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1.5.1 Effective Mass
m
F
dk
E d q
= =
2
2
2
on accelerati
c
2 2
2
/
mass effective
dk E d
\
|
A
A
3
cm eV
1
volume
in states of number
) (
E
E
E D
c
( )
2 8
) (
3
h
E E m m
E D
c n n
c
t
( )
2 8
) (
3
h
E E m m
E D
v p p
v
t
Derived in Appendix I
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-16
1.7 Thermal Equilibrium and the Fermi Function
1.7.1 An Analogy for Thermal Equilibrium
- There is a certain probability for the electrons in the
conduction band to occupy high-energy states under
the agitation of thermal energy.
Dish
Vibrating Table
Sand particles
Appendix II. Probability of a State at E being Occupied
There are g
1
states at E
1
, g
2
states at
E
2
There are N electrons, which
constantly shift among all the states
but the average electron energy is
fixed at 3kT/2.
The equilibrium distribution is the distribution that
maximizes the number of combinations of placing n
1
in g
1
slots, n
2
in g
2
slots. :
There are many ways to distribute
N among n
1
, n
2
, n
3
.and satisfy the
3kT/2 condition.
ni/gi =
E
F
is a constant determined by the condition
= N n
i
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-18
1.7.2 Fermi FunctionThe Probability of an Energy State
Being Occupied by an Electron
Remember: there is only
one Fermi-level in a system
at equilibrium.
kT E E
f
e
E f
/ ) (
1
1
) (
+
=
E
f
is called the Fermi energy or
the Fermi level.
( ) kT E E
f
e E f
~ ) (
kT E E
f
>>
( ) kT E E
f
e E f
~1 ) (
kT E E
f
<<
Boltzmann approximation:
f(E)
0.5 1
E
f
E
f
kT
E
f
2kT
E
f
3kT
E
f
+ kT
E
f
E
f
+ 2kT
E
f
+ 3kT
E
( ) kT E E
f
e E f
~ ) (
( ) kT E E
f
e E f
~1 ) (
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-19
1.8 Electron and Hole Concentrations
}
=
band conduction of top
) ( ) (
c
E
c
dE E D E f n
( )
( )
) (
2 8
0
3
Ec E d e E E e
h
m m
kT E E
Ec E
c
kT E E
n n
c
f c
=
}
t
( )
dE e E E
h
m m
n
kT E E
E
c
n n
f
c
}
=
3
2 8t
1.8.1 Derivation of n and p from D(E) and f(E)
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-20
Electron and Hole Concentrations
Remember: the closer E
f
moves up to N
c
, the larger n is;
the closer E
f
moves down to E
v
, the larger p is.
For Si, N
c
= 2.8
10
19
cm
-3
and N
v
= 1.04
10
19
cm
-3
.
kT E E
c
f c
e N n
/ ) (
=
2 3
2
2
2
(
h
kT m
N
n
c
t
kT E E
v
v f
e N p
/ ) (
=
2 3
2
2
2
(
h
kT m
N
p
v
t
N
c
is called the effective
density of states (of the
conduction band) .
N
v
is called the effective
density of states of the
valence band.
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-21
1.8.2 The Fermi Level and Carrier Concentrations
kT E E
c
f c
e N n
/ ) (
=
( ) ( ) eV 6 14 . 0 10 / 10 8 . 2 ln 026 . 0 ln
17 19
= = = n N kT E E
c f c
( ) ( ) eV 31 . 0 10 / 10 04 . 1 ln 026 . 0 ln
14 19
= = = p N kT E E
v v f
E
c
E
f
E
v
0.146 eV
(a)
0.31 eV
E
c
E
f
E
v
(b)
Where is E
f
for n =10
17
cm
-3
? And for p = 10
14
cm
-3
?
Solution: (a)
(b) For p = 10
14
cm
-3
, from Eq.(1.8.8),
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-22
1.8.2 The Fermi Level and Carrier Concentrations
10
13
10
14
10
15
10
16
10
17
10
18
10
19
10
20
E
v
E
c
N
a
or N
d
(cm
-3
)
kT E E
c
f c
e N n
/ ) (
=
( ) n N kT E E
c c f
ln =
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-23
1.8.3 The np Product and the Intrinsic Carrier Concentration
In an intrinsic (undoped) semiconductor, n = p = n
i
.
kT E
v c i
g
e N N n
2 /
=
2
i
n np =
kT E E
c
f c
e N n
/ ) (
=
kT E E
v
v f
e N p
/ ) (
=
and
Multiply
kT E
v c
kT E E
v c
g
v c
e N N e N N np
/
/ ) (
= =
n
i
is the intrinsic carrier concentration, ~10
10
cm
-3
for Si.
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-24
Question: What is the hole concentration in an N-type semiconductor
with 10
15
cm
-3
of donors?
Solution: n = 10
15
cm
-3
.
After increasing T by 60C, n remains the same at 10
15
cm
-3
while p
increases by about a factor of 2300 because .
Question: What is n if p = 10
17
cm
-3
in a P-type silicon wafer?
Solution:
EXAMPLE: Carrier Concentrations
3 - 5
3 15
-3 20
2
cm 10
cm 10
cm 10
= ~ =
n
n
p
i
kT E
i
g
e n
/ 2
3 - 3
3 17
-3 20
2
cm 10
cm 10
cm 10
= ~ =
p
n
n
i
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-25
EXAMPLE: Complete ionization of the dopant atoms
N
d
= 10
17
cm
-3
. What fraction of the donors are not ionized?
Solution: First assume that all the donors are ionized.
Probability of not
being ionized
04 . 0
2
1
1
1
2
1
1
1
meV 26 / ) meV ) 45 146 ((
/ ) (
=
+
=
+
e e
kT E E
f d
Therefore, it is reasonable to assume complete ionization, i.e., n = N
d
.
meV 146 cm 10
3 17
= = =
c f d
E E N n
E
c
E
f
E
v
146 meV
E
d
45meV
1.9 General Theory of n and p
~
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-26
2
i
n np =
d a
N p N n + = + Charge neutrality:
2 / 1
2
2
2 2
(
(
+
|
.
|
\
|
+
=
i
d a d a
n
N N N N
p
2 / 1
2
2
2 2
(
(
+
|
.
|
\
|
+
=
i
a d a d
n
N N N N
n
1.9 General Theory of n and p
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-27
I. (i.e., N-type)
If ,
II.
(i.e., P-type)
If ,
a d
N N n =
n n p
i
2
=
i a d
n N N >>
a d
N N >>
d
N n =
d i
N n p
2
= and
i d a
n N N >> d a
N N p =
p n n
i
2
=
d a
N N >>
a
N p =
a i
N n n
2
= and
1.9 General Theory of on n and p
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-28
EXAMPLE: Dopant Compensation
What are n and p in Si with (a) N
d
= 610
16
cm
-3
and N
a
= 210
16
cm
-3
and (b) additional 610
16
cm
-3
of N
a
?
(a)
(b) N
a
= 210
16
+ 610
16
= 810
16
cm
-3
> N
d
3 16
cm 10 4
= =
a d
N N n
3 3 16 20
2
cm 10 5 . 2 10 4 / 10 /
= = = n n p
i
3 16 16 16
cm 10 2 10 6 10 8
= = =
d a
N N p
3 3 16 20
2
cm 10 5 10 2 / 10 /
= = = p n n
i
+ + + + + +
. . . . . .
. . . . . . . . . . .
N
d
= 610
16
cm
-3
N
a
= 210
16
cm
-3
n = 410
16
cm
-3
+ + + + + +
- - - - - - - -
. . . . . .
. . . . . .
N
d
= 610
16
cm
-3
N
a
= 810
16
cm
-3
p = 210
16
cm
-3
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-29
1.10 Carrier Concentrations at Extremely High
and Low Temperatures
intrinsic regime
n = N
d
freeze-out regime
l
n
n
1/T
High
temp
Room temp Cryogenic temp
kT E
v c i
g
e N N n p n
2 /
= = =
kT E E
d c
d c
e
N N
n
2 / ) (
2 / 1
2
(
=
high T:
low T:
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-30
I nfrared Detector Based on Freeze-out
To image the black-body radiation emitted by tumors
requires a photodetector that responds to hvs around 0.1 eV.
In doped Si operating in the freeze-out mode, conduction
electrons are created when the infrared photons provide the
energy to ionized the donor atoms.
photon
E
c
E
v
electron
E
d
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 1-31
1.11 Chapter Summary
Energy band diagram. Acceptor. Donor. m
n
, m
p
.
Fermi function. E
f
.
kT E E
c
f c
e N n
/ ) (
=
kT E E
v
v f
e N p
/ ) (
=
a d
N N n =
d a
N N p =
2
i
n np =