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QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D D
D-PAK
FQD Series
G!
Parameter
Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD6N60C
600 4 2.4 16 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300
Units
V A A A V mJ A mJ V/ns W W/C C C
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
Typ
----
Max
1.56 50 110
Units
C/W C/W C/W
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FQD6N60C Rev. A
Electrical Characteristics
Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
600 ------
-0.6 -----
V V/C A A nA nA
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A
(Note 4)
2.0 ---
-1.7 4.8
4.0 2.0 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
--------
15 45 45 45 16 3.5 6.5
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.0 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s
(Note 4)
------
---310 2.1
A A V ns C
FQD6N60C Rev. A
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10
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
150 C -55 C
10
0
25 C
10
-1
10
-2
10
-1
10
10
10
-1
10
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
VGS = 10V
4
10
10
VGS = 20V
150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
-1
1
Note : TJ = 25
10
12
14
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
800
Capacitances [pF]
Ciss
VDS = 480V
600
Coss
400
Note ; 1. VGS = 0 V 2. f = 1 MHz
200
Crss
2
Note : ID = 5.5A
0 -1 10
10
10
12
16
FQD6N60C Rev. A
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1.1
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 2.0 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
10
10
10 s 100 s 1 ms 10 ms DC
3.0
10
1.5
Notes :
10
-1
10
10
10
0.0 25
50
75
100
125
150
10
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C t) = 1 .5 6 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQD6N60C Rev. A
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VGS
Qgd
DUT
3mA
Charge
RL VDD
VDS
90%
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
FQD6N60C Rev. A
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DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
FQD6N60C Rev. A
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Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FQD6N60C Rev. A
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TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
8 FQD6N60C Rev. A
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