: Average forward power dissipation versus

average forward current (per diode).
Fig. 2: Average forward current versus ambient

temperature (=0.5, per diode).
PF(av)(W)
8
IF(av)(A)
= 0.05
= 0.1
= 0.2
12
= 0.5
Rth(j-a)=Rth(j-c)
TO220AB
10
=1
Rth(j-a)=15C/W
ISOWATT220AB
TO-220FPAB
Rth(j-a)=40C/W
2
=tp/T
IF(av) (A)
0
2/7
10
=tp/T
tp
12
25
tp
Tamb(C)
50
75
100
125
150
175
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D2PAK, I2PAK)
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
0
1E-3
Fig. 4: Non repetitive surge peak forward current

versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
120
100
Tc=50C
Tc=75C
80
Tj=75C
40
IM
20
t
t(s)
=0.5
1E-2
1E-1
1E+0
1.0
0.8
0.8
0.6
0.4
= 0.2
= 0.1
0.2
0.2
tp(s)
0.0
1E-3
1E-2
1E-1
1E+0
1E-1
1E+0
= 0.5
= 0.2
= 0.1
Single pulse
tp(s)
tp
Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).
1E+4
1E-2
Zth(j-c)/Rth(j-c)
Single pulse
=tp/T
t(s)
Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
= 0.5
Tj=125C
t
=0.5
0
1E-3
1.0
0.4
Tj=50C
60
Tc=125C
Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)
(TO-220AB, D2PAK, I2PAK).
0.6
IM(A)
140
0.0
1E-2
1E-1
1E+0
1E+1
Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).
C(pF)
IR(A)
1000
F=1MHz
Tj=25C
Tj=150C
1E+3
Tj=125C
1E+2
500
Tj=100C
1E+1
1E+0
1E-2
200
Tj=25C
1E-1
VR(V)
VR(V)
0
10
20
30
40
50
60
70
80
90 100
100
10
20
50
100
3/7
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35m) (D2PAK).
Rth(j-a) (C/W)
IFM(A)
80
70
60
Tj=150C
Typical values
10.0
50
Tj=125C
Tj=125C
Typical values
40
Tj=25C
30
1.0
20
10
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
S(Cu) (cm)
0
10
15
20
25
30
35
PACKAGE MECHANICAL DATA

TO-220AB
REF.
H2
L5
L7
Dia
OPTIONAL
L6
L2
L9
D
F2
F1(x2)
L4
F
E
G1
G
4/7
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.30
4.60
0.169
0.181
1.22
1.32
0.048
0.052
2.40
2.72
0.094
0.107
0.33
0.70
0.013
0.028
0.61
0.93
0.024
0.037
1.14
1.70
0.045
0.067
1.14
1.70
0.045
0.067
4.95
5.15
0.195
0.202
2.40
2.70
0.094
0.106
10.00
10.40
0.394
0.409
16.00 Typ.
0.630 Typ.
13.00
14.00
0.512
0.551
2.65
2.95
0.104
0.116
14.80
15.75
0.583
0.620
6.20
6.60
0.244
0.260
3.40
3.94
0.134
0.155
2.60 Typ.
0.102 Typ.
3.75
3.89
0.148
0.153
40
ISOWATT220AB
DIMENSIONS
REF.
Millimeters
Min.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
Max.
4.40
4.60
2.50
2.70
2.50
2.75
0.40
0.70
0.75
1.00
1.15
1.70
1.15
1.70
4.95
5.20
2.40
2.70
10.00
10.40
16.00 typ.
28.60
30.60
9.80
10.60
15.90
16.40
9.00
9.30
3.00
3.20
Inches
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.016
0.028
0.030
0.039
0.045
0.067
0.045
0.067
0.195
0.205
0.094
0.106
0.394
0.409
0.630 typ.
1.125
1.205
0.386
0.417
0.626
0.646
0.354
0.366
0.118
0.126

TO-220FPAB
REF.
A
B
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
G1
G
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.70
0.75
1
1.15
1.70
1.15
1.70
4.95
5.20
2.4
2.7
10
10.4
16 Typ.
28.6
30.6
9.8
10.6
2.9
3.6
15.9
16.4
9.00
9.30
3.00
3.20
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.018
0.027
0.030
0.039
0.045
0.067
0.045
0.067
0.195
0.205
0.094
0.106
0.393
0.409
0.63 Typ.
1.126
1.205
0.386
0.417
0.114
0.142
0.626
0.646
0.354
0.366
0.118
0.126
5/7
D2PAK
DIMENSIONS
REF.
Min.
C2
L2
D
L
L3
A1
B2
B
G
A2
2.0 MIN.
FLAT ZONE
V2
FOOT PRINT DIMENSIONS (in millimeters)

16.90
10.30
5.08
1.30
3.70
8.90
6/7
Millimeters
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2
Typ. Max. Min.
Inches
Typ. Max.
4.30
4.60 0.169
0.181
2.49
2.69 0.098
0.106
0.03
0.23 0.001
0.009
0.70
0.93 0.027
0.037
1.25 1.40
0.049 0.055
0.45
0.60 0.017
0.024
1.21
1.36 0.047
0.054
8.95
9.35 0.352
0.368
10.00
10.28 0.393
0.405
4.88
5.28 0.192
0.208
15.00
15.85 0.590
0.624
1.27
1.40 0.050
0.055
1.40
1.75 0.055
0.069
0.40
0.016
0
8
0
8
I2PAK
DIMENSIONS
REF.
Inches
Min.
Typ. Max. Min.
Typ. Max.
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
0.70
0.93 0.028
0.037
b1
1.20
1.38 0.047
0.054
b2
1.25
0.45
0.60 0.018
0.024
C2
1.21
1.36 0.048
0.054
8.95
9.35 0.352
0.368
1.40
0.049 0.055
2.44
2.64 0.096
0.104
10.00
10.28 0.394
0.405
13.10
13.60 0.516
0.535
L1
3.48
3.78 0.137
0.149
L2
1.27
1.40 0.050
0.055
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS20H100CT
STPS20H100CT
TO-220AB
2.20g
50
Tube
STPS20H100CF
STPS20H100CF
ISOWATT220AB
2.08g
50
Tube
STPS20H100CFP
STPS20H100CFP
TO-220FPAB
STPS20H100CR
STPS20H100CR
STPS20H100CG
STPS20H100CG
STPS20H100CG-TR
Millimeters
STPS20H100CG
2.0 g
50
Tube
1.49g
50
Tube
1.48g
50
Tube
1.48g
1000
Tape & reel
I PAK
D PAK
D PAK
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics

2002 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7
This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.

Stps 20 H 100 CT

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Stps 20 H 100 CT

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STPS20H100CT/CF/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

NEGLIGIBLE SWITCHING LOSSES

FEATURES AND BENEFITS

ABSOLUTE RATINGS (limiting values, per diode)

Repetitive peak reverse voltage

RMS forward current

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Storage temperature range

Maximum operating junction temperature *

dV/dt Critical rate of rise of reverse voltage

TO-220AB / D PAK / I PAK

TO-220AB / D PAK / I PAK

TO-220AB / D PAK / I PAK

When the diodes 1 and 2 are used simultaneously :

Reverse leakage current

Forward voltage drop

To evaluate the maximum conduction losses use the following equation :

Fig. 1: Average forward power dissipation versus

Fig. 2: Average forward current versus ambient

Fig. 4: Non repetitive surge peak forward current

Fig. 7: Reverse leakage current versus reverse

Fig. 6: Relative variation of thermal impedance

Fig. 5: Relative variation of thermal impedance

Fig. 8: Junction capacitance versus reverse

Fig. 10: Thermal resistance junction to ambient

PACKAGE MECHANICAL DATA

PACKAGE MECHANICAL DATA

FOOT PRINT DIMENSIONS (in millimeters)

Typ. Max. Min.

Typ. Max. Min.

Tape & reel

Epoxy meets UL94,V0

The ST logo is a registered trademark of STMicroelectronics

This datasheet has been download from:

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