2N3055

SILICON NPN TRANSISTOR

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SGS-THOMSON PREFERRED SALESTYPE

DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

1 2
TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol V CBO V CER V CEO V EBO IC IB P tot T s tg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 100) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current T otal Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature
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Valu e 100 70 60 7 15 7 115 -65 to 200 200

Unit V V V V A A W
o o

C C

October 1995

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2N3055
THERMAL DATA
R thj -ca se Thermal Resistance Junction-case Max 1.5
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C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbo l I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = 100 V V CE = 100 V V CE = 30 V V EB = 7 V I C = 200 mA I C = 200 mA IC = 4 A I C = 10 A IC = 4 A IC IC IC IC IC IC = = = = = = 0.5 A 0.5 A 0.5 A 0.5 A 4 A 10 A R BE = 100 60 70 1 3 1.5 Gr oup Gr oup Gr oup Gr oup 4 5 6 7 20 35 60 120 20 5 50 75 145 250 70 1.6 2.5 2.87 MHz A T j = 150 o C Min . T yp. Max. 1 5 0.7 5 Unit mA mA mA mA V V V V V

V CEO(sus) Collector-Emitter Sustaining Voltage V CER(sus ) Collector-Emitter Sustaining Voltage V CE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

IB = 400 mA IB = 3.3 A V CE = 4 V VCE VCE VCE VCE V CE VCE = = = = = = 4 4 4 4 4 4 V V V V V V

h FE1 /hFE1 DC Current Gain fT I s /b Transition frequency Second Breakdown Collector Current

I C = 0.5 A IC = 1 A V CE = 40 V

VCE = 4 V V CE = 4 V

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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2N3055

TO-3 (H) MECHANICAL DATA

mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX.

DIM.

P G

P003N
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2N3055

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .

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