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Thyristors(SCRs)
OUTLINE
SCRconstructionandIVcharacteristics.
PhysicaloperationofSCRs.
SwitchingbehaviorofSCRs
dv/dtanddi/dtlimitationsandmethodsof
improvingthem.
SCRdrivecircuitconsiderations.
CopyrightbyJohnWiley&Sons2002
SCRs1
Thyristor(SCR)Geometry
Cathode
Gate
N+
J3
19
-3
10 cm
N+
P
17
-3
10 cm
10
13
10
J 2
N
19
-3
10 cm
14
- 5x10
cm-3
J1
17
10 cm -3
+
P
19
-3
10 cm
3050
Anode
Gateandcathodemetallizationfor
slow(phasecontrol)thyristor.
cathode
gate
Crosssectional
viewshowing
vertical
orientationof
SCR.
SCRswith
kiloampratings
havediameters
of10cmor
greater.
Gateandcathodemetallization
forfast(invertergrade)SCR
wafer
distributed
gate
wafer
CopyrightbyJohnWiley&Sons2002
cathode area
(metallization
not shown)
SCRs2
ThyristorIVCharacteristics
SCRtriggerablefromforwardblocking
statetoonstatebyagatecurrentpulse.
i
A
forward
on-state
I
-V
I
RW
M
i >0
G
Thyristorlatchesonandgatecannotturnit
off.ExternalcircuitmustforceSCRoff.
i
=0
BO
V
H
V
BO vAK
forward blocking
state
Thyristorcircuitsymbol.
+
i
A
VA
K
cathode
anode
i
gate
CopyrightbyJohnWiley&Sons2002
Currenttoseveral kiloampsforV(on)of2
4volts.
Blockingvoltagesto58kilovolts.
VBO=breakovervoltage;I BO =
breakovercurrent
VH=holdingvoltageI H=holdingcurrent
Maximumjunctiontemperature=125
.
SCRs3
SCRModelandEquivalentCircuit
OnedimensionalSCRmodel.
A
P
1
J
1
(N- )
N1
P
2
J
+
(N )
N2
Twotransistorequivalentcircuit
A
J
1
J
Q
1
Q
2
J
G
3
CopyrightbyJohnWiley&Sons2002
SCRs4
ThyristorTurnonProcess
A
Inforwardblockingstate,bothBJTsactive.
If
Q
1
p
1
J 1
J
J 3
+
+ + +
+
p
+
2
Holes attracted
by negative
charge of injected
electrons
J 2 depletion
width - no gate
current
J 2 depletion
width - with
gate current
Electrons
injected in
response to
gate current
flow
CopyrightbyJohnWiley&Sons2002
Q
2
Negativechargeofelectronssweptinton1
layerpartiallycompensatepositivecharge
ofionizeddonorsexposedbygrowthof
depletionofjunctionJ2.
Growthofdepletionreduceswidthof
basesofQnpnandQpnpandthus
increases
SCRs5
ThyristorOnstateLatchup
SCRwithnegativegatecurrent
Negativegatecurrentcauseslateralvoltage
dropsasindicatedwhichleadtocurrent
crowdingincenterofcathode.
K
Negative gate
current
N
+
P
N
ConventionalSCRs(phasecontrol)havelarge
areacathodesnegativegatecurrentcannot
removestoredchargefromcenteroflarge
cathodearea.
SCRstayslatchedoninspiteofnegativegate
current.
P
A
CopyrightbyJohnWiley&Sons2002
Externalcircuitmustforceanodecurrentto
negativevaluesinorderthatenoughstored
chargeberemovedfromSCRsothatitcan
turnoff.
SCRs6
ThyristorOnstateOperation
G
N
2
total
carrier
density
P
2
N
1
P
1
NA
1
1
D
2
N
A
2
N
D1
x
Onstate:allthreejunctionsforwardbiasedand BJTs
inequivalentcircuitsaturated.
Onstatestablebecausesaturated BJTshave
CopyrightbyJohnWiley&Sons2002
SCRs7
ThyristorTurnonBehavior
i (t)
G
T
A
v
A
v
TB
i (t)
A
di F
T
C
t
d(on)
Io
dt
Io
t
tr
tps
v (t)
AK
control
t
v
A
vB
td(on) =turnondelaytime;timerequiredforcharge
injectionbygatecurrenttomake
C
t
can be on
G
Delay or trigger angle
CopyrightbyJohnWiley&Sons2002
SCRs8
ThyristorTurnoffBehavior
diR
dt
iA (t)
I
t1
t2
t
3
V
REV
v (t)
AK
IR
Turnoffwaveforms
dvF
dt
t
recovery time t q
>t
3
SCRturnoffquitesimilartopowerdiodeturnoff.
Anodecurrentrateoffallcontrolledbyexternalinductance.
Reversevoltageovershootcausedbyexternalinductance.
JunctionJ1isblockingjunctioninreversebias.J3haslow
breakdownvoltage(2040volts)becauseoftheheavydopingon
bothsidesofthejunction.
CopyrightbyJohnWiley&Sons2002
SCRs9
Thyristordi/dtLimitatTurnon
i
N2
N2
P2
i (t)
G
N
1
P1
i
t
A
SCRfirstturnsonatcathodeperipherynearestgate.
Currentconstrictedtosmallareasduringinitialphasesofturn
on,td(on)andtr.
Useshapedgatecurrentpulsefor
rapidturnon.
Ifanodecurrentrateofrise,diF/dt,notkeptlessthansome
specifiedmaximum,currentdensityinconstrictedareawillbe
toolarge.
Localizedpowerdissipationtoohighandthermalrunaway
likely.
CopyrightbyJohnWiley&Sons2002
SCRs10
ThyristorReapplieddv/dtLimits
dv F
dt
v (t)
AK
RemovalofallstoredchargeinSCRrequiresa
minimumtimetq.
VF
t
REV
ApplicationofpositivedVF/dtlargerthanaspecified
valuebeforetqresultsinapulseofpositiveanode
currentwhichmayproduceunintentionedturnonof
theSCR.
forward
recover
y
current
i (t)
A
Avoidanceofunintentionedturnonrequires
dVF/dt<dVF,max/dtandremaininginreversebias
foraminimumtimetq.
A
dv
I
F
BO
<
dt
dv
j2
F
100 V/
Rateeffect
j2
max
dt
max
CopyrightbyJohnWiley&Sons2002
SCRs11
MethodsofImprovingThyristordi/dtRating
Interdigitatedgatecathodestructureusedtogreatly
increasegatecathodeperiphery.
distributed
gate
wafer
Distancefromperipherytocenterofanycathoderegion
significantlyshortened.
Abilityofnegativegatecurrenttobreaklatching
conditioninonstateincreased.
Combinationofpilotthyristor,diode,anditerdigitated
gatecathodegeometrytgermedagateassistedturnoff
thyristororGATT
cathode area
(metallization
not shown)
Useofpilotthyristortoincreaseturnongate
current tomainthyristor.
pilot
main
thyristor
thyristor
CopyrightbyJohnWiley&Sons2002
Largergatecurrentincreasesamountofinitial
conductingareaofcathodeandthusimprovesdiF/dt
capabiities.
Diodeallowesnegativegatecurrenttoflowfrom
mainSCR.
SCRs12
Improvementindv/dtRatingViaCathodeShorts
dv
CurrentthruCj2 indistinguishablefrompositivegatecurrentwith
respecttoturnonofSCR.
AK
C
A
j2
dt
IfcurrentthruCj2 bypassesjunctionJ3,thenSCRwillnotbe
turnedonbythelargedisplacementcurrents.
G
C
j2
J
3
Cathodeshortsprovidethisdesirablebypass.Mosteffectivewith
interdigitaatedgatecathodegeometry.
K
Cathode
shorting
cathode
structure
short
+
N
+
N
+
N
+
P
CopyrightbyJohnWiley&Sons2002
SCRs13
ThyristorGateTriggerRequirements
V
G
K
V
G
G
trigger
circuit load
line
maximum gate
power
dissipation
minimum
temperature
Equivalentcircuitof
SCRdrivecircuit
RG
maximum
temperature
I
minimum
trigger
current
I
G
2
G
1
V
G
R
GG
V +
G
G
IG
i (t)
G
SCRs14