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\
|
=
RT
Q
c Rate
o
exp
Where; co = constant, R = Gas constant (1.987 cal/mol*K),
T = absolute temperature (K), Q = activation energy
(cal/mol).
Or;
Plotting ln(rate) of some reaction versus 1/T, the slope of
the curve will be Q/R and consequently Q can be
calculated.
( ) ( )
RT
Q
c rate
o
= ln ln
The Arrhenius plot
of ln(rate) versus
1/T can be used to
determine the
activation energy
for a reaction.
Example;
Suppose that interstitial atoms are found to move from one
site to another at the rate of 510^8 jumps/s at 500C and
810^10 jumps/s at 800C . Calculate the activation energy
Q for the process.
Mechanisms for Diffusion
The created disorder (i.e., increased entropy) by the
vacancies (defects) that exist in the material helps
minimize the free energy and therefore, the
thermodynamic stability of a crystalline material. In
materials containing vacancies, atoms move or also jump
from one lattice position to another by a process known as
self-diffusion . Two important mechanisms by which
atoms or ions can diffuse;
Vacancy Diffusion; In self diffusion and diffusion
involving substitutional atoms, an atom leaves its lattice
site to fill a nearby vacancy (thus creating a new vacancy
at the original lattice site). Continuously, countercurrent
flows of atoms and vacancies called vacancy diffusion
occur. As the temp. increases the number of vacancies
increases.
Interstitial Diffusion; A small interstitial atom or ion can
move from interstitial site to another, no vacancies are
required for this mechanism. The smaller the interstitial
atoms the faster the diffuse can be. Because more
interstitial sites can exist than vacancies, interstitial
diffusion occurs more easily than vacancy diffusion.
Diffusion mechanisms in materials: (a) vacancy or
substitutional atom diffusion and (b) interstitial diffusion.
Diffusion of unlike atoms in materials also occurs.
Consider a nickel sheet bonded to a copper sheet. At high
temperatures nickel atoms gradually diffuse into the
copper and copper atoms migrate into nickel until both
atoms are uniformly distributed.
Diffusion of
copper atoms
into nickel.
Eventually, the
copper atoms are
randomly
distributed
throughout the
nickel.
Activation Energy for Diffusion
A diffusing atom must squeeze past the surrounding
atoms to reach its new site. For this to happen, energy
must be supplied to force the atom to its new position. The
atom is originally in a low energy, relatively stable
location. For the atom to be moved to a new location it
must overcome an energy barrier that is the activation
energy Q. The thermal energy supplies atoms or ions with
the energy needed to exceed this barrier.
Normally, less energy is required to squeeze an
interstitial atom past the surrounding atoms, consequently,
activation energies are lower for interstitial diffusion than
for vacancy diffusion.
Rate of Diffusion (Ficks First Law)
The rate at which atoms, ions, particles or other
species diffuse in a material can be measured by the flux
J.
Flux J; is the number of atoms passing through a plane of
unit area per unit time.
Ficks first law explains the net flux of atoms;
Where;
J = flux.
D = diffusivity or diffusion coefficient (cm/s).
dc/dx = concentration gradient (atoms/ cm*cm).
dx
dc
D J =
The negative sign means that the flux of diffusing
species is from higher to lower concentrations, making the
dc/dx term negative, and hence J will be positive.
Concentration may be expressed as atoms percent
(at%), weight percent (wt%), mole percent (mol%), atom
fraction, or mole fraction. The units of concentration
gradient and flux will also change respectively.
If dealing with diffusion of ions, electrons, holes, etc.,
the units of J, D, and dc/dx will reflect the appropriate
species that are being considered.
At the microscopic scale the thermodynamic driving
force for diffusion is concentration gradient.
Concentration
gradient
Factors affecting diffusion are; Temperature and
Diffusion Coefficient.
The kinetics of process of diffusion are strongly
dependent on temperature. The diffusion coefficient D is
related to temperature by an Arrhenius type equation;
Where;
Q = activation energy (cal/mol) for diffusion of species
under consideration.
R = gas constant.
T = absolute temperature (K).
Do = The pre-exponential term (similar to co) and it is a
constant for a given diffusion system.
|
.
|
\
|
=
RT
Q
D D
o
exp
Types of Diffusion
Volume diffusion; the atoms move through thecrystal
from one regular or interstitial site to another. Because of
the surrounding atoms, the activation energy is large and
the rate of diffusion is relatively slow.
Grain boundary diffusion; atoms can also diffuse along
boundaries, interfaces, and surfaces in the material. Atoms
diffuse easily by grain boundary diffusion because the
atom packing is poor in the grain boundaries. Because
atoms can more easily squeeze their way through the
disordered grain boundary, the activation energy is low.
Surface diffusion; is easier still because there is even less
constraint on the diffusing atoms at the surface.
Composition Profile (Ficks Second Law)
Describes the dynamic, or non-steady state, diffusion
of atoms.
Ficks 2
nd
law is the differential equation;
If the diffusion coefficient is assumed not a function of
location x and the concentration (c) of diffusing species, a
simplified version of Ficks 2
nd
law can be written as
follows;
|
.
|
\
|
c
c
c
c
=
c
c
x
c
D
x t
c
|
|
.
|
\
|
c
c
=
c
c
2
2
x
c
D
t
c
Ficks 2
nd
law can assist in designing a variety of
materials processing techniques including the steel
carburizing heat treatment and dopant diffusion in
semiconductors.
Diffusion and Material Processing
Solidification, phase transformations, heat treatments, etc.
Diffusional processes become very important when
materials are used or processed at elevated temperatures.
Melting and Casting.
Sintering.
Grain Growth.
Diffusion Bonding.