Department Of Technical Education Andhra Pradesh

Name Designation Branch: Institute Year/semester Subject Subject code Topic Duration Sub topic Teaching aids :G sudhakar reddy. :Senior lecturer. :ECE :Government polytechnic narsipatnam. :iii semester. :Electronics circuits-i. :EC-302. :FET&UJT. :100min :Depletion MOSFETs :animation & photographs
EC302.37 TO 38 1

OBJECTIVES
Upon the completion of this topic the student will be able to know

Construction of Depletion MOSFETs.

Symbols of Depletion MOSFETs. Working principle of n- type depletion MOSFET Working principle of p type depletion MOSFET

EC302.37 TO 38

DO YOU KNOW
ENHANCEMENT MOSFET
D D
substrate

G
S

G
S

N channel N channel
EC302.37 TO 38 3

CIRCUIT SYMBOLS OF DEPLETION TYPE MOSFET

DEPLETION MOSFET
D D

substrate

G G S

S
N channel
EC302.37 TO 38 4

N channel

CONSTRUCTION
Depletion MOSFET may be Al layer Drain fabricated from the basic Si o2 MOSFET structure.
layer n+
Diffused n channel

source

Gate

n+

An n-type channel is obtained by diffusion between N+ type source and drain in an nchannel MOSFET.

p-type substrate

N channel Depletion MOSFET

EC302.37 TO 38 5

CONSTRUCTION
source
Gate

Al layer Drain

Si o2
layer n+
Diffused n channel

n+

p-type substrate

In depletion MOSFET a lightly doped n-type channel has been introduced between to heavily doped source& drain blocks,.

N channel Depletion MOSFET

EC302.37 TO 38 6

CONSTRUCTION OF P CHANNEL DEPLETION MOSFET

source
Gate

Depletion MOSFET may be Al layer Drain fabricated from the basic Si o2 MOSFET structure.
layer n+

n+
Diffused n channel

p-type substrate

An p-type channel is obtained by diffusion between p+ type source and drain in an pchannel MOSFET.

P channel Depletion MOSFET

EC302.37 TO 38 7

source

Gate

Al layer Drain

Si o2
layer n+
Diffused n channel

n+

p-type substrate

In p-channel depletion MOSFETs are made by using n-type substrate and diffusing a lightly doped p-type channel between two heavily doped P-type source & drain blocks

P channel Depletion MOSFET

EC302.37 TO 38

Symbols of p channel depletion MOSFET

D

substrate

G S S
P channel
EC302.37 TO 38

P channel
9

Working

Negative gate operation of a depletion MOSFET is called Its depletion mode Operation
Drain

source

V GS Gate

Al layer

n++++++++++ p-type substrate

When Vgs =0 electrons can Si o2 flow freely from source to drain through the conducting layer channel. since a channel exists between drain & source, Id flows even when Vgs =0. It is also known as normally ON MOSFET

N channel Depletion MOSFET

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10

Working
When negative voltage is applied to the gate as shown in Fig positive charges are induced in the channel by capacitor action

source

V GS Gate

Al layer

Drain

Si o2
layer

n++++++++++ p-type substrate

The induced positive charges make the channel less conductive and drain current decreases as V GS is made more negative.

N channel Depletion MOSFET

EC302.37 TO 38

11

Working
source
V GS Gate Al layer Drain

Si o2
layer

n++++++++++

N channel Depletion MOSFET With negative voltage a depletion MOSFET behave like JFET.
EC302.37 TO 38 12

When positive voltage is applied to the gate free

electrons are Induced channel .

This enhances the conductivity of the channel so

increasing amount of current between terminals Since the action of negative voltage on gate is to
deplete the channel of free n-type charge carriers so

named as depletion MOSFET.

EC302.37 TO 38 13

Drain Characteristics of depletion MOSFET

Id(ma)
8
VGS= +2V

VGS= +1V

VGS= 0V

}
}
20

When the gate source voltage is zero Enhancement Mode considerable drain current flows. When the gate is applied with negative voltage, positive charge are induced in the n-channel through the SiO2 layer of the gate capacitor.

6
VGS= -1V

VGS= -3V

Depletion Mode

2
5 0 10 Fig.38.3 15 V ds

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14

Drain Characteristics of depletion MOSFET

Id(ma)

8
6

}
}
5 10 15 20

Enhancement Mode

The conduction in nchannel FET is due to electrons i.e., the majority carriers.

4
2 0

Depletion Mode

Therefore the induced positive charges make the n-channel less conductive.
The drain current therefore gets reduced with increase in the gate bias voltage.
15

V ds

Fig. 38.3
EC302.37 TO 38

Drain Characteristics of depletion MOSFET

Id (ma)

}
}
5 10 15 20
Fig. 38.3

The distribution of charges in the channel results in depletion of majority carriers. Enhancement
Mode

6
4 2 0 V ds
Depletion Mode

That is why this type of FET is called depletion MOSFET.

The voltage drop due to the drain current causes the channel region nearer to the drain to be more depleted than the region due to the source.

EC302.37 TO 38

16

Drain Characteristics of depletion MOSFET

8 Id(ma) 6 4 2

}
}
5 10 Fig. 38. 3 15 20

Enhancement Mode

Depletion Mode

V ds

This is similar to the pinch off in JFET.

EC302.37 TO 38 17

Drain Characteristics of depletion MOSFET

The depletion MOSFET can also be operated in enhancement mode simply by applying a positive voltage to the gate Application of positive gate voltage results in induced negative channel in the n-type channel

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18

Drain Characteristics of depletion MOSFET

Thus the conductivity of the channel gets increased the n-channel depletion MOSFET can be used as in enhancement mode by changing the gate voltage polarity.

When a MOSFET is operated this way, we can it as dual mode MOSFET.

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19

SUMMARY

We discuss about N-channel, P-channel depletion MOSFETs Their construction, operation& drain characterstics This are also called as normal ON MOSFETs. These can be operated in both enhancement and depletion modes.

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20

QUIZ
1In a depletion MOSFET channel is

(a)Present (b)Not present (c)None

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21

Frequently asked questions

1. 2. 3. 4.

Draw the structural diagram of depletion MOSFET? Draw the SYMBOLS of N- type depletion MOSFET? Explain the working of N-channel depletion MOSFET? Draw the drain characteristics of N-channel depletion MOSFET?

EC302.37 TO 38

22