PACS IIDR

01/02 Mar 2001

Photoconductor Detector Arrays 1
Photoconductor
Detector Arrays for PACS

IIDR - ESTEC

Stefan Kraft ANTEC-GmbH Germany

Gnter Bollmann, Peter Dinges, Otto Frenzl, Marco Jasinski, Heidrun Kppen,
Heribert Krger, Claudia Popp


PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 2
Overview
Requirements & Specifications
Design Implications on Arrays
Mass Budget
Thermal Budget
Vibration Load
Stress Mechanism / FEM analysis
Fore Optics / Optical Design
Detection efficiency
Achieved Performance versa Spec
Detector Responsivity
Cutoff Wavelengths
Stress Uniformity / Variations in CW
Bias dependency
Uniformity of abs. Responsivity

Summary

PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 3
Impacts of Specifications and Requirements to Detector Array Design
# Item Specified Input parameters
1
Applicable
IR-flux range u (each pixel)


Transient behavior
1*10
-15
(dark) s u s 3*10
-12
W
nominal:
5*10
-15
W/pixel s u s 3*10
-12
W

< 100 ms

Telescope
Photoconductor, NEP
2 Mass s 5 kg Weight of materials
3 Thermal budget 600 / 800 W FEE support, harness suspension,
detector wires,
array suspension
4 Vibration load Input on
optical bench: 15 g
Critical items:
FEE and harness suspension
5 Mean
quantum efficiency

> 30 %
Detector material,
FEE, Cavity, Fore optics, Surfaces
6 Wavelength range high stress
(R > 0.1R
peak
)
110 208 m
7 Wavelength range low stress 60 130 m

Detector material,
applied stress
8 Current sensitivity high stress
(low stress)
> 10 A/W
(> 3 A/W)
Detector material,
cavity efficiency, fore optics
9 Uniformity
cutoff wavelengths

c
> 200 m
125 m <
c
< 130 m
(
c
: 50% of peak)
Detector material,
FEE, Cavity, Fore optics
10 Number of cycles >25 Design, gluing and coating techniques
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 4
Design Detector Housing
- 5x5 linear arrays arranged according to needs of acquisition
mode for spectroscopy
- Light metal design (Al) - total weight ~ 6.6 kg
- Thermally isolated
Front view Side view
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 5
Red array
Blue array
Design Detector Housing
- Optical path requires
different arrangements of
blue and red array


- Red array rotated by 90


- Detectors are optically
shielded from environment
by light tight envelopes


- Shielding structures
coated by black paint

PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 6

- Light weight
- FEE thermally isolated from array
- Thin wire harness
(Nano/micro connectors)
- High stability
- Proper wiring concept
(C
Det
< 2pF, dark current <510
4
e
-
/s)
- Low EMC impacts
- High degree of light tightness

- Good uniformity of responsivities
- Uniform cutoff wavelengths (CWs)
- Low variation of CWs

Design Detector Arrays
FEE
backside
Fore optic
light cones
Detector
stack in
cavity
Stress
screw
Leaf spring
Cooling
strip to
4 K level
Harness
wires
Micro
connector
Harness
wires
AWG 36
Nano
connector
Mounting
posts
(Kapton)
Detector AWG 40
wire channels
FEE
frontside
Bridging
substrates
Harness
substrate
- Proper stressing mechanism
- Low cross-talk (<0.1%)
- High collection efficiency
- High quantum efficiency
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 7
Design - Stress mechanism
Maximum force:
+ 800 N highly stressed
+ 200 N low stressed
+ Spring travel: ~2 mm
both types of modules
High stress module Low stress module
Al alloy with strength of steel
Design verified by FEM analysis
Detector cavity remains stress free
Controlled adjustment of stress possible
Stress is predictable even after cool down

PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 8
Mass Budget
Low Stress Array:
50 g
High Stress Array:
57 g
Harness: 3g
Fore Optics: 9g
FEE: 2g

25 Low Stress Arrays
1.24 kg
25 Low Stress Arrays
1.4 kg
50 Arrays
2.64 kg in Total
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 9
1.7 K
4 K
25 High Stress Arrays
P = 375 W
2.5 K
4 K
25 Low Stress Arrays
111666 DDDeeettteeeccctttooorrr WWWiiirrreeesss (((SSSttteeeeeelll))) 444 CCCRRREEE PPPooossstttsss +++222 HHHaaarrrnnneeessssss PPPooossstttsss (((KKKaaappptttooonnn))) 222 HHHaaarrrnnneeessssss PPPooossstttsss (((KKKaaappptttooonnn)))
P = 624 W
P = 11 W P = 202 W P = 162
W
P = 7 W P = 134 W P = 108 W
P = 249 W
Thermal Budget
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 10
Vibration Load
Static Load Test: 420 g @ RT on 2 posts ~ 200 g
Kompression
Bending
Safety Factor (Calculation): 5
Clamped Fixed
Clamped Fixed
Safety Factor (Calculation): 54
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 11
Design - FEM analysis
Addition of cushion pads between detector and pistons reduces the
pressure gradient considerably
High centring accuracy necessary
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 12
Photographs
Instrument Description
Schematic view of the linear
photoconductor array design
Mounting accuracy ~10 m
Slit size 30 to 70 m
Rotational mounting accuracy <5
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 13
Force transmittance from detector
to detector
Equalisation of non-parallel
surfaces
Minimisation of stress non-
uniformity within detectors
Optical shielding between the
cavities in the detector channel via
the metal contacts
Electrical insulation of the detector
contacts from the housing and each
other
Electrical contacts made by 70 m
Cu wires and 25 m Au wires in
cavity
Detector metal contact insulator ball joint metal contact
Block Design: Purposes
1 mm
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 14
Design - Fore optics
Low surface roughness (<0.3 m)
obtained by electric discharge
machining (EDM) for high reflectivity
Coating with a 10 m thick Ni-Au layer
ensures high reflectivity close to 1 as
proven by measurements on flat
samples
16 linear light cones
Optical cavities with
small apertures
Radial orientation to
pupil at 240 mm distance
Design optimised by optical
calculations
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 15
-0,5 0,0 0,5
0,4
0,5
0,6
0,7
0,8
0,9
1,0
R
e
l
.

s
p
a
t
i
a
l

d
i
s
t
r
i
b
u
t
i
o
n
y (mm)
Design impacts / biasing
concept:
Slits unavoidable
Polarisation dependence,
glancing angle of impinging
photon:
Effective slit size is small
Experimentally verified
by spectral responsivity

Performance Aspects - Photon Losses
y

Supported by ray tracing

Photon starting point:
240 mm from focus with
15 mm diameter
(conditions of the optics in
the instrument PACS)

High detection efficiency
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 16
q = P
abs
/(P
abs
+ P
loss
)
P
loss
: Loss area inside cavity = entrance hole + slits (25 m, 50 m) + wires
P
abs
= 2(a+b)h(1-R) q : Absorbing area
Abs. eff.: q = o L, Abs. coeff.: o = 2.4 cm
-1
, Abs. length: L = 2.1 mm
Length: a = width: b = 1 mm, height: h = 1.5 mm, Reflectivity: R = 0.4
D hole P hole P (1) P (2) P loss (1) P loss (2) P abs q q (1) q (2) Rel. Improvement
mm mm
2
mm
2
mm
2
mm
2
mm
2
%
0,5 0,196 0,927 0,467 1,199 0,740 1,80 0,90 0,60 0,71 0,15
0,55 0,238 0,927 0,467 1,240 0,781 1,80 0,88 0,59 0,70 0,15
0,6 0,283 0,927 0,467 1,286 0,826 1,80 0,86 0,58 0,69 0,15
0,65 0,332 0,927 0,467 1,335 0,875 1,80 0,84 0,57 0,67 0,15
0,7 0,385 0,927 0,467 1,388 0,928 1,80 0,82 0,56 0,66 0,14
0,75 0,442 0,927 0,467 1,445 0,985 1,80 0,80 0,55 0,65 0,14
0,8 0,503 0,927 0,467 1,505 1,046 1,80 0,78 0,54 0,63 0,14
0,85 0,567 0,927 0,467 1,570 1,111 1,80 0,76 0,53 0,62 0,14
0,9 0,636 0,927 0,467 1,639 1,180 1,80 0,74 0,52 0,60 0,13
0,95 0,709 0,927 0,467 1,712 1,252 1,80 0,72 0,51 0,59 0,13
1 0,785 0,927 0,467 1,788 1,329 1,80 0,70 0,50 0,58 0,13
1,05 0,866 0,927 0,467 1,869 1,409 1,80 0,68 0,49 0,56 0,13
Slit 1: 0,05 mm (plus wire holes) 0,08
Slit 2: 0,025 mm
Performance Aspects - Detector Efficiency
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 17
Measured Relative Responsivities
Good uniformity,
close to expectation

R ~ 20% @ 205 m
QM 13 - Low Stress
0 50 100 150
0,0
0,2
0,4
0,6
0,8
1,0
P14
P15
P16
P1
P2
P3
R
e
l
.

r
e
s
p
o
n
s
i
v
i
t
y
(m)
QM 2 - High Stress (re-stressed)
10 % level
2 4 6 8 10 12 14 16
190
195
200
205

C

(

m
)
Pixel position
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 18
Cutoff wavelengths and variations highly stressed QM arrays
Uniform mean cutoff wavelengths
Relation between R
RT
and CW (pressure)
Low variations within one array
0 2 4 6 8 10
195
200
205
FiFi
720 N/mm
2
On purpose
(760 N/mm
2
)
Mean

C
W

(

m
)
QM # - HS
1 2 3 4 5 6 7 8 9 10
0
5
10
15
Specification
PACS QM
FiFi
Variation of
cutoff wavelength
A

m
)
QM # - HS
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 19
Cutoff wavelengths and variations low stressed QM arrays
Uniform mean cutoff wavelengths Low variations within one array
12 14 16 18 20 22 24
122,5
125,0
127,5
130,0
132,5
Specif ication limits
Mean

C
W

(

m
)
QM # - LS
12 14 16 18 20 22 24
0
1
2
3
4
5
6
7
8
FO not optimised
Mean
Variation of
cutoff wavelength
A

m
)
QM # - LS
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 20
0 2 4 6 8 10
190
195
200
205
Min
Max

C
W

(

m
)
QM # - HS
Status Min-Max Cutoff Wavelengths QM arrays
12 14 16 18 20 22 24
125
130
135
Min
Max

C
W

(

m
)
QM # - LS
Initial specification limits
Specification limit FM:
CW
> 200 m @ 40 mV
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 21
Bias dependence QM 10 - Pixel 2
0 50 100 150 200 250 300
0,0
0,2
0,4
0,6
0,8
1,0
1,2
U15mV
U30mV
U43mV
U49mV
R
e
l
.

r
e
s
p
o
n
s
i
v
i
t
y
(m)
0 10 20 30 40 50 60
190
195
200
205
210
CWQM10

C

(

m
)
U
B
(mV)
Higher stress Higher CW Lower Bias Break Through Voltage
Higher Bias Higher CW
Lower stress means less risk of detector breakage
Specification close to optimum
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 22
Relative spectral responsivity - absolute uniformity
EM 6

TIA measurement ANTEC

T = 1.9 K

High stress (700 N)

U
bias
= 30 mV

EM 5

T = 2.5 K

Low stress (62 N)

U
bias
= 100 mV

0 50 100 150 200 250
0
2
4
6
8
10
12
Ideal responsivity
QE() = const
30% total
variation interval
P14
P15
P16
P1
P2
P3
P7
P8
P9
EM5.P7
R
e
s
p
o
n
s
i
v
i
t
y

(
A
/
W
)
(m)
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 23
Dependence of the DC signal (responsivity) on RT resistance
Measured detector output
signal U
DC
during operation as
a function of the RT resistance
of the Ge:Ga crystals - no
stress applied
U
DC
~ Current sensitivity
1/R ~ Doping density
280 300 320 340 360
0
1
2
3
QM1
QM2
QM3
Fit
U
DC
(V)
R (
O
)
FM LS FM HS
A linear fit derived from the
data points gives a slope of
-0.0339 V/O

Sensitivity increases with
decreasing resistance
Selection of crystals with
variation of less than 15 O (35O)
should give
less than 10% (25%) variation
within one array (whole array)
PACS IIDR
01/02 Mar 2001
Photoconductor Detector Arrays 24
-
# Item Specified Input parameters Achieved with EM/QM
Requirement fulfilled
1 Mass s 5 kg Materials < 1.5 kg per array
EM housing: 0.42 kg per array
( )
Housing not included
2 Thermal budget 600 / 800 W FEE support,
harness suspension,
detector wires,
array suspension

Design/analysis
~300 W per array

( )
Heat load
to housing not included
3 Vibration load Input on
optical bench: 15 g
Critical items:
FEE and harness
suspension

Design: 20g
safety factor >5
( ) - static
Vibration tests in prep
4 Wavelength range high stress
(R > 0.1Rpeak)
110 208 m 50 225 m ( )
5 Wavelength range low stress

60 130 m

Detector material,
applied stress
40 150 m ( )
6 Current sensitivity high stress
(low stress)
> 10 A/W
(> 3 A/W)
Detector material,
cavity efficiency, fore
optics
12 A/W
@ 40 mV bias
3.5 A/W
@ 100 mV bias
( )
Improved
Detector Material
for FM Arrays
7 Uniformity
cutoff wavelengths
c > 200 m
125 m < c < 130 m
(c: 50% of peak)
195 m < c < 200 m
125 m < c < 130 m
(c: 50% of peak)
( )
Goal FM: c = 205 m
@ 40 mV bias voltage
8 Uniformity of responsivity 30 % < 25% (ANTEC)
Verification at MPE/MPIA planned
( )
9 Mean quantum efficiency
( applicable flux range)
> 30 %


Detector material,
FEE, Cavity, Fore optics



Tests ANTEC, MPE:
~ 35%
Verification at MPIA planned
( )
10 Number of cycles >25 Adhesive, coating Several cool downs performed
during testing
TBC
Cycling test in prep

Summary: Specifications fulfilled