1.

Structure of the Lesson

Class

Intro

1. intro Overview of the lesson 2. Learning objective present learning objective of the lesson 3. Table of Content structure of the topics and subtopics in the lesson

Study 4. Lecture (75-90 minutes) present the lecture in detailed topics that covers all the learning objectives of the lesson. - each topics should be divided into subtopics (5-15 min in length is recommended) - if a subtopic goes over 15 minutes divide the subtopic into series of subtopics.

Assessment

Review

Class end

Course
Lesson # Title

Circuit theory and Laboratory

Lesson 2 Bipolar Junction Transistor biasing

SME

Dr. Nguyen Vu Thang

Intro The basic of electronic system is semiconductor device. The most famous and commonly used active devices are BJTs (Bipolar Junction Transistors) and FET (Field Effect Transistor). BJT can be use as amplifier and logic switches. Pre-required knowledge: structure and operation of diode

Learning Objectives At the end of this chapter, the students shoul be able to: Understand the basic transistor operation & configuration Discuss transistor parameters and characteristics

Table of Content Operating point Bias circuit Design Operations Transistor switching network PNP Transistors Bias Stabilization

Operating Point
IC (MA) ICMAX 25 80 A 70 A 60 A 20 50 A PCmax

Operating point within the limits of operation of transistor

30 A

15 Saturation 10 B

40 A

20 A D 5 10 A C IB = 0 A A VCE SAT 5 10 Cutoff 15 20 VCE MAX VCE (V)

Bias Circuit
Fixed bias Circuit Emitter stabilized bias Circuit Voltage - divider bias Circuit DC Bias with Voltage Feedback Miscellaneous bias configuration

Fixed-bias Circuit
Vcc RB RB IB C1 RC C IC IB RC

Vcc

Vcc
IC

B+ _ VBE E

+ _

C2

C B+ _ E VBE

+ _

Fixed-bias Circuit
Forward Bias of Base-Emitter
+ RB

Collector-Emitter loop
+ IC

RC _
+

Vcc

Vcc

IB

+ VBE _

VCE _

Base-Emitter loop + Vcc IBRB VBE = 0 =

Collector-Emitter loop = + = 0 =

Fixed-bias Circuit
Load Line Analysis
IC (MA) 50 A 40 A 30 A

20 A 10 A IB = 0 A 5 10 15 VCE (V)

RB

RC

+
IC

Vcc

+
VCE IB

(V)

**

Fixed-bias Circuit

Fixed-bias Circuit

Fixed-bias Circuit

Emitter stabilized bias circuit

Emitter stabilized bias circuit

Emitter stabilized bias circuit

(V)

Emitter stabilized bias circuit

For the emitter bias network, determine:

Emitter stabilized bias circuit

Voltage -divider bias circuit

Voltage -divider bias circuit

Voltage -divider bias circuit

Determine the dc bias voltage and the current IC for the voltage divider configuration

Voltage -divider bias circuit

Solution RTH = R1 R2 = 3.55k ETH =2V IB = 6.05 A IC = IB = (140)(6.05 A) =0.88mA VCE = VCC IC ( RC + RE ) =22V ( 0.85 mA )( 10 + 1.5) = 22v 9.8V =12.22 V

DC Bias with Voltage Feedback

DC Bias with Voltage Feedback

DC Bias with Voltage Feedback

EXAMPLE Determine the quiesent levels of ICQ and VCEQ

DC Bias with Voltage Feedback

DC Bias with Voltage Feedback

repeat above example using a beta of 135 ( 50 % more than above example )

DC Bias with Voltage Feedback

DC Bias with Voltage Feedback

Determine the dc level of IB and Vc

DC Bias with Voltage Feedback

Miscellaneous bias configuration

Example
For the network of fig a)Determine ICQ and VCEQ b)Find VB ,VC , VE and VBC

Miscellaneous bias configuration

Solution
a)The absence of RE reduces the reflection of resistive levels to simply that of RCand the equation for IB reduces to ; IB=
:

20 ;0.7 19.3 = 680 :(120)(4.7) 1.244

=15.51 A ICQ=IB =(120)(15.51 A) = 1.86 mA VCEQ =VCC - ICRC = 20V (1.86Ma)(4.7k) = 11.26V VB =VBE=0.7 V VC =VCE=11.26 V VE =0 V VBC=VB VC=0.7 V - 11.26 V =-10.56 V

Miscellaneous bias configuration

EXAMPLE Determine VC and VB for the network of fig

Miscellaneous bias configuration

Miscellaneous bias configuration

EXAMPLE Determine VCEQ and IE for the network of fig

Miscellaneous bias configuration

Solution:
Applying Kirchhoffs voltage law to the input circuit will result in -IBRB VBE IERE+VEE = 0 But IE = (+1)IB And VEE-VBE-(+1)IBRB-IBRB = 0 ; With IB= :(:1)

Substituting values yields 20;0.7 IB=240:(91)(2) =240:182=422 = 45.73 A IC= IB = (90)(45.73A) = 4.12 mA
19.3 19.3

Applying Kirchhoffs voltage law to the output circuit, we have -VEE + IERE+ VCE =0 But IE =(+1)IB And VCEQ = VEE (+1)IBRE =20 V (91)(45.73 A)(2k) =11.68 V IE =4.16 mA

Miscellaneous bias configuration

EXAMPLE Determine the voltage VCB and the current IB for the commom-base configuration

Miscellaneous bias configuration

Solution
Applying Kirchhorrs voltage law to the input circuit yields -VEE + IERE + VBE = 0 ; And IE=

Substituting values, we obtain 4 ;0.7 IE= = 2.75 mA 1.2 Applying Kirchhoffs voltage law to the output circuit gives -VCB + ICRC VCC = 0 And VCB = VCC ICRCwith IC IE =10 V (2.75 mA)(2.4k) =3.4 V IB =
2.75 = 60

= 45.8 A

Design Operations
Design of a Bias Circuit with an Emitte Feedback Resistor

Design Operations
Determine the resistor values for the network for the indicated operating point and supply voltage

Design Operations
VE = 10VCC =
RE = RC = IB = RB =

20V 10

= 2V

= 2mA= 1k =
20V;10V;2V 2mA

2V

;CE ;

= 4k

2mA 150

= 13.33A =
20;0.7;2 13.33

;BE ;

= 1.3M

Design Operations
Design of Current-Gain-Stabilized (Beta-Independent) Circuit

Design Operations
Determine the levels of RC, RE, R1, and R2, for the network of this Figure for the operating point indicated VCC = 20V

R1
= 10

RC + _

C2 AC output 10F

AC input

C1 10F R2

= 8

RE

CE

100F

Design Operations
VCC = 20V
1 20V 10

VE = 10VCC = RE =

= 2V

= 10mA= 200

2V

R1 C1 AC input 10F R2
= 10

RC

+
_

AC 10F output

C2

RC =

;CE ;

20V;8V;2V 10mA

= 1k

= 8

VB = VBE + VE = 0.7 + 2 = 2.7V

RE

CE

100F

Transistor switching network V = 5V

CC

Vi 5V RB RC 0.82

VC

5V

0V

68

= 125

0V

t
6.1

= 5

Transistor switching network

Example: Determine RB and RC for the transistor inverter of this Figure if ICsax = 10mA

VC 10V 10V RB 0V

VCC = 5V RC VC 10V

= 250
0V 0V

Transistor switching network

At saturation: and so that At saturation: IB=
R 10V 10mA = R 10V RC= 10mA = 1k

ICsat=

10mA 250

= 40A

Choosing IB = 60A to ensure saturation and using: V ;0.7V IB = i R

We obtain: RB=

Vi ;0.7V 10V ;0.7V = 60A = I

155k

Choose RB = 150k, which is a standard value. Then V ;0.7V 10V;0.7V IB = i R = 150k = 62A

And Therefore, use

IB = 62A

= 40A

RB= 150k, RC = 1k

PNP Transistor
-IERE +VBE - IBRB +VCC = 0 _ + + IB VCE _ _ _ RE + IE

_
RC + IB = R IC
VCC :VBE :(:1)R

-IERE +VCE ICRC +VCC = 0 VCE = -VCC + IC(RE+RC)

PNP Transistor
Example: Determine VCE for the voltage-divider bias configuration of this Figure 18 2.4 47 10F Vi B C + VBE _ E 10F

10 1.1

PNP Transistor
Testing the condition: Results in: RE 10R2 (120)(1.1k) 10(10 k) 132 k 100 k (sastified) Solving for VB, we have:
CC VB = R 2:R = 1 2

R V

10 k (;18 V) 47 k:10 k

= 3.16V

Note the similarity in format of the equation with the resulting negative voltage for VB. Applying Kirchhoffs voltage law around the base-emitter loop yields: VB - VBE VE = 0 and Substituting values, we obtain VE= -3.16 V (-0.7 V) = -3.16 V + 0.7 V = -2.46 V VE = VB VBE

PNP Transistor

Bias stabilization
: : 7.5 ( ) : 10

Bias stabilization

Shift in dc bias point due to change in temperature: 25 C and 100 C

Bias stabilization
=

= =

1 + / = ( + 1) + 1 + / / ( + 1): = + 1

= ( + 1) = + ( + 1) 1 (1 + / ) = = 1 (1 + 2 + / )

1 + / + 1 + /

1 + / = ( + 1) + 1 + /

Bias stabilization
Example
Calculate the stability factor and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following emitter-bias arrangements. (a) RB/RE = 250 ( RB = 250 RE) (b) RB/RE = 10 ( RB = 10 RE) (c) RB/RE = 0.01 ( RE = 100 RB)

Bias stabilization

Bias stabilization
Determine the stability factor S(VBE) and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following bias arrangements. (a) Fixed-bias with RB = 240k and = 100. (b) Emitter-bias with RB=240k, RE=1k, and =100. (c) Emitter-bias with RB=47k, RE=4.7k, and =100.

Bias stabilization

Bias stabilization
Determine the stability factor S(VBE) and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following bias arrangements. (a) Fixed-bias with RB = 240k and = 100. (b) Emitter-bias with RB=240k, RE=1k, and =100. (c) Emitter-bias with RB=47k, RE=4.7k, and =100.

Assessment

Quiz 1

Assessment

Quiz 2

Assessment

Quiz 3

Assessment

Quiz 4

IB, IC, VC?

Assessment

Quiz 5

Determine the following for the network of the above figure (a) S(ICO) (b) S(VBE) (c) S() using T1 as the temperature at which the parameter values are specified at (T2) as 25% more than (T1). (d) Determine the net change in IC if a change in operating conditions results in ICO increasing from 0.2 to 10A, VBE drops from 0.7 to 0.5V, and increases 25%.

Review Summary: this chapter provide Operating point, Bias circuits, Transistor switching network, Bias Stabilization. Main Bias circuits are: Fixed bias Circuit , Emitter stabilized bias Circuit, Voltage - divider bias Circuit