Jaeger/Blalock

7/1/03
Microelectronic Circuit Design
McGraw-Hill
Chapter 14
Single-Transistors Amplifiers
Microelectronic Circuit Design
Richard C. Jaeger
Travis N. Blalock
Chap 14 - 1
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Chapter Goals
Detailed study of three broad classes of amplifiers
Inverting amplifiers- that provide high voltage gain with a 180
0

phase shift, common-emitter and common-source configurations,
Followers- that provide nearly unity gain similar to op amp voltage
follower, common-collector and common-drain configurations,
Noninverting amplifiers- that provide high voltage gain with no
phase shift, common-base and common-gate configurations.
Detailed design of voltage gain, input voltage range, current gain, input
and output resistances, coupling and bypass capacitor design and lower
cutoff frequency for each type of amplifier.
Understand differences between SPICE ac (small-signal), transient
(large-signal) and transfer function analysis modes.
Chap 14 - 2
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Signal Injection and Extraction: BJT
In forward-active region,



To cause change in current, v
BE
= v
B
- v
E
must be changed.
Base or emitter terminals are used to inject signal because
even if Early voltage is considered, collector voltage has
negligible effect on terminal currents.
Substantial changes in collector or emitter currents can
create large voltage drops across collector and emitter
resistors and collector or emitter can be used to extract
output. Since i
B
is a factor of |
F
smaller than i
C
or i
E

currents, base terminal is not used to extract output.
|
|
|
.
|

\
|
|
|
|
.
|

\
|
=
=
T
V
BE
v
F
S
I
E
i
T
V
BE
v
S
I
C
i
exp
exp
o
|
|
|
.
|

\
|
=
T
V
BE
v
FO
S
I
B
i exp
|
Chap 14 - 3
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Signal Injection and Extraction: FET
In pinch-off region,



To cause change in current, v
GS
= v
G
- v
S
must be changed.
Gate or source terminals are used to inject signal because
even with channel-length modulation, drain voltage has
negligible effect on terminal currents.
Substantial changes in drain or source currents can create
large voltage drops across drain and source resistors and
drain or source can be used to extract output. Since i
G
is
always zero, gate terminal is not used to extract output.
2
2
|
|
.
|

\
|
= =
TN
V
GS
v
n
K
D
i
S
i
Chap 14 - 4
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Amplifier Families
Constraints for signal injection and extraction yield three families of
amplifiers
Common-Emitter (C-E)/Common- Source (C-S)
Common-Base (C-B)/Common- Gate (C-G)
Common-Collector (C-C)/Common- Drain (C-D)
All circuit examples here use the four-resistor bias circuits to establish
Q-point of the various amplifiers
Coupling and bypass capacitors are used to change the ac equivalent
circuits.
Chap 14 - 5
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Common-Emitter
and Common-Source Circuits
AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier
Chap 14 - 6
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Terminal Voltage
Gain
Using test source v
b
to drive the base
terminal of the transistor, neglecting
r
o
,
E
R
m
g
L
R
m
g
A
CE
vt
E
R
o m
g
o
L
R
o
b
v
o
v
vt
A
+
=
+ +
= =

1
) 1 ( / | |
|
1 >>
o
| Assuming
For C-S Amplifier, take limit of voltage
gain of C-E amplifier as
and


If R
E
and R
S
are set to zero, the voltage
gain has an upper bound of



If R
E
and R
S
are large, the voltage gain
has a lower bound of


t
r
t
| r
m
g
o
=
S
R
m
g
L
R
m
g
A
CS
vt
+
=
1
CC
V
A
CE
vt
L
R
m
g
A
CS
vt
A
CE
vt
10 ~
= ~
DD
V
A
CS
vt
~
R
L
R
A
CS
vt
A
CE
vt
= =
R is the unbypassed
resistor in the
emitter or source.
Chap 14 - 7
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Input Signal Range
For small-signal operation, magnitude of v
be
developed across r
t
in small-
signal model must be less than 5 mV.


If , v
b
can be increased beyond 5 mV limit.

In case of FET, magnitude of v
gs
must be less than 0.2(V
GS
- V
TN
).


Presence of R
S
increases permissible value of v
g



t
t
r
E
R
E
R
m
g
r
+ +
= =
1
b
v
i
be
v
V ) 1 ( 005 . 0 1 005 . 0
E
R
m
g
o
E
R
E
R
m
g
b
v + ~ + + s
|
|
|
|
.
|

\
|
|
|
|
|
.
|

\
|
|
1 >>
E
R
m
g
) ( 2 . 0
1
TN
V
GS
V
S
R
m
g
g
v
gs
v s
+
=
) 1 )( ( 2 . 0
S
R
m
g
TN
V
GS
V
g
v + s
Chap 14 - 8
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Condition for g
m
R
>>1
This condition simplifies the gain expression and is used to stabilize
voltage gain, achieve high input and output resistances and increase
input signal range.
For BJT:



For MOSFET:
V 025 . 0
1
=
>> ~ =
E
R
E
I
T
V
E
R
E
I
T
V
E
R
C
I
E
R
m
g
2
1
2
TN
V
GS
V
S
R
D
I
TN
V
GS
V
S
R
D
I
S
R
m
g

=
>>

=
Chap 14 - 9
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Input Resistance
and Overall Voltage Gain
Input resistance looking into the base
terminal is given by



For C-S Amplifier,
) 1 (
) 1 (
E
R
m
g r
R
CE
in
E
R
o
r
i
b
v
R
CE
in
+ + ~
+ + = =
t
|
t

t
r
=
R
CS
in
(
(
(
(
(

|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
+
=
= = =
R
CE
in
B
R
I
R
R
CE
in
B
R
A
CE
vt
i
v
b
v
A
CE
vt
i
v
b
v
b
v
o
v
i
v
o
v
A
CE
v
Overall voltage gain is





For C-S Amplifier,
(
(
(
(
(

+
=
G
R
I
R
G
R
A
CS
vt
A
CS
v
Chap 14 - 10
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Voltage Gain
Calculations (Example)
Problem: Find overall voltage gain.
Given data: Q-point values and values for R
I
, R
1
, R
2
, R
3
, R
7
,for both
BJT and FET as well as values for R
E
and R
S
.
Assumptions: Small-signal operating conditions.
Analysis: For C-E Amplifier,
k 18 k 100 k 22
7
3
k 313 k 3 (101) k 160 ) 1 (
k 104 k 300 k 160
2
1
= = =
= + = + + =
= = =
|
.
|

\
|
R R
L
R
E
R
m
g r
R
CE
in
R R
B
R
t
75 . 5
k 313
) k 18 ( 100
= = =
R
CE
in
L
R
o
A
CE
vt
|
61 . 5 =
+
=
(
(
(
(
(

|
|
.
|

\
|
R
CE
in
B
R
I
R
R
CE
in
B
R
A
CE
vt
A
CE
v
Chap 14 - 11
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Voltage Gain
Calculations (Example contd.)
Analysis: For C-S Amplifier,
k 18 k 100 k 22
7
3
k 892 M 2 . 2 .5M 1
2
1
= = =
= = =
R R
L
R
R R
G
R
46 . 4
) k 2 ( mS) 491 . 0 ( 1
) k 18 ( mS) 491 . 0 (
1
=
+
= =
+
S
R
m
g
L
R
m
g
A
CS
vt
45 . 4 =
+
=
(
(
(
(
(

G
R
I
R
G
R
A
CS
vt
A
CS
v
Chap 14 - 12
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Output Resistance
0 i
x
i 0 i
0
e
v 0
) 1 (
1
e
v
i ) 1 (
e
v
= = =
= =
+
+
+
+ =

|
|
|
|
.
|

\
|
o
r
th
R
E
R
o
E
R
o
|
t
|
|
t
r
th
R +
=
e
v -
i
But R
out
= r
o
when R
E
= 0, not infinite.
Now, we also include r
o
in our analysis.
= =
x
i
x
v
out
R
|
|
|
|
.
|

\
|
|
|
.
|

\
|
|
|
.
|

\
|
+ +
+ ~
+ +
=
+ =
+ = + =
t
|
t
t
|
r
th
R
E
R
E
R
o
o
r R
r
th
R
E
R
E
R
E
R r
th
R
o
r
o
1
out
x
i i
x
i
e
v
e
v ) i
x
i (
e
v
r
v
x
v
Chap 14 - 13
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Output Resistance
(contd.)
t
| r
m
g
o
= Assuming and , with


.for

Finite current gain of BJT places an upper limit on size of output
resistance. r
t
appears in parallel with R
E
if R
th
is neglected. If we let R
E
be
infinite, maximum value of output resistance is

Output resistance of C-S amplifier is given by,
th
R
E
R r >> + ) (
t
E
R
o
r >>
) (
out
) ( ) ( 1
out
E
R r
f
R
E
R r
f
o
r
E
R r
m
g
o
r R
t

t
~
+ = + ~

|
|
.
|

\
|
1 ) ( >>
E
R r
m
g
t
o
r
o
R ) 1 (
out
+ = |
|
|
.
|

\
|
+ =
S
R
m
g
o
r R 1
out
Chap 14 - 14
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Output Resistance
(Example)
Problem: Find output resistance.
Given data: Q-point values and values for R
I
, R
1
, R
2
, R
3
, R
7
,for both
BJT and FET as well as values for R
E
and R
S
.
Assumptions: Small-signal operating conditions. Small -signal values
are known.
Analysis: For C-E Amplifier,



For C-S Amplifier,
4.55M
k 3 k 2 . 10 k 96 . 1
k 3 100(
1 k 219 1
out
=
+ +
+ =
+ +
+ =
(
(

|
|
|
|
.
|

\
|
t
|
r
th
R
E
R
E
R
o
o
r R
k 442 k 2 0.491mS) ( 1 k 223 1
out
= + = + =
(

|
.
|

\
|
|
|
.
|

\
|
S
R
m
g
o
r R
Chap 14 - 15
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Current Gain
Terminal current gain is the ratio of the current delivered to the load
resistor to the current being supplied to the base terminal.
o
A
CE
it
| =
=
A
CS
it
Chap 14 - 16
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Inverting Amplifiers: Summary
C-E and C-S amplifiers have similar voltage gains.
C-S amplifier provides extremely high input resistance but that of C-E is also
substantial due to the
f
R
E
term.
Output resistance of C-E amplifier is much higher than that of C-S amplifier as

f
is much larger for BJT than for FET.
Input signal range of C-E amplifier is also higher than that of C-S amplifier.
Current gains of both are identical to those of individual transistors.
Following transformation is used to simplify circuit analysis by absorbing R
E

(or R
S
) into the transistor (For FET, current gain and input resistance are
infinite).
E
R
m
g
m
g
m
g
+
=
1
'
) 1 ( '
E
R
m
g r r + =
t t
) 1 ( '
E
R
m
g
o
r
o
r + =
o
r
m
g
o
|
t
| = = ' ' '
f
o
r
m
g
f
= = ' ' '
Chap 14 - 17
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Common-Collector
and Common-Drain Amplifiers
AC equivalent for C-C Amplifier AC equivalent for C-D Amplifier
Chap 14 - 18
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Terminal Voltage
Gain
Neglecting r
o
,
L
R
m
g
L
R
m
g
A
CC
vt
L
R
o
r
L
R
o
b
v
o
v
vt
A
+
~
+ +
+
= =

1
) 1 (
) 1 (
|
t
|
1 >>
o
|
Assuming
For C-S Amplifier, take limit of voltage
gain of C-E amplifier as
and



In most C-C and C-D amplifiers,


Output voltage follows input voltage,
hence theses circuits are called
followers. BJT gain is closer to unity
than FET. Mostly,
r
o
can be neglected as gain<<
f



t
r
t
| r
m
g
o
=
L
R
m
g
L
R
m
g
A
CD
vt
+
+ =
1
1 = ~
A
CD
vt
A
CC
vt
1 75 . 0 s s
vt
A
1 >>
L
R
m
g
Chap 14 - 19
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Input Signal Range
For small-signal operation, magnitude of v
be
developed across r
t
in small-
signal model must be less than 5 mV.


If , v
b
can be increased beyond 5 mV limit.Since only small
portion of input signal appears across base-emitter or gate-source terminals,
followers can be used with relatively large input signals without violating
small-signal limits.
In case of FET, magnitude of v
gs
must be less than 0.2(V
GS
- V
TN
).

t
t
r
L
R
L
R
m
g
r
+ +
= =
1
b
v
i
be
v
V ) 1 ( 005 . 0 1 005 . 0
L
R
m
g
o
L
R
L
R
m
g
b
v + ~ + + s
|
|
|
|
.
|

\
|
|
|
|
|
.
|

\
|
|
1 >>
L
R
m
g
) ( 2 . 0
1
TN
V
GS
V
L
R
m
g
g
v
gs
v s
+
=
) 1 )( ( 2 . 0
L
R
m
g
TN
V
GS
V
g
v + s
Chap 14 - 20
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Input Resistance and
Overall Voltage Gain
Input resistance looking into the base
terminal is given by



For C-S Amplifier,
L
R
o
r
i
b
v
R
CC
in
) 1 ( + + = = |
t

t
r
=
R
CD
in
(
(
(
(
(

|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
+
=
= = =
R
CC
in
B
R
I
R
R
CC
in
B
R
A
CE
vt
i
v
b
v
A
CC
vt
i
v
b
v
b
v
o
v
i
v
o
v
A
CC
v
Overall voltage gain is





For C-S Amplifier,
(
(
(
(
(

+
=
G
R
I
R
G
R
A
CD
vt
A
CC
v
Chap 14 - 21
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Voltage Gain
Calculations (Example)
Problem: Find overall voltage gain.
Given data: Q-point values and values for R
I
, R
1
, R
2
, R
4
, R
7
,for both
BJT and FET.
Assumptions: Small-signal operating conditions.
Analysis: For C-C Amplifier,
k 117 ) k 2 . 10 ( 101 k 2 . 10 ) 1 (
k 5 . 11
7
4
k 104
2
1
= + = + + =
= =
= =
L
R
o
r
R
CE
in
R R
L
R
R R
B
R
|
t
991 . 0
k 117
) k 5 . 11 ( 101
) 1 (
= =
+
=
R
CC
in
L
R
o
A
CC
vt
|
956 . 0 =
+
=
(
(
(
(
(

|
|
.
|

\
|
R
CC
in
B
R
I
R
R
CC
in
B
R
A
CC
vt
A
CC
v
Chap 14 - 22
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Voltage Gain
Calculations (Example contd.)
Analysis: For C-D Amplifier,
k 7 . 10
7
4
892k
2
1
= =
= =
R R
L
R
R R
G
R
840 . 0
) k 7 . 10 ( mS) 491 . 0 ( 1
) k 7 . 10 ( mS) 491 . 0 (
1
=
+
= =
+
L
R
m
g
L
R
m
g
A
CD
vt
838 . 0 =
+
=
(
(
(
(
(

G
R
I
R
G
R
A
CD
vt
A
CD
v
Chap 14 - 23
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Output Resistance
1 1 1
x
v
x
v
i i
x
i
+
+
+
=
+
+
~
+

+
= =
|
|
|
|
|
.
|

\
|
o
th
R
o
r
o
r
th
R
R
CC
out
r
th
R
o
r
th
R
o
| |
t
|
t
t
|
t
|
1
1
1 +
+ ~
+
+ =
o
th
R
m
g
o
th
R
m
g
o
R
CC
out
| |
o
In case of FET,
Thus equivalent resistance looking into
emitter or source of a transistor is
approximately 1/ g
m
.
m
g
R
CD
out
1
=
Current is injected
into emitter of BJT.
1
i
i
e
v
+
+ =
o
th
R
m
g
o
|
o
Current o
o
i coming out of collector must
be supported by v
eb
= o
o
i/g
m
, given by
first term. i
b
=-i/|
o
+1creates voltage
drop in R
th
given by second term
Chap 14 - 24
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Output Resistance
(Example)
Problem: Find output resistance.
Given data: Q-point values and values for R
I
, R
1
, R
2
, R
4
, R
7
,for both
BJT and FET.
Assumptions: Small-signal operating conditions. Small -signal values
are known.
Analysis: For C-C Amplifier,



For C-D Amplifier,
O = + =
+
+ = 120
101
k 96 . 1
mS 80 . 9
990 . 0
1
1
o
th
R
m
g
R
CC
out
|
k 04 . 2
mS 91 . 4
1 1
= = =
m
g
R
CD
out
Chap 14 - 25
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Current Gain
Terminal current gain is the ratio of the current delivered to the load
resistor to the current being supplied from the Thevenin source.
1
i
1
i
+ = =
o
A
CC
it
|
=
A
CD
it
Chap 14 - 26
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Circuits: Summary
Both C-C and C-D amplifiers have voltage gains approaching unity.
C-D amplifier provides extremely high input resistance because of
infinite resistance looking into gate terminal of FET as compared to C-
C amplifier.
Output resistance of C-C amplifier is much lower than the C-D
amplifier due to higher transconductance of BJT than an FET for given
operating current.
Both C-C and C-D amplifiers can handle relatively large input signal
levels..
Current gains of FET is inherently infinite, whereas that of BJT is
limited by its finite value of |
o
.
Chap 14 - 27
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Common-Base
and Common-Gate Circuits
AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier
Chap 14 - 28
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Terminal
Voltage Gain and Input Resistance
Polarities of v
be
and dependent
current source g
m
v
be
are both
reversed, signal source is
transformed to its Norton
equivalent r
o
is neglected.
L
R
m
g
e
v
o
v
A
CB
vt
+ = =
For C-S Amplifier, take limit of voltage
gain of C-E amplifier as



t
r
L
R
m
g
A
CG
vt
+ =
m
g
o
r
i
e
v
R
CB
in
1
1
~
+
= =
|
t
m
g
R
CG
in
1
=
Chap 14 - 29
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Input Signal
Range



For small-signal operation,

In case of FET,



Relative size of g
m
and R
I
determine signal-handling limits.


|
|
|
|
|
.
|

\
|
+
+
=
4
4
)
4
( 1
i
v
eb
v
R
I
R
R
R
I
R
m
g
V ) 1 ( 005 . 0
I
R
m
g
b
v + s
) 1 )( ( 2 . 0
I
R
m
g
TN
V
GS
V
i
v + s
) 1 (
eb
v
i
v
I
R
m
g + = for R
I
>> R
4
.
) 1 (
sg
v
i
v
I
R
m
g + =
Chap 14 - 30
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Overall
Voltage Gain
|
|
|
|
|
.
|

\
|
(
(
(
(
(

|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
|
|
|
|
.
|

\
|
+
+
=
+
= = =
4
4
)
4
( 1
4
4
R
I
R
R
R
I
R
m
g
L
R
m
g
R
CB
in
R
I
R
R
CB
in
R
A
CB
vt
i
v
e
v
e
v
o
v
i
v
o
v
A
CB
v
Overall voltage gain is




For C-S Amplifier,


For R
I
>> R
4
,
|
|
|
|
|
.
|

\
|
+
+
=
4
4
)
4
( 1
R
I
R
R
R
I
R
m
g
L
R
m
g
A
CG
v
I
R
m
g
L
R
m
g
A
CG CB
v
+
~
1
,
For ,


This is the upper bound on gain.

For ,
1 <<
I
R
m
g
L
R
m
g
A
CG
vt
+ =
L
R
m
g
A
CB
vt
+ =
1 >>
th
R
m
g
I
R
L
R
A
CG
vt
A
CB
vt
+ = =
r
o
can be neglected as gain<<
f

Chap 14 - 31
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Voltage Gain
Calculations (Example)
Problem: Find overall voltage gain.
Given data: Q-point values and values for R
1
, R
2
, R
3
, R
7
,for both BJT
and FET, R
I
=2 kO, R
4
=12 kO.
Assumptions: Small-signal operating conditions.
Analysis: For C-E Amplifier,



For C-S Amplifier,
k 18
7
3
102 / 1
= =
= ~
R R
L
R
m
g
R
CB
in
176 = + =
L
R
m
g
A
CB
vt
59 . 8
4
4
)
4
( 1
+ =
+
+
=
|
|
|
|
|
.
|

\
|
R
I
R
R
R
I
R
m
g
A
CB
vt
A
CB
v
k 18
7
3
= = R R
L
R
84 . 8 + = + =
L
R
m
g
A
CS
vt
k 04 . 2 / 1 = ~
m
g
R
CG
in
11 . 4
4
4
)
4
( 1
+ =
+
+
=
|
|
|
|
|
.
|

\
|
R
I
R
R
R
I
R
m
g
A
CG
vt
A
CG
v
Chap 14 - 32
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Output
Resistance
|
|
|
|
.
|

\
|
+
+ =
t
|
r
th
R
th
R
o
o
r
R
CB
out
1
Desired resistance is that looking into
collector with base grounded and resistor R
th

in emitter.
The redrawn equivalent circuit is same as
that for C-E amplifier except resistance in
base is zero and resistance in emitter is
relabeled as R
th
.


Using
t
| r
m
g
o
=
) ( ) ( 1
th
R r
f
th
R r
m
g
o
r
R
CG
out
R
CB
out
t

t
~ + ~ =
|
|
.
|

\
|
Chap 14 - 33
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Current Gain
Terminal current gain is the ratio of the current delivered to the load
resistor to the current being supplied to the base terminal.
1
e
i
1
i
+ ~ + =
o
A
CB
it
o
1 + =
A
CG
it
Chap 14 - 34
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Noninverting Amplifiers: Summary
C-B and C-G amplifiers have similar voltage and current gains.
Numerical differences occur due to difference in parameter values of
BJT and FET at similar operating points.
C-B amplifier can achieve high output resistance due to higher
amplification factor of BJT.
C-B amplifier can more easily reach low levels of output resistance due
to higher transconductance of BJT for a given operating current.
Input signal range of C-G amplifier is inherently larger than that of C-B
amplifier.
Chap 14 - 35
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Selecting Amplifier Configuration
A single-transistor amplifier with a gain of 80 dB and input resistance of 100
kO.
A
v
= 10
80/20
= 10,000. For even best BJTs, gain<
f
= 40V
A
= 40(150) =
6000 and FET typically has much lower intrinsic gain. Hence such large
gain cant be achieved by single-transistor amplifier.
A single-transistor amplifier with gain of 52 dB, input resistance of 250 kO.
A
v
= 10
52/20
= 400. Since we need large gain and relatively large input
resistance, we can use C-E amplifier. A
v
= 20V
CC
, so, V
CC
=20 V.
which is small but acceptable.

For FET, even with small gate overdrive, V
DD
=100 V which is too large

A 10
5
10 5 . 2
) V 025 . 0 ( 100
k 250
|
t
=
O
s > =
C
I
C
I
T
V
o
r
Chap 14 - 36
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Selecting Amplifier Configuration
(contd.)
A single-transistor amplifier with gain of 30dB and input resistance of 5MO.
A
v
= 10
30/20
= 31.6. Since we need large input resistance and moderate
gain, we can use C-S amplifier.


Input resistance of can be set by our choice of gate-bias resistors. For C-
E amplifier, required high input resistance could be attained but values of
base bias resistor could be a limiting factor.
A single-transistor amplifier with gain of 0dB and input resistance of 20MO
with load resistor of 10kO.
Gain of 0 dB implies a source follower, R
in
=|
o
R
L
=100(10kO)=1MO, so
BJT cant meet input resistance requirement, A source follower can be
used easily.
30
V 5 . 0
= =

=
DD
V
TN
V
GS
V
DD
V
v
A
Chap 14 - 37
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design
Since impedance of a capacitor increases with decreasing frequency,
coupling and bypass capacitors reduce amplifier gain at low
frequencies.
To choose capacitor values, short-circuit time constant method is used:
each capacitor is considered separately with all other capacitors
replaced by short circuits.
To neglect a capacitor, the magnitude of capacitive impedance must be
much smaller than the equivalent resistance appearing at its terminals.
Chap 14 - 38
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-E and C-S Amplifiers
R
CE
in
B
R
in
R =
For C-E amplifier,
R
CE
out
R
out
R
3
=
For C-S amplifier,
R
CS
in
G
R
in
R = R
CS
out
R
out
R
3
=
For coupling capacitor C
1
,

For coupling capacitor C
3
,

e is chosen to be lowest frequency
for which midband operation is
needed in given application.
|
|
.
|

\
|
+
>>
in
R
I
R
C
e
1
1
|
|
.
|

\
|
+
>>
out
R R
C
7
1
3
e
Chap 14 - 39
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-E and C-S Amplifiers (contd.)
In this case, we can neglect impedances
of capacitors C
1
and C
3
, the find the
equivalent resistance looking up into
emitter or source of amplifier.
|
|
|
|
|
.
|

\
|
|
|
|
|
.
|

\
|
+
>>
m
g
E
R R
C
1
6
1
2
e
|
|
|
|
|
.
|

\
|
|
|
|
|
.
|

\
|
+
>>
m
g
S
R R
C
1
6
1
2
e
Chap 14 - 40
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-E and C-S Amplifiers (Example)
Problem: Choose values of coupling and bypass capacitors.
Given data: f = 1000Hz, values of all resistors and input and output
resistances for both C-E and C-S amplifiers.
Analysis:
For C-E amplifier:
k 1 . 78 = =
R
CE
in
B
R
in
R
F 02 . 0
1
1.99nF
1
1

e
= =
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
F 0.68
2
nF 2 . 67
) / 1 (
6
1
2

e
=
=
+
>>
|
|
.
|

\
|
|
|
.
|

\
|
C
m
g
E
R R
C
F 015 . 0
3
nF 31 . 1
7
1
3

e
= =
+
>>
|
|
.
|

\
|
C
out
R R
C
For C-S amplifier:
k 892 = =
G
R
in
R
pF 1800
1
178pF
1
1
= =
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
e
F 0.56
2
nF 3 . 55
) / 1 (
6
1
2

e
=
=
+
>>
|
|
.
|

\
|
|
|
.
|

\
|
C
m
g
S
R R
C
F 015 . 0
3
nF 31 . 1
7
1
3

e
= =
+
>>
|
|
.
|

\
|
C
out
R R
C
Chap 14 - 41
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-C and C-D Amplifiers
R
CC
in
B
R
in
R =
For C-E amplifier,
R
CC
out
R
out
R
4
=
For C-S amplifier,
R
CS
in
G
R
in
R =
R
CD
out
R
out
R
4
=
For coupling capacitor C
1
,


For coupling capacitor C
3
,


|
|
.
|

\
|
+
>>
in
R
I
R
C
e
1
1
|
|
.
|

\
|
+
>>
out
R R
C
7
1
3
e
Chap 14 - 42
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-C and C-D Amplifiers (Example)
Problem: Choose values of coupling and bypass capacitors.
Given data: f = 1000Hz, values of all resistors and input and output
resistances for both C-E and C-S amplifiers.
Analysis:
For C-C amplifier:
k 5 . 95 = =
R
CC
in
B
R
in
R
pF 8200
1
816pF
1
1
=
=
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
e
pF 8200
3
pF 795
7
1
3
=
=
+
>>
|
|
.
|

\
|
C
out
R R
C
e
For C-D amplifier:
k 892 = =
G
R
in
R
pF 1000
1
89pF
1
1
=
=
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
e
pF 8200
3
pF 782
7
1
3
=
=
+
>>
|
|
.
|

\
|
C
out
R R
C
e
O = = 120
4
R
CC
out
R
out
R
O = = k 74 . 1
4
R
CD
out
R
out
R
Chap 14 - 43
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-B and C-G Amplifiers
R
CB
in
R
in
R
4
=
For C-E amplifier,
R
CB
out
R
out
R
3
=
For C-S amplifier,
R
CG
in
R
in
R
4
=
R
CG
out
R
out
R
3
=
For coupling capacitor C
1
,


For coupling capacitor C
3
,


|
|
.
|

\
|
+
>>
in
R
I
R
C
e
1
1
|
|
.
|

\
|
+
>>
out
R R
C
7
1
3
e
Chap 14 - 44
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-B and C-G Amplifiers (contd.)
In this case, we can neglect impedances
of capacitors C
1
and C
3
, the find the
equivalent resistance looking up into
emitter or source of amplifier.
2
1
)
4
)( 1 (
2
1
R R
R
CG
eq
I
R R
o
r R R
R
CB
eq
=
+ + =
(
(

|
t
R
CG CB
eq
C
,
1
2
e
>>
Chap 14 - 45
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design:
C-B and C-G Amplifiers (Example)
Problem: Choose values of coupling and bypass capacitors.
Given data: f = 1000Hz, values of all resistors and input and output
resistances for both C-E and C-S amplifiers.
Analysis:
For C-B amplifier:
100 k 102 k 13
4
= = =
R
CB
in
R
in
R
F 82 . 0
1
75.8nF
1
1

e
= =
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
F 015 . 0
3
nF 31 . 1
7
1
3

e
= =
+
>>
|
|
.
|

\
|
C
out
R R
C
k 9 . 21 M 93 . 3 k 22
3
= = =
R
CB
out
R
out
R
| |
F 0.027 nF 38 . 2
)
4
)( 1 (
2 1
1
2

|
t
e
= =
+ +
>>
|
|
.
|

\
|
I
R R
o
r R R
C
Chap 14 - 46
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitor Design: C-
B and C-G Amplifiers (Example contd.)
For C-G amplifier:
k 74 . 1 k 04 . 2 k 12
4
= = =
R
CG
in
R
in
R
F 42 . 0
1
42.6nF
1
1

e
= =
+
>>
|
|
.
|

\
|
C
in
R
I
R
C
F 015 . 0
3
nF 31 . 1
7
1
3

e
= =
+
>>
|
|
.
|

\
|
C
out
R R
C
k 9 . 20 k 410 k 22
4
= = =
R
CG
out
R
out
R
pF 1800 pF 178
2 1
1
2
= = >>
|
|
.
|

\
|
R R
C
e
Chap 14 - 47
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Lower Cutoff Frequency of an Amplifier
We can choose capacitor values to set the lower cutoff frequency of the
amplifier at desired value.
Pole associated with a capacitor occurs at the frequency at which
capacitive reactance is equal to resistance at the capacitor terminals.
In discussed amplifiers, there are several poles and a bandwidth
shrinkage occurs at low frequencies.
A transfer function with n identical poles at e
o
is given by



Lower cutoff frequency is higher than frequency corresponding to
individual poles.
n
o
n
A j T
|
|
|
.
|

\
|
+
=
2 2
mid
) (
e e
e
e
1
/ 1
2
2
mid
) (

= =
n
o
L
A
L
j T
e
e e
Chap 14 - 48
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Dominant Pole Design
Instead of having the lower cutoff frequency set by the interaction of
several poles, it can be set by the pole associated with just one of the
capacitors. The other capacitors can be chosen to have their pole
frequencies much below f
L
.
Capacitor associated with emitter or source part of the circuit tends to
be the largest due to low resistance presented by emitter or source
terminal of transistor and is commonly used to set f
L
.
Values of other capacitors are increased by a factor of 10 to push their
corresponding poles to much lower frequencies.
Chap 14 - 49
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Design Example
Problem: Design an amplifier with given specifications.
Given data: A
v
>0.95, R
in
>20MO, R
out
<3 kO.
Analysis: Gain is approximately unity, high input resistance is
required, relatively low load resistance implies that low output
resistance is required. Se we can choose between emitter or source-
follower configurations.
Emitter followers input resistance is
limited by |
o
R
L
and current gain |
o

required to meet the input resistance
specification with given load resistance
is > 6600 (beyond range of normal
BJTs). So we choose source-follower
configuration.
Chap 14 - 50
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Design Example (contd.)
M 22 = =
G
R
in
R
Tolerance of 5% is included.
Now,
L
R
D
I
n
K
L
R
m
g
L
R
m
g
L
R
m
g
2
19
19 95 . 0
1
>
> >
+
k 3 k 3 s =
S
R
L
R
We choose R
L
=1.5 kO
mA 96 . 8 >
D
I
n
K
GS
V
S
R
D
I
SS
V
TN
V
GS
V
n
K
D
I
+ =
=
|
|
.
|

\
|
2
2
We can choose I
D
= 5
mA with K
n
=20mA/V
2

to give V
SS
=16.7+ V
TN.

If we choose a MOSFET
with V
TN
= 1.5 V,
V 21 . 2 =
GS
V
k 3 >
S
R
Chap 14 - 51
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Follower Design Example (contd.)
V
SS
=16.7+ V
TN.
gives a lower bound. If
we choose V
SS
= 20 V, R
S
=3.56 kO .
To choose V
DD
:


For small-signal operation,


If we choose V
DD
=1.2 V, small-signal
criteria are fulfilled and MOSFET stays
saturated for all signals.
V 5 . 1 = >
> +
S
v
TN
V
S
v
DD
V
TN
V
GS
V
S
v
GS
V
DD
v
V 7 . 2 ) 19 )( 71 . 0 ( 2 . 0
1
) 1 ( 2 . 0
= s
+
+ s
|
|
.
|

\
|
L
R
m
g
L
R
m
g
L
R
m
g
TN
V
GS
V
gg
v
Coupling capacitors mustnt affect
circuit at frequencies > 50 Hz.




Choose C
1
=1500 pF and C
2
=10 F.
pF 145
1
M 22
1
) Hz 50 ( 2
1
>> s C
C t
F 03 . 1
2
k 097 . 3
2
) Hz 50 ( 2
1

t
>> s C
C
4 . 69
1
= =
m
g
S
R
out
R
Chap 14 - 52
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Source Amplifier Design
Example
Problem: Design an amplifier with given specifications.
Given data: A
v
> 50, R
in
= 75O, f >500 kHz.
Analysis:Moderate input resistance of C-E and C-S amplifiers can be
limited by reducing sizes of bias resistors (called swamping of
impedance level). JFET is chosen over BJT due to its better signal
handling capability and simple bias circuit design.


To deliver overall gain of 50, amplifier
must deliver a gain of 100.
We can choose V
DD
=20 V
and V
GS
- V
P
= 0.2 V

2 75 75
75
i
v
i
v
G
R
I
R
G
R
i
v
gs
v =
O + O
O
=
+
=
P
V
GS
V
DD
V
v
A

=
Chap 14 - 53
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Source Amplifier Design
Example (contd.)
k 100
k 100
=
=
D
R
D
R
L
R
I
D
of 0.2 mA in R
D
= 100 kO needs a
voltage drop equal to total power
supply of 20 V. So power supply
voltage must be increased.
For pinch-off region operation,


Choose V
DD
= 25 V
O = = k 9
D
I
GS
V
S
R
V
GS
- V
P
must be small for high gain,
so JFET with large I
DSS
has to be
chosen for a reasonable I
D
. Choose
JFET with I
DSS
= 20 mA and V
P
=-2 V
mA 2 . 0
2
1 = =
|
|
|
|
|
.
|

\
|
P
V
GS
V
DSS
I
D
I
O = = k 50
m
g
v
2A
L
R
V 22 ) 2 ( ) 8 . 1 ( 8 . 1 20 > >
>
DD
V
DD
V
P
V
GS
V
S
R
D
I
D
R
D
I
DD
V
Chap 14 - 54
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Source Amplifier Design
Example (contd.)
Coupling capacitors mustnt affect
circuit at frequencies > 500 kHz.







Choose C
1
=0.022 F, C
2
=0.0068 F
and C
3
=20 pF
nF 12 . 2
1
150
1
) kHz 500 ( 2
1
>> s C
C t
pF 644
2
494
2
) kHz 500 ( 2
1
>> s C
C t
474
1
k 1 . 9 = =
m
g
eq
R
pF 59 . 1
3
k 200
3
) kHz 500 ( 2
1
>> s C
C t
Chap 14 - 55
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Source Amplifier with Body
Effect
S
R
mb
g
m
g
S
R )
bs
v
gs
v (
o
i
s
v + = =
s
v
bs
v =
s
v
g
v
gs
v =
th
v
) 1 ( 1
s
v
S
R
m
g
S
R
m
g
q + +
=
m
g
mb
g q =
g
v
) 1 ( 1
o
i
S
R
m
g
m
g
q + +
=
S
R
m
g
L
R
m
g
L
R
vt
A
) 1 ( 1
g
v
o
i -
g
v
o
v
q + +
= = =
gs
v ) 1 (
gs
v ) (
bs
v
gs
v i
q + =
+ = + =
m
g
mb
g
m
g
mb
g
m
g
|
|
.
|

\
|
+ + =
S
R
m
g
o
r
R
CS
out
) 1 ( 1 q
=
R
CS
in
=
A
CS
it
Chap 14 - 56
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Drain Amplifier with Body
Effect
g
v
) 1 ( 1
o
i
L
R
m
g
m
g
q + +
=
L
R
m
g
L
R
m
g
L
R
vt
A
) 1 ( 1
g
v
o
i
g
v
o
v
q + +
=
+
= =
) 1 (
1
q +
=
m
g
R
CD
out
=
R
CD
in
=
A
CD
it
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Common-Gate Amplifier with Body
Effect
L
R
m
g
A
CG
vt
) 1 ( q + + =
) 1 (
1
q +
=
m
g
R
CG
in
|
|
.
|

\
|
+ + = ) )( 1 ( 1
S
R
I
R
m
g
o
r
R
CG
out
q
Chap 14 - 58
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Results of Body Effect
Gain of C-G amplifier more closely approaches the R
L
/R
th
limit.
Gain of source follower is degraded.
Input resistance of C-G and output resistance of C-D amplifier is
lowered.
Output resistance of both C-S and C-G amplifiers is raised.
Body effect increases input signal range.
Chap 14 - 59