Jaeger/Blalock

2/9/04
Microelectronic Circuit Design
McGraw-Hill
Chapter 17
Frequency Response
Microelectronic Circuit Design
Richard C. Jaeger
Travis N. Blalock
Chap 17- 1
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Chapter Goals
Review transfer function analysis and dominant-pole approximations
of amplifier transfer functions.
Learn partition of ac circuits into low and high-frequency equivalents.
Learn short-circuit and open-circuit time constant methods to estimate
upper and lower cutoff frequencies.
Develop bipolar and MOS small-signal models with device
capacitances.
Study unity-gain bandwidth product limitations of BJTs and
MOSFETs.
Develop expressions for upper cutoff frequency of inverting, non-
inverting and follower configurations.
Explore gain-bandwidth product limitations of single and multiple
transistor circuits.

Chap 17- 2
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Chapter Goals (cont.)
Understand Miller effect and design of op amp frequency
compensation.
Develop relationship between op amp unity-gain frequency and slew
rate.
Understand use of tuned circuits to design high-Q band-pass
amplifiers.
Understand concept of mixing and explore basic mixer circuits.
Study application of Gilbert multiplier as balanced modulator and
mixer.
Chap 17- 3
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Transfer Function Analysis

A
v
(s)=
N(s)
D(s)
=
a
0
+a
1
s+a
2
s
2
+...+a
m
s
m
b
0
+b
1
s+b
2
s
2
+...+b
n
s
n
A
v
(s)= A
mid
F
L
(s)F
H
(s)
A
mid
is midband gain between upper
and lower cutoff frequencies.

F
L
(s)=
s+
Z1
L
e
|
\

|
.
| s+
Z2
L
e
|
\

|
.
| ... s+
Zk
L
e
|
\

|
.
|
s+
P1
L
e
|
\

|
.
| s+
P2
L
e
|
\

|
.
| ... s+
Pk
L
e
|
\

|
.
|
F
H
(s)=
1+
s
Z1
H
e
|
\


|
.
|
|
1+
s
Z2
H
e
|
\


|
.
|
|
...1+
s
Zl
H
e
|
\


|
.
|
|
1+
s
P1
H
e
|
\


|
.
|
|
1+
s
P2
H
e
|
\


|
.
|
|
...1+
s
Pl
H
e
|
\


|
.
|
|

F
H
( je) 1 for e<<e
Zi
H
, e
Pi
H
, i =1,l
A
L
(s)~ A
mid
F
L
(s)
F
L
( je) 1 for e>>e
Zj
L
, e
Pj
L
, j =1,k
A
H
(s)~ A
mid
F
H
(s)
Chap 17- 4
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Low-Frequency Response

F
L
(s)~
s
s+e
P2
e
L
~e
P2
Pole e
P2
is called the dominant low-
frequency pole (> all other poles) and
zeros are at frequencies low enough to
not affect e
L
.
If there is no dominant pole at low
frequencies, poles and zeros interact to
determine e
L
.

A
L
(s)= A
mid
F
L
(s)= A
mid
s+e
Z1
( )
s+e
Z2
( )
s+e
P1
( )
s+e
P2
( )
For e=e
L
s= je
L
|
\

|
.
| , A( je
L
) =
A
mid
2

1
2
=
e
L
2
+e
Z1
2
( )
e
L
2
+e
Z2
2
( )
e
L
2
+e
P1
2
( )
e
L
2
+e
P2
2
( )

1
2
=
1+
e
Z1
2
+e
Z2
2
( )
e
L
2
+
e
Z1
2
e
Z2
2
( )
e
L
4
1+
e
P1
2
+e
P2
2
( )
e
L
2
+
e
P1
2
e
P2
2
( )
e
L
4
Pole e
L
> all other pole and zero frequencies


In general, for n poles and n zeros,

e
L
~ e
P1
2
+e
P2
2
2e
Z1
2
2e
Z2
2

e
L
~ e
Pn
2
n
2 e
Zn
2
n

Chap 17- 5
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Transfer Function Analysis and
Dominant Pole Approximation Example
Problem: Find midband gain, F
L
(s) and f
L
for


Analysis: Rearranging the given transfer function to get it in standard form,
Now,



Zeros are at s = 0 and s = -100. Poles are at s = -10, s =-1000


All pole and zero frequencies are low and separated by at least a decade. Dominant pole is
at e = 1000 and f
L
= 1000/2t = 159 Hz. For frequencies > a few rad/s:

A
L
(s)=2000
s
s
100
+1
|
\


|
.
|
|
0.1s+1
( )
s+1000
( )

A
L
(s)=200
s s+100
( )
s+10
( )
s+1000
( )
F
L
(s)=
s(s+100)
(s+10)(s+1000)

A
L
(s)=A
mid
F
L
(s) A
mid
=200

f
L
=
1
2t
10
2
+1000
2
2 0
2
+100
2
|
\

|
.
|
=158 Hz

A
L
(s)~200
s
s+1000
( )
Chap 17- 6
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
High-Frequency Response

F
L
(s)~
s
1+
s
e
P3
|
\


|
.
|
|
e
H
~e
P3
Pole e
P3
is called the dominant high-
frequency pole (< all other poles).
If there is no dominant pole at low
frequencies, poles and zeros interact to
determine e
H
.

A
H
(s)= A
mid
F
H
(s)
A
H
(s)= A
mid
1+(s/e
Z1
)
( )
1+(s/e
Z2
)
( )
1+(s/e
P1
)
( )
1+(s/e
P2
)
( )
For e=e
H
s = je
H
|
\

|
.
| , A( je
H
) =
A
mid
2

1
2
=
1+(e
H
2
/e
Z1
2
)
( )
1+(e
H
2
/e
Z2
2
)
( )
1+(e
H
2
/e
P1
2
)
( )
1+(e
H
2
/e
P2
2
)
( )

1
2
=
1+
e
H
2
e
Z1
2
+
e
H
2
e
Z2
2
+
e
H
4
e
Z1
2
e
Z2
2
1+
e
H
2
e
P1
2
+
e
H
2
e
P2
2
+
e
H
4
e
P1
2
e
P2
2
Pole e
H
< all other pole and zero frequencies



In general,

e
H
~
1
1
e
P1
2
+
1
e
P2
2

2
e
Z1
2

2
e
Z2
2

e
H
~
1
1
e
Pn
2
n

2
1
e
Zn
2
n

Chap 17- 7
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct Determination of Low-Frequency
Poles and Zeros: C-S Amplifier


V
o
(s) = I
o
(s)R
3
=g
m
V
gs
(s)
R
D
R
3
+(1/sC
2
)+R
3
R
3
=g
m
(R
3
R
D
)
s
s+
1
C
2
(R
D
+R
3
)
V
gs
(s)
V
g
(s) =
s+C
1
R
G
s+C
1
(R
I
+R
G
)+1
V
i
(s)
V
gs
(s) =V
g
-V
s
=
s+(1/C
3
R
S
)
s+
1
C
3
(1/g
m
) R
S



(

(
V
g
(s)
A
v
( s )=
V
o
(s)
V
i
(s)
= A
mid
F
L
( s )
A
mid
=g
m
(R
3
R
D
)
R
G
R
G
+R
I
Chap 17- 8
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct Determination of Low-Frequency
Poles and Zeros: C-S Amplifier (cont.)
The three zero locations are: s = 0, 0, -1/(R
S
C
3
).
The three pole locations are:

Each independent capacitor in the circuit contributes one pole and one
zero. Series capacitors C
1
and C
2
contribute the two zeros at s = 0 (dc),
blocking propagation of dc signals through the amplifier. Third zero due
to parallel combination of C
3
and R
S
occurs at frequency where signal
current propagation through MOSFET is blocked (output voltage is zero).


F
L
(s) =
s
2
s+(1/C
3
R
S
)
|
\

|
.
|
s+
1
C
1
(R
I
+R
G
)
|
\



|
.
|
|
|
s+
1
C
3
(1/g
m
) R
S



(

(
|
\




|
.
|
|
|
|
s+
1
C
2
(R
D
+R
3
)
|
\



|
.
|
|
|

s=
1
C
1
(R
I
+R
G
)
,
1
C
3
(1/g
m
) R
S



(

(
,
1
C
2
(R
D
+R
3
)
Chap 17- 9
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Short-Circuit Time Constant Method to
Determine e
L
Lower cutoff frequency for a
network with n coupling and
bypass capacitors is given by:



where R
iS
is resistance at
terminals of ith capacitor C
i
with
all other capacitors replaced by
short circuits. Product R
iS
C
i
is
the short-circuit time constant
associated with C
i
.

e
L
~
1
R
iS
C
i
i =1
n

Midband gain and upper and lower

cutoff frequencies that define
bandwidth of amplifier are of more
interest than complete transfer function.
Chap 17- 10
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-E Amplifier

Using SCTC method for C
1
:
R
1S
= R
I
+(R
B
in
CE
R
)= R
2
+(R
B
r
t
)
For C
2
,
R
2S
= R
3
+(R
C
out
CE
R
)= R
3
+(R
C
r
o
)~ R
3
+R
C
For C
3
,
R
3S
= R
E
out
CC
R
= R
E
r
t
+R
th
|
o
+1
= R
E
r
t
+(R
I
R
B
)
|
o
+1
e
L
~
1
R
iS
C
i
i =1
3

Chap 17- 11
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-S Amplifier
Chap 17- 12
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-S Amplifier

Using the SCTC method for C
1
,
R
1S
= R
I
+(R
G
in
CS
R
)= R
S
+R
G
For C
2
,
R
2S
= R
3
+(R
D
out
CS
R
)= R
3
+(R
D
r
o
)
R
2S
~ R
3
+R
D
For C
3
,
R
3S
= R
S
out
CG
R
= R
S
1
g
m
Chap 17- 13
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-B Amplifier

Apply the SCTC method :
For C
1
,
R
1S
= R
I
+(R
E
in
CB
R
)= R
I
+(R
E
1
g
m
)
For C
2
,
R
2S
= R
3
+(R
C
out
CB
R
)~ R
3
+R
C
Chap 17- 14
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-G Amplifier
Chap 17- 15

Apply the SCTC method :
For C
1
,
R
1S
= R
I
+(R
S
in
CG
R
)= R
I
+(R
S
1
g
m
)
For C
2
,
R
2S
= R
3
+(R
D
out
CG
R
)~ R
3
+R
D
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-C Amplifier
Chap 17- 16

Apply the SCTC method :
For C
1
,
R
1S
= R
I
+(R
B
in
CC
R
)
R
1S
= R
I
+ R
B
r
t
+ |
o
+1
|
\

|
.
| R
E
R
3
|
\

|
.
|
|
\

|
.
|
For C
2
,
R
2S
= R
3
+(R
E
out
CC
R
)= R
3
+ R
E
r
t
+R
th
|
o
+1
|
\



|
.
|
|
|
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Estimate of e
L
for C-D Amplifier
Chap 17- 17

Apply the SCTC method :
For C
1
,
R
1S
= R
I
+(R
G
in
CD
R
)= R
I
+R
G
For C
2
,
R
2S
= R
3
+R
S
out
CD
R
= R
3
+R
S
1
g
m
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency-dependent Hybrid-Pi Model
for BJT
Capacitance between base and
collector terminals is:



C
o
is total collector-base junction
capacitance at zero bias, u
jc
is the
junctions built-in potential.

C

=
C
o
1+(V
CB
/|
jc
)
Capacitance between base and
emitter terminals is:



t
F
is the forward transit-time of the
BJT. C
t
appears in parallel with r
t
.
As frequency increases, for a given
input signal current, impedance of
C
t
reduces v
be
and thus reduces the
current in the controlled source at
transistor output.

C
t
=g
m
t
F
Chap 17- 18
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Unity-gain Frequency of BJT


I
c
(s) =(g
m
sC

)V
be
(s)
I
c
(s) =(g
m
sC

)I
b
(s)
r
t
s(C
t
+C

)r
t
+1
|(s)=
I
c
(s)
I
b
(s)
=
|
o
1
sC

g
m
|
\



|
.
|
|
|
s(C
t
+C

)r
t
+1
The right-half plane transmission zero e
Z
= +
g
m
/C

occurring at high frequency can be

neglected.


e
|
= 1/ r
t
(C

+ C
t
) is the beta-cutoff frequency


where

and f
T
= e
T
/2t is the unity gain-bandwidth
product. Above f
T
, the BJT has no current gain.

|(s)~
|
o
s(C
t
+C

)r
t
+1
=
|
o
(s/e
|
)+1

|(s)~
|
o
e
|
s+e
|
=
e
T
s+e
|

e
T
=|
o
e
|
=
|
o
(C
t
+C

)r
t
=
g
m
C
t
+C

Chap 17- 19
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Unity-gain Frequency of BJT (cont.)
Current gain is |
o
= g
m
r
t
at low
frequencies and has single pole roll-
off at frequencies > f
|
, crossing
through unity gain at e
T
. Magnitude
of current gain is 3 dB below its
low-frequency value at f
|
.

C
t
=
g
m
e
T
C

=
40I
C
e
T
C

Chap 17- 20
C
t
is calculated using
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
High-frequency Model of MOSFET


I
d
(s) =(g
m
sC
GD
)V
gs
(s)
I
d
(s) = I
b
(s)
(g
m
sC
GD
)
s(C
GS
+C
GD
)
|(s)=
I
d
(s)
I
g
(s)
=
e
T
s
1
s
e
T
1+(C
GS
/C
GD
)
|
\

|
.
|





(

(
(
(


e
T
=
g
m
C
GS
+C
GD
f
T
=

n
C
ox
"
W
L
V
GS
V
TN
( )
(2/3)C
ox
"
WL
=
3
2

n
V
GS
V
TN
( )
L
2
Chap 17- 21
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Limitations of High-frequency Models
Above 0.3 f
T
, behavior of simple pi-models begins to deviate
significantly from the actual device.
Also, e
T
depends on operating current as shown and is not constant as
assumed.
For given BJT, a collector current I
CM
exists that yields maximum
f
Tmax
.
For the FET in saturation, C
GS
and C
GD
are independent of Q-point
current, so

e
T
g
m
I
D
Chap 17- 22
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Effect of Base Resistance
on Midband Amplifiers
Base current enters the BJT through
external base contact and traverses a
high resistance region before entering
active area. r
x
models voltage drop
between base contact and active area
of the BJT.
To account for base resistance r
x
is absorbed
into equivalent pi model and can be used to
transform expressions for C-E, C-C and C-B
amplifiers.

i = g
m
v= g
m
r
t
r
t
+r
x
v
be
= g
m
'
v
be
g
m
'
= g
m
r
t
r
t
+r
x
=
|
o
r
t
+r
x
r
t
'
=r
t
+r
x
|
o
'
=|
o
Chap 17- 23
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct High-Frequency Analysis
C-E Amplifier
The small-signal model can be simplified by
using a Norton source transformation.

R
L
=R
3
R
C
=100kO4.3kO R
B
=R
1
R
2
=30kO10kO

v
th
=v
i
R
B
R
I
+R
B
|
\




|
.
|
|
|
|
R
th
=
R
I
R
B
R
I
+R
B
i
s
=
v
th
R
th
+r
x
r
to
=r
t
(R
th
+r
x
)
Chap 17- 24
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct High-Frequency Analysis
C-E Amplifier (Pole Determination)
From nodal equations for the circuit in
frequency domain,




High-frequency response is given by 2
poles, one finite zero and one zero at
infinity. Finite right-half plane zero, e
Z
=
+ g
m
/C

> e
T
can easily be neglected.
For a polynomial s
2
+ sA
1
+ A
0
with roots
a and b, a ~ A
1
and b ~ A
0
/A
1
.


V
2
(s) = I
s
(s)
(sC

- g
m
)
A
A= s
2
C
t
C

+C
L
|
\

|
.
|
+C
t
C
L
|
\

|
.
|
+s C
t
g
L
+C

g
L
+g

+g
t
|
\

|
.
|
+C
L
g
to
|
\

|
.
| +g
L
g
to

C
T
=C
t
+C

1+g
m
R
L
+
R
L
r
to
|
\



|
.
|
|
|
+C
L
R
L
r
to
e
P1
=
A
0
A
1
~
1
r
to
C
T
e
P2
~
g
m
C
t
1+(C
L
/C

)
|
\

|
.
|
+C
L
Smallest root that gives first pole limits
frequency response and determines e
H
.
Second pole is important in frequency
compensation as it can degrade phase
margin of feedback amplifiers.
Chap 17- 25
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct High-Frequency Analysis
C-E Amplifier (Overall Transfer Function)


V
o
(s) =
V
th
(s)
R
th
+r
x
(sC

- g
m
)
g
L
g
to
1+(s/e
P1
)
|
\

|
.
| 1+(s/e
P2
)
|
\

|
.
|
V
o
(s) =
V
th
(s)
R
th
+r
x
(g
m
R
L
r
to
)
1(s/e
Z
)
|
\

|
.
|
g
L
g
to
1+(s/e
P1
)
|
\

|
.
| 1+(s/e
P2
)
|
\

|
.
|
V
o
(s) ~-
V
th
(s)
R
th
+r
x
g
m
R
L
r
to
( )
1+(s/e
P1
)
|
\

|
.
|
A
vth
(s)=
V
o
(s)
V
th
(s)
~
A
mid
1+(s/e
P1
)
( )

A
mid
=
|
o
R
L
R
th
+r
x
+r
t
e
P1
=
1
r
to
C
T
Chap 17- 26
Dominant pole model at high
frequencies for C-E amplifier is as
shown.
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Direct High-Frequency Analysis
C-E Amplifier (Example)
Problem: Find midband gain, poles, zeros and f
L
.
Given data: Q-point = ( 1.60 mA, 3.00 V), f
T
= 500 MHz, |
o
= 100, C

= 0.5
pF, r
x
= 250O, C
L
= 0
Analysis: g
m
= 40I
C
= 40(0.0016) = 64 mS, r
t
= |
o
/g
m
=1.56 kO

C
t
=
g
m
2tf
T
C

=19.9 pF
R
L
= R
3
R
C
=100kO4.3kO= 4.12 kO
R
th
= R
B
R
I
= 7.5kO1kO=882 O
r
to
=r
t
(R
th
+r
x
)=656 O
C
T
=C
t
+C

1+g
m
R
L
+
R
L
r
to
|
\



|
.
|
|
|
+C
L
R
L
r
to
|
\



|
.
|
|
|
=156 pF

f
P1
=
1
2tr
to
C
T
=1.56 MHz
e
P2
=
1
R
L
C

g
m
C
t
1+
1
g
m
r
to
+
1
g
m
R
L
|
\



|
.
|
|
|
f
P2
=
e
P2
2t
=603 MHz f
Z
=
g
m
2tC

=20.4 GHz
A
vth
=
|
o
R
L
R
th
+r
x
+r
t
=153
Overall gain is reduced to -135 as v
th
= 0.882v
s
.
Chap 17- 27
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Gain-Bandwidth Product Limitations of
C-E Amplifier
If R
th
is reduced to zero in order to increase bandwidth, then r
to
would
not be zero but would be limited to approximately r
x
.



If R
th
= 0, r
x
<< r
t
so that r
x
= r
to
and

GBW = A
v
e
H
s
|
o
R
L
R
th
+r
x
+r
t
|
\



|
.
|
|
|
1
r
to
C
T
|
\



|
.
|
|
|

C
T
~C

(g
m
R
L
)


GBWs
1
r
x
C

Chap 17- 28
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
High-Frequency Analysis: C-S Amplifier

R
th
= R
I
R
G
R
L
= R
D
R
3
v
th
=v
i
R
G
R
I
+R
G
C
T
=C
GS
+C
GD
1+g
m
R
L
+
R
L
R
th
|
\



|
.
|
|
|
e
Z
=
g
m
C
GD
e
P1
=
1
R
th
C
T
e
P2
=
1
R
L
C
GD
g
m
C
GS
1+
1
g
m
R
th
+
1
g
m
R
L
|
\



|
.
|
|
|
Chap 17- 29
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Miller Multiplication

V
o
(s)=AV
1
(s) I
s
(s)=sCV
1
(s)V
o
(s)



(

(
Y(s)=
I
s
(s)
V
1
(s)
=sC(1+A)
Total input capacitance = C(1+A) because
total voltage across C is v
c
= v
i
(1+A) due to
inverting voltage gain of amplifier.
For the C-E amplifier,

C
T
=C
t
+C

(1+A)=C
t
+C

(1+g
m
R
L
)
Chap 17- 30
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Miller Integrator
Assuming zero current in input
terminal of amplifier,

V
1
V
in
R
=sC(V
in
V
o
)
V
o
=AV
in

A
v
(s)=
V
o
V
1
=
1
RC
|
\


|
.
|
|
A
1+A
s+
1
RC(1+A)
=
Ae
o
s+e
o

e
o
=
1
RC(1+A)
where

For frequencies >> e
o
, assuming A >> 1,


which is the transfer function of an
integrator.

A
v
(s)~
Ae
o
s
~
1
sRC
Chap 17- 31
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Open-Circuit Time Constant Method to
Determine e
H
At high frequencies, impedances of
coupling and bypass capacitors are small
enough to be considered short circuits.
Open-circuit time constants associated
with impedances of device capacitances
are considered instead.

e
H
~
1
R
io
C
i
i =1
m

where R
io
is resistance at terminals of
ith capacitor C
i
with all other
capacitors open-circuited.

For a C-E amplifier, assuming C
L
= 0

R
to
=r
to

R
o
=
v
x
i
x
=r
to
+(1+g
m
R
L
+
R
L
r
to
)
e
H
~
1
R
to
C
t
+R
o
C

=
1
r
to
C
T
Chap 17- 32
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Gain-Bandwidth Trade-off Using
Emitter Resistor

A
mid
=
|
o
R
L
R
th
+r
x
+r
t
+(|
o
+1)R
E
~
R
L
R
E

r
t
>>R
th
+r
x
for and
gain decreases as emitter resistance
increases and bandwidth of stage will
correspondingly increase.
To find bandwidth using OCTC method:

g
m
R
E
>>1

R
eq
=
v
x
i
x
=
R
th
+r
x
+R
E
1+g
m
R
E
R
to
=r
t
R
eq
~
R
th
+r
x
+R
E
1+g
m
R
E
Chap 17- 33
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Gain-Bandwidth Trade-off Using
Emitter Resistor (cont.)
Test source i
x
is first split into two
equivalent sources and then
superposition is used to find v
x
= (v
b
- v
c
).
Assuming that |
o
>> 1 and


R
th
+r
x
( )
<< r
t
+(|
o
+1)R
E
( )
R
o
=
v
x
i
x
=(R
th
+r
x
) 1+
g
m
R
L
1+g
m
R
E
+
R
L
R
th
+r
x
|
\


|
.
|
|

e
H
~
1
(R
th
+r
x
)
C
t
1+g
m
R
E
1+
R
E
R
th
+r
x
|
\



|
.
|
|
|
+C

1+
g
m
R
L
1+g
m
R
E
+
R
L
R
th
+r
x
|
\



|
.
|
|
|
|
\



|
.
|
|
|
Chap 17- 34
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Dominant Pole for C-B Amplifier


R
th
=R
E
R
I
R
L
=R
C
R
3
R
to
=r
t
v
x
i
x
=r
t
R
th
+r
x
1+g
m
R
th
~
R
th
+r
x
1+g
m
R
th
Using split-source transformation assuming
that |
o
>>1 and r
x
<< r
t

R
o
=
v
b
v
c
i
x
=r
x
1+
g
m
R
L
1+g
m
R
th
|
\


|
.
|
|
+R
L
e
H
~
1
r
x
C
t
1+g
m
R
th
1+
R
th
r
x
|
\



|
.
|
|
|
+C

1+
g
m
R
L
1+g
m
R
th
|
\



|
.
|
|
|





(

(
(
(
+C

R
L
Neglecting first term of order of 1/ e
T
, and since
last term is dominant:

e
H
~
1
C

R
L
Chap 17- 35
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Dominant Pole for C-G Amplifier

R
th
= R
4
R
I
R
L
= R
D
R
3
R
GSo
=
R
th
1+g
m
R
th
~
1
G
th
+g
m
R
GDo
= R
L
e
H
~
1
C
GS
G
th
+g
m
|
\



|
.
|
|
|
+C
GD
R
L
s
1
C
GD
R
L
Chap 17- 36
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Dominant Pole for C-C Amplifier

R
th
= R
B
R
I
R
L
= R
E
R
3
R
to
=r
t
v
x
i
x
=r
t
R
th
+r
x
+R
L
1+g
m
R
L
~
R
th
+r
x
+R
L
1+g
m
R
L
R
o
=(R
th
+r
x
)
in
CC
R
=(R
th
+r
x
) r
t
+(|
o
+1)R
L
( )
R
o
~(R
th
+r
x
)
e
H
~
1
(R
th
+r
x
+R
L
)
C
t
1+g
m
R
L
+(R
th
+r
x
)C

A better estimate is obtained if we set R

L
= 0
in the expression for R
to
.

e
H
~
1
(R
th
+r
x
)
C
t
1+g
m
R
L
+C

|
\



|
.
|
|
|
GBW =(1) e
H
|
\

|
.
| s
1
C

r
x
Chap 17- 37
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Dominant Pole for C-D Amplifier
Substituting r
t
as infinite and r
x
as
zero in the expression for the emitter
follower,

R
th
=R
G
R
I
R
L
=R
S
R
3

e
H
~
1
R
th
1+g
m
R
L
C
GS
+C
GD
R
th
=
1
R
th
C
GS
1+g
m
R
L
+C
GD
|
\



|
.
|
|
|
Chap 17- 38
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Differential Amplifier
Frequency Response
C
EE
is total capacitance at emitter node
of the differential pair.
Differential mode half-circuit is similar
to a C-E stage. Bandwidth is determined
by the product. As emitter is a
virtual ground, C
EE
has no effect on
differential-mode signals.
For common-mode signals, at very low
frequencies,

Transmission zero due to C
EE
is
T
C
o
r
t

A
cc
(0) ~
R
C
2R
EE
<<1

s=e
Z
=
1
C
EE
R
EE
Chap 17- 39
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Differential Amplifier
Frequency Response (cont.)
Common-mode half-circuit is similar to a
C-E stage with emitter resistor 2R
EE
.
OCTC for C
t
and C

is similar to the C-E

stage. OCTC for C
EE
/2 is:

R
EEO
=2R
EE
r
t
+r
x
|
o
+1
~
1
g
m
e
P
~
1
r
x
C
t
1+2g
m
R
EE
1+
2R
EE
r
x
|
\



|
.
|
|
|
+C

1+
g
m
R
C
1+2g
m
R
EE
+
R
C
r
x
|
\



|
.
|
|
|
|
\



|
.
|
|
|
+
C
EE
2g
m
As R
EE
is usually designed to be large,

e
P
~
1
C
t
+C
EE
2g
m
+C

(R
C
+r
x
)
~
1
C

(R
C
+r
x
)
Chap 17- 40
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Common-Collector/ Common-Base Cascade
R
EE
is assumed to be large and
neglected.



Sum of the OCTC of Q
1
is:

out
CC1
R
=
r
t1
+r
x1
|
o1
+1
~
1
g
m1
in
CB2
R
=
r
t2
+r
x2
|
o2
+1
~
1
g
m2

r
x1
C
t1
1+g
m1
1
g
m2
+C
1
|
\







|
.
|
|
|
|
|
|
|
=r
x1
C
t1
2
+C
1
|
\


|
.
|
|
Chap 17- 41
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Common-Collector/ Common-Base Cascade (cont.)
Sum of the OCTC of Q
2
is:





Combining the OCTC for Q
1
and Q
2
, and assuming that transistors
are matched,

r
x2
C
t2
1+g
m2
1
g
m1
+C
2
1+
g
m
R
C
1+g
m2
1
g
m1
|
\







|
.
|
|
|
|
|
|
|









(

(
(
(
(
(
(
(
+C
2
R
C
~r
x2
C
t2
2
+C
2
1+
g
m
R
C
2
+
R
C
r
x2
|
\



|
.
|
|
|





(

(
(
(

e
H
=
1
r
x
C
t
+C

2+
g
m
R
C
2
+
R
C
r
x
|
\



|
.
|
|
|





(

(
(
(
Chap 17- 42
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Cascode Amplifier
OCTC of Q
1
with load resistor 1/ g
m2
:



As I
C2
= I
C1
, g
m2
= g
m1
, gain of first stage is
unity. Assuming g
m2
r
to1
>>1,


OCTC of Q
1
, a C-B stage for r
o1
>> R
L
and

f
>>1:


Assuming matched devices,

R
to1
C
t1
+R
o1
C
1
=r
to1
C
T1
=r
to1
C
t1
+C
1
1+
g
m1
g
m2
+
1
g
m2
r
to1
|
\



|
.
|
|
|





(

(
(
(

r
to1
C
T1
~r
to1
C
t1
+2C
1
|
\

|
.
|

R
to2
C
t2
+R
o2
C
2
~
C
t2
g
m2
+(r
x2
+R
L
)C
2

e
H
=
1
r
to1
C
t
+2C

|
\

|
.
|
+ r
x
+R
L
|
\

|
.
| C

Chap 17- 43
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
MOS Current Mirror

r
to

1
g
m1
R
L
r
o2
C
t
C
GS1
+C
GS2
C

C
GD2

e
P1
~
1
2C
GS
g
m1
+2C
GD2
r
o2
|
\



|
.
|
|
|
~
1
2C
GD2
r
o2
For matched transistors,
Chap 17- 44
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Multistage Amplifier
Problem:Use open-circuit and short-circuit time constant methods to
estimate upper and lower cutoff frequencies and bandwidth.
Approach: Coupling and bypass capacitors determine low-frequency
response, device capacitances affect high-frequency response.





At high frequencies, ac model for multi-stage
amplifier is as shown.
Chap 17- 45
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Multistage Amplifier (Estimate of e
L
)
SCTC for each of the six independent coupling and bypass capacitors has
to be determined.


R
1S
= R
I
+(R
G
R
in1
)=10kO+1MO
R
1S
=1.01 MO
R
2S
= R
S1
1
g
m1
=200O
1
0.01S
=66.7 O
R
3S
= R
D1
R
O1
|
\

|
.
| + R
B2
R
in2
|
\

|
.
|
R
3S
= R
D1
r
o1
|
\

|
.
| + R
B2
r
t2
|
\

|
.
| =2.69 kO
R
th2
= R
B2
R
D1
r
o1
=571 O
R
4S
= R
E2
R
th2
+r
t2
|
o2
+1
=19.4 O


R
5S
= R
C2
R
O2
|
\

|
.
| + R
B3
R
in3
|
\

|
.
|
R
5S
= R
C2
r
o2
|
\

|
.
| + R
B3
r
t3
+(|
o3
+1)(R
E3
R
L
)
|
\

|
.
|
|
\

|
.
|
R
5S
=18.4 kO
R
th3
= R
B3
R
C2
r
o2
= 3.99 kO
R
6S
= R
L
+R
E3
R
th3
+r
t3
|
o3
+1
= 311 O
e
L
~
1
R
iS
C
i
i =1
n

= 3300 rad/s
f
L
=
e
L
2t
=530 Hz
Chap 17- 46
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Frequency Response
Multistage Amplifier (Estimate of e
H
)
OCTC for each of the two capacitors associated with each transistor has to
be determined.
For M
1
,



For Q
2
,

R
L1
=R
I12
r
t2
=478 O

R
th
C
T1
= R
th
C
GS1
+C
GD1
1+g
m1
R
L1
+
R
L1
R
th
|
\



|
.
|
|
|





(

(
(
(

R
th2
=R
I12
r
o1
=570 O

r
to2
=r
t2
(R
th2
+r
x2
)=610 O
R
L2
= R
I23
R
in3
|
\

|
.
|
R
L2
= R
I23
r
t3
+(|
o3
+1)(R
E3
R
L
)
|
\

|
.
|
|
\

|
.
|
R
L2
= 3.54 kO


r
to2
C
T2
=r
to2
C
t2
+C
2
1+g
m2
R
L2
+
R
L2
r
to2
|
\



|
.
|
|
|





(

(
(
(
r
to2
C
T2
=1.7410
7
s
For Q
3
,

R
th3
=R
I23
r
o2
=3.99 kO


R
t3O
C
t3
+R
3O
C
3
=
(R
th3
+r
x3
)
1+g
m3
R
EE
C
t3
+(R
th3
+r
x3
)C
3
R
t3O
C
t3
+R
3O
C
3
=1.5110
8
s
e
H
~
1
R
io
C
i
i =1
m

= 3.3810
6
rad/s
f
H
=
e
H
2t
=538 kHz
Chap 17- 47
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Single-pole Op Amp Compensation
Frequency compensation forces overall amplifier to have a single-pole
frequency response by connecting compensation capacitor around second gain
stage of the basic op amp.

A
v
(s)=
A
o
e
B
s+e
B
=
e
T
s+e
B
Chap 17- 48
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Three-stage MOS Op Amp Analysis
Input stage is modeled by its Norton
equivalent- current source G
m
v
dm
and output
resistance R
o
. Second stage has gain of
g
m5
r
o5
=
f5
and follower output stage is a
unity-gain buffer. V
o
(s) = V
b
(s) = - A
v2
V
a
(s)


A
v
(s)=
V
o
(s)
V
dm
(s)
=
-A
v2
V
a
(s)
V
dm
(s)
=
G
m
R
o
A
v2
1+sR
o
C
C
(1+A
v2
)
A
v
(s)=
e
T
s+e
B
=
A
o
e
B
s+e
B
e
B
=
1
R
o
C
C
(1+A
v2
)
e
T
=
G
m
A
v2
C
C
(1+A
v2
)
For large A
v2
, e
T
~
G
m
C
C
Chap 17- 49
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Transmission Zeros in FET Op Amps
Incorporating the zero determined by
g
m5
in the analysis,







This zero cant be neglected due to low
ratio of transconductances of M
2
and M
5.
Zero

can be canceled by addition of R
Z

=1/ g
m5
.

A
vth
(s)=(g
m5
r
o5
)
1(s/e
Z
)
( )
1+(s/e
P1
)
( )
e
Z
=
g
m5
C
C
+C
GD5
=e
T
g
m5
g
m2
e
P1
=
1
R
o
C
T
C
T
=C
GS5
+(C
C
+C
GD5
) 1+
f 5
+
r
o5
R
o
|
\



|
.
|
|
|

e
Z
=
1
(1/g
m5
)R
Z



(

(
C
C
Chap 17- 50
Note error
in Eq.
17.182.
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Bipolar Amplifier Compensation
Bipolar op amp can be compensated in
the same manner as a MOS amplifier
Transmission zero occurs at too high a
frequency to affect the response due to
higher transconductance of BJT that
FET for given operating current.



Unity gain frequency is given by:

e
Z
=
g
m5
C
C
=e
T
I
C5
I
C2

e
T
=
g
m2
C
C
=
40I
C2
C
C
=
20I
C1
C
C
Chap 17- 51
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Slew rate of Op Amp
Slew-rate limiting is caused by limited
current available to charge/discharge
internal capacitors. For very large A
v2
,
amplifier behaves like an integrator:




For CMOS amplifier,


For bipolar amplifier,

I
C1
~C
C
dv
B
(t)
dt
=C
C
dv
o
(t)
dt
SR=
dv
o
(t)
dt
max
=
I
1
C
C
=
e
T
G
m
/I
1
|
\



|
.
|
|
|

SR=
e
T
G
m
/I
1
|
\



|
.
|
|
|
=e
T
I
1
K
n2

SR=
e
T
G
m
/I
1
|
\



|
.
|
|
|
=
e
T
20
Chap 17- 52
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Tuned Amplifiers
Amplifiers with narrow bandwidth are often required in RF
applications to be able to select one signal from a large number of
signals.
Frequencies of interest > unity gain frequency of op amps, so active
RC filters cant be used.
These amplifiers have high Q (f
H
and f
L
close together relative to center
frequency)
These applications use resonant RLC circuits to form frequency
selective tuned amplifiers.
Chap 17- 53
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Single-Tuned Amplifiers
RLC network selects the
frequency, parallel combination
of R
D
, R
3
and r
o
set the Q and
bandwidth.



Neglecting right-half plane
zero,

A
v
(s)=
V
o
(s)
V
i
(s)
=
sC
GD
g
m
G
P
+s(C+C
GD
)+(1/sL)
G
P
= g
o
+G
D
+G
3

A
v
(s)= A
mid
s
e
o
Q
s
2
+s
e
o
Q
+e
o
2

e
o
=
1
L(C+C
GD
)
Q=e
o
R
P
(C+C
GD
)=
R
P
e
o
L
Chap 17- 54
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Single-Tuned Amplifiers (contd.)
At center frequency, s = je
o
,
A
v
= A
mid
.

A
mid
=g
m
R
P
=g
m
(r
o
R
D
R
3
)
BW =
e
o
Q
=
1
R
P
(C+C
GD
)
=
e
o
2
L
R
P
Chap 17- 55
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Use of tapped Inductor- Auto
Transformer
C
GD
and r
o
can often be small enough to
degrade characteristics of the tuned
amplifier. Inductor can be made to work
as an auto transformer to solve this
problem.

These results can be used to transform the
resonant circuit and higher Q can be
obtained and center frequency doesnt
shift significantly due to changes in C
GD
.
Similar solution can be used if tuned
circuit is placed at amplifier input instead
of output

V
o
(s)
I
2
(s)
=
nV
1
(s)
I
s
(s)/n
=n
2
V
1
(s)
I
s
(s)
Z
s
(s)=n
2
Z
p
(s)
Chap 17- 56
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Multiple Tuned Circuits
Tuned circuits can be placed at both input
and output to tailor frequency response.
Radio-frequency choke (an open circuit at
the operating frequency) is used for biasing.
Synchronous tuning uses two circuits tuned
to same center frequency for high Q.


Stagger tuning uses two circuits tuned to
slightly different center frequencies to
realize broader band amplifiers.
Cascode stage is used to provide isolation
between the two tuned circuits and
eliminate feedback path between them due
to Miller multiplication.

BW
n
=BW
1
2
1/ n
1
Chap 17- 57
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Mixers: Conversion Gain
Amplifiers discussed so far have always been assumed to be linear and gain
expressions involve input and output signals at same frequency.

Mixers are nonlinear devices whose output signal frequency is different from
the input signal frequency.

A mixers conversion gain is the ratio of phasor representation of output signal
to that of input signals, the fact that the two signals are at different frequencies
is ignored.

Chap 17- 58
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Single-Balanced Mixer
Eliminates one of the two input
signals from the output.
No signal energy appears ate
1
, but
e
2
appears in output spectrum, so
circuit is single-balanced.
Up-conversion uses component (e
2
-
e
1
) and down-conversion uses
(e
2
+e
1
) component.

i
EE
= I
EE
+I
1
sine
1
t
v
2
(t)=
4
nt n odd
sinne
2
t
V
o
(t)=
4
nt n odd

I
EE
R
C
sinne
2
t
+
I
1
R
C
2
cos(ne
2
e
1
)t
I
1
R
C
2
cos(ne
2
+e
1
)t
|
\




|
.
|
|
|
|
Chap 17- 59
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
Double-Balanced Mixer/ Modulator
The Gilbert Multiplier
Double-balanced mixers dont
contain spectral components at
either of the two input frequencies.




Modulator applications give double
sideband suppressed carrier output
signal. Amplitude-modulated signal
can also be obtained if


i
C1
=I
BB
+
V
m
2R
1
sine
m
t i
C2
=I
BB

V
m
2R
1
sine
m
t
v
o
(t)=V
m
R
C
R
1
4
nt
n odd

cos(ne
c
e
m
)t cos(ne
c
+e
m
)t
|
\

|
.
|

v
o
(t)=V
m
R
C
R
1
4
nt
n odd

sinne
c
t +
M
2
cos(ne
c
e
m
)t
M
2
cos(ne
c
+e
m
)t
|
\


|
.
|
|
v
1
=V
m
(1+Msine
m
t)
Chap 17- 60
Jaeger/Blalock
2/9/04
Microelectronic Circuit Design
McGraw-Hill
End of Chapter 17
Chap 17- 61