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Silicon IC- Fabrication

Technology
To realize Semiconductor DEVICES or an
INTEGRATED CIRCUIT an adequate set of
technological steps is required that allows the
realization of the same on top surface/plane of a
semiconductor wafer.

Basic Steps of Si I.C-Fabrication:


1.
2.
3.
4.
5.

Chemical Cleaning of Silicon Wafer


Oxidation
Photolithography
Oxide Etching
Diffusion
Above steps are performed more than once depending on
complexity of the I.C being fabricated. Subsequently, following
steps are performed to accomplish the I.C fabrication.

6. Thin Film Metal Deposition


7. Photolithography
8. Metal etching
9. Annealing
10.Testing

P-N Junction Diode

Circuit symbol

Schematic diagram

p-type

net acceptor
concentration NA

n-type

net donor
concentration ND
cross-sectional area AD

ID

VD

Practical P-N Junction Diode Structure


ID
+ ID

metal
SiO2

For simplicity, assume that


the doping profile changes
abruptly at the junction.

VD

SiO2
p-type
P-typeSi
n-type Si

metal

Fabrication of Silicon P-N Junction Diode


1. Chemical cleaning of silicon wafer
2. Oxidation
3. Photolithography
4. Silicon oxide etching
5. Diffusion
6. Thin film Metal (Aluminium) Deposition
7. Photolithography
8. Metal Etching
9. Semiconductor-Metal contact formation

Process Flow Chart


for
Fabrication of P-N Junction
Si
n-Silicon
Chemically cleaned silicon wafer
SiO2

Silicon dioxide

Si

n-Silicon

Silicon-Oxide Interface

Silicon Wafer with a Grown Silicon dioxide layer


on top.

Silicon dioxide

Positive
Photo Resist Layer

n-Silicon
Spin Coat of Positive Photo Resist
Ultra Violet Rays
Glass plate
Emulsion
Silicon dioxide

Mask

U.V Exposed Region (Polymerized


Photo Resist)

n-Silicon
Photo Resist Polymerization on U.V Exposure

Silicon dioxide
Silicon
dioxide
n-Silicon

Windows in Photo Resist After Development

Silicon dioxide
Silicon
dioxide
n-Silicon

PR Coating on back of the wafer to protect oxide

Silicon dioxide

n-Silicon

Silicon Oxide ETCHING in BHF

Silicon dioxide

n-Silicon

After Photo Resist & Wax removal Removal

PRE DEPOSITION
Boron Atoms ambient
Silicon dioxide

Impurity Deposition (Boron/Phosphorous)

n-Silicon

Silicon dioxide

n-Silicon

Boro-silicate Glass and


BORON Atoms

After Etching in Glass Etchant:

Boron atoms
Silicon dioxide

n-Silicon

DRIVE - IN
Silicon dioxide
p

n-Silicon

Silicon dioxide
p

n-Silicon

Pre-deposited wafer heated at


High Temperature so impurity
Move into silicon.

Front coating photo


resist layer

Silicon dioxide
p

Back Oxide etching


BHF

Photo resist removal

n-Silicon

Silicon dioxide
p

n-Silicon

Dip in dil. HF to remove oxide if any on the front side and claen

Metal Contact Formation


Silicon dioxide
p

Aluminium Thin Film


Deposition

n-Silicon

Silicon dioxide
p

n-Silicon

Photo Resist
Aluminium
p

U. V Rays
Glass
Aluminium

Silicoon dioxide
p

Photoresist

P- Contact

n-Silicon

PHOTOLITHOGRAPHY FOR Metal Contacts

Silicon dioxide
p

n-Silicon

Development to remove U.V Exposed Photoresist

Silicon dioxide

n-Silicon
After Aluminium ETCHING

Silicon dioxide

n-Silicon
Metal Thin Film

Back Metal Contact Formation


p

One Diode Chip after separation


of diode

Diodes chips are


separated by scribing
using a diamond
point and packaged in a
suiatable package as
shown in the figure.

P-N Fabrication Training is Over

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