Ch.4 Lecture Slides For Chenming Hu Book: Modern Semiconductor Devices For ICs

Chapter 4 PN and Metal-Semiconductor Junctions
4.1 Building Blocks of the PN Junction Theory

V +
I
Donor ions
N
N-type
I
P-type
diode
symbol
V
Reverse bias
Forward bias
PN junction is present in perhaps every semiconductor device.

Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 4-1
4.1.1EnergyBandDiagramofaPNJunction
N-region
P-region
Ef
(a)
Ef is constant at
equilibrium
Ec
(b)
Ec
Ef
Ev
Ec and Ev are known

relative to Ef
Ev
Ec
Ef
Ev
(c)
Neutral
N-region
(d)
Depletion
layer
Neutral
P-region
Ec
Ef
Ev
Ec and Ev are smooth,

the exact shape to be
determined.
A depletion layer
exists at the PN
junction where n 0
and p 0.
Slide 4-2
4.1.2Built-inPotential
(a)
(b)
N-type
P-type
NNd d
NNa a
Ec
bi
Ef
Ev
bi
(c)
xN
xP
Can the built-in potential be measured with a voltmeter?

Slide 4-3
4.1.2Built-inPotential
N-region
n N d Nce
q A kT
kT N c
A
ln
q
Nd
ni
kT N c N a
q B kT
Nce
B
ln
P-region n
2
Na
q
ni
kT
bi B A
q
bi
N N
N
ln c 2 a ln c
Nd
ni
kT N d N a
ln
2
q
ni
Slide 4-4
4.1.3PoissonsEquation
Gausss Law:
a
ar e
s: permittivity (~12o for Si)

: charge density (C/cm3)
E(x)
E(x + x)
x
x
Poissons equation
Slide 4-5
4.2 Depletion-Layer Model

(a)
(b)
4.2.1FieldandPotentialintheDepletionLayer
P
N
N
d
N eut ra l Re gion
D eple tion La yer
xnN
N e utral R egi on
xpP
On the P-side of the

depletion layer, = qNa
d E qN a
s
dx
qNd
xpP
(c)
xnN
qN a
On the N-side, = qNd
(d)
E( x)
xnN
bi
(e)
qN a
qN a
(
x
)
x
C
( x P x)
E
1
s
s
x pP
qN d
( x - xN )
s
Slide 4-6
(a)
(b)
P
N
Nd
Na
N eut ra l Re gion
D eple tion La yer
xnN
N e utral R egi on
xpP
The electric field is continuous at x = 0.

qN
Nda |xP| = Nd|xP|
(c)
xp
Which side x
of the junction is depleted more? x
n
qN a
A one-sided junction is called a N+P junction or P+N junction

E
Slide 4-7
qNd
xp
(c)
x
x
qN
n
On the P-side,
(d)
xn
xp
Arbitrarily choose the

voltage at x = xP as V = 0.
bi
(e)
xnN
xpP
x
Ec
(f)
bi ,
qN a
V ( x)
( xP x ) 2
2 s
built-in potential
Ef
Ev
On the N-side,
qN d
V ( x) D
( x xN )2
2 s
qN d
bi
( x xN )2
2 s
Slide 4-8
(a)
Nd
Na
4.2.2Depletion-LayerWidth
(b)
N eut ra l Re gion
D eple tion La yer
xnN
N e utral R egi on
xpP
V is continuous at x = 0
xP x N Wdep
qN
d
If Na >> Nd , as in a P+N junction,
(c)
Wdep
2 sbi
xxn N
qN d
xp
qN a
What about a N+P junction? E
Wdep 2 s bi qN where
2 sbi
q
|x P||xN|N d
1
1
Na Nd
x
Na 0
1
1
1
1
N N d N a lighter dopant density
(d)
xn
xp
Slide 4-9
EXAMPLE: A P+N junction has Na=1020 cm-3 and Nd

=1017cm-3. What is a) its built in potential, b)Wdep , c)xN ,
and d) xP ?
Solution:
kT N d N a
10 20 1017 cm 6
a) bi
ln
0.026V ln
1V
2
20
6
q
ni
10 cm
2 sbi 2 12 8.85 10 1

19
17
qN d
1.6 10 10
14
b) Wdep
1/ 2
c)
x N Wdep 0.12 m
d)
xP x N N d N a 1.2 104 m 1.2 0

0.12 m
Slide 4-10
4.3 Reverse-Biased PN Junction

+
Ec
Ef
Ev
P
Ec
qbi
Ef
Ev
(a) V = 0
Ec
qbi + qV
Ec
Efn
qV
Ev
Efp
Ev
Wdep
2 s (bi | Vr |)
2 s potential barrier
qN
qN
1
1
1
1
N N d N a lighter dopant density
Does the depletion layer

widen or shrink with
increasing reverse bias?
(b) reverse-biased
Slide 4-11
4.4 Capacitance-Voltage Characteristics

N
Nd
Conductor
Na
Insulator
Conductor
Wde p
Reverse biased PN junction is

a capacitor.
Cdep
s
A
Wdep
Is Cdep a good thing?

How to minimize junction capacitance?
Slide 4-12
4.4 Capacitance-Voltage Characteristics

1/C dep 2
1
Cdep
Wdep
A 2 s
Capacitance data
2(bi V )
qN S A2
Slope = 2/qN sA2
bi
Increasing reverse bias
Vr
From this C-V data can Na and Nd be determined?

Slide 4-13
EXAMPLE: If the slope of the line in the previous slide is

2x1023 F-2 V-1, the intercept is 0.84V, and A is 1 m2, find the
lighter and heavier doping concentrations Nl and Nh .
Solution:
N l 2 /( slope q s A2 )
2 /(2 10 23 1.6 10 19 12 8.85 10 14 10 8 cm 2 )
6 1015 cm 3
q
0.84
kT N h N l
ni kTbi
10 20 0.026
18
3
bi
ln
1
.
8
10
cm
h
2
q
ni
Nl
6 1015
2
Is this an accurate way to determine Nl ? Nh ?

Slide 4-14
4.5 Junction Breakdown

I
Forward Current
V B, breakdown
voltage
Small leakage
Current
R
A
R
A
P N
C
3.7 V
Zener diode
B
IC
A Zener diode is designed to operate in the breakdown mode.

Slide 4-15
4.5.1PeakElectricField
N+
Na
0
Neutral Region
increasing
reverse bias
xp
(a)
E
Ep
increasing reverse bias
xp
2qN
Ep E(0) (bi | Vr |)
s
1/ 2
s Ecrit 2
bi
VB
2qN
(b)
Slide 4-16
4.5.2TunnelingBreakdown
Dominant if both sides of
a junction are very heavily
doped.
Filled States -
Empty States
Ec
Ev
JGe
H /
I
V
Ep Ecrit 10 V/cm
Breakdown
Slide 4-17
4.5.3AvalancheBreakdown
Ec
original
electron
Efp
Ev
impact ionization: an energetic

electron generating electron and
hole, which can also cause
impact ionization.
Impact ionization + positive
feedbackavalanche breakdown
s Ecrit 2
VB
2qN
electron-hole
pair generation
Ec
Efn
1
1
1
VB
N Na Nd
Slide 4-18
4.6 Forward Bias Carrier Injection

Forward biased
biased
Forward
VV=0
=0
I=0
Ec
qbi
Ef
Ev
P
-
Ec
qbi qV
Ef n
qV
Efp
Ev
Drift and diffusion cancel out
Minority carrier injection

Slide 4-19
4.6 Forward Bias

Quasi-equilibrium Boundary Condition
n ( xP ) N c e
( Ec E fn ) / kT
EEc c
Nce
( Ec E fp ) / kT ( E fn E fp ) / kT
nP 0 e
( E fn E fp ) / kT
nP 0 e
qV / kT
The minority carrier
Efnfnfn
EEfpfp
EEv v
xx
densities are raised

by eqV/kT
Which side gets more
carrier injection?
xN0 x0 P
N
Slide 4-20
4.6 Carrier Injection Under Forward Bias

Quasi-equilibrium Boundary Condition
qV
n(xP ) nP 0 e
p (xP) p N 0 e
kT
qV kT
ni qV
e
Na
kT
ni qV
e
Nd
n( xP ) n( xP ) nP 0 nP 0 (e qV
kT
kT
p( x N ) p ( x N ) p N 0 p N 0 (e qV
1)
kT
1)
Slide 4-21
EXAMPLE: Carrier Injection

A PN junction has Na=1019cm-3 and Nd=1016cm-3. The applied
voltage is 0.6 V.
Question: What are the minority carrier concentrations at the
depletion-region edges?
qV kT
10 e0.6 0.026 1011 cm -3
Solution: n( xP ) nP 0e
p( x N ) p N 0 e qV kT 10 4 e 0.6 0.026 1014 cm -3
Question: What are the excess minority carrier concentrations?

n( xP ) n( xP ) nP 0 1011 10 1011 cm -3
Solution:
p( x N ) p( x N ) p N 0 1014 10 4 1014 cm -3
Slide 4-22
4.7 Current Continuity Equation
Jp (x)
Jp ( x + x )
p
Volume = A x
J p ( x)
q
J p ( x x)
q
J p ( x x) J p ( x)
x
A x
p
q
q
dx
dJ p
Slide 4-23
4.7 Current Continuity Equation

p
q
dx
dJ p
d2p
p
qD p 2 q
dx
p
d p
p
p
2
2
dx
D p p L p
2
Minority drift current is
negligible;
Jp= qDpdp/dx
d 2 n n
2
2
dx
Ln
Lp and Ln are the diffusion lengths

L p D p p
Ln Dn n
Slide 4-24
4.8 Forward Biased Junction-- Excess Carriers
d 2 p
p
2
2
dx
Lp
xP
-x N
0
p() 0
p( x N ) p N 0 (e qV / kT 1)
x / Lp
x / Lp
p ( x) Ae
Be
p( x) p N 0 (e qV / kT 1)e
x xN / L p
, x xN
Slide 4-25
4.8 Excess Carrier Distributions

1.0
P-side
N-side
N a = 1017 cm -3
Nd = 2 1017 cm-3
0.5
nP ' ex /L n
3L n
2L n
Ln
pN ' ex /L p
0 L p 2L p 3L p 4Lp
x xN / L p
qV / kT
p ( x ) p N 0 (e
1)e
, x xN
n( x ) nP 0 (e qV / kT 1)e x xP / Ln , x xP
Slide 4-26
EXAMPLE: Carrier Distribution in Forward-biased PN Diode

N-type
Nd = 5 cm-3
Dp =12 cm 2/s
p = 1 s
P-type
Na = 101 7 cm -3
Dn=36.4 cm2 /s
n = 2 s
Sketch n'(x) on the P-side.

n( xP ) nP 0 (e qV
kT
ni
10 20 0.6 0.026
qV / kT
1)
(e
1) 17 e
1013 cm 3
Na
10
N-side
1013cm-3
P-side
n ( = p )
p ( = n ) 2
x
Slide 4-27
EXAMPLE: Carrier Distribution in Forward-biased PN Diode
How does Ln compare with a typical device size?

Ln Dn n 36 2 10 6 85 m
What is p'(x) on the P- side?
Slide 4-28
4.9 PN Diode I-V Characteristics

Jtotal
Jtotal
JnP
P-side
Jn = Jtotal Jp
Jp = Jtotal Jn
JnP
JpN
0
J pN
N-side
P-side
Dp
dp( x)
qD p
q
p N 0 (e qV
dx
Lp
J nP qDn
dn( x)
D
q n nP 0 (e qV
dx
Ln
kT
kT
JpN
x
N-side
1)e
x x N
1)e x xP
Lp
Ln
qV
Dp
Dn
Total current J pN ( xN ) J nP ( xP ) q
p q
nP 0 ( e
L N0
Ln
p
J at all x
kT
1)
Slide 4-29
The PN Junction as a Temperature Sensor
I I 0 (e qV
1)
D
n
I 0 Aqni
L N
p d Ln N a
2
kT
Dp
What causes the IV curves to shift to lower V at higher T ?

Slide 4-30
4.9.1ContributionsfromtheDepletionRegion
n p ni e qV / 2 kT
Net recombination (generation) rate :
ni qV / 2 kT
(e
1)
dep
I I 0 (e
I leakage I 0 A
qniWdep
dep
qV / kT
1) A
qniWdep
dep
(e qV / 2 kT 1)
Space-ChargeRegion(SCR)current
Underforwardbias,SCRcurrentisanextra
currentwithaslope120mV/decade
Slide 4-31
4.10 Charge Storage
1013 cm -3
N-side
QI
P-side
I Q s
n'
Q I s
x
What is the relationship between s (charge-storage time)

and (carrier lifetime)?
Slide 4-32
4.11 Small-signal Model of the Diode

I
1 dI
d
d
qV / kT
G
I 0 (e
1)
I 0 e qV / kT
R dV dV
dV
R
q
kT
I 0 (e qV / kT ) I DC /
kT
q
What is G at 300K and IDC = 1 mA?

Diffusion Capacitance:
dQ
dI
kT
C
s
sG s I DC /
dV
dV
q
Which is larger, diffusion or depletion capacitance?
Slide 4-33
Part II: Application to Optoelectronic Devices

4.12 Solar Cells
Solar Cells is also known

as photovoltaic cells.
Converts sunlight to
electricity with 10-30%
conversion efficiency.
1 m2 solar cell generate
about 150 W peak or 25 W
continuous power.
Low cost and high
efficiency are needed for
wide deployment.
Slide 4-34
4.12.1SolarCellBasics
I
ShortCircuit
light
Dark IV
Eq.(4.9.4)
sc
0
Ec
Ev
I
+
0.7V
Solar Cell
IV
Eq.(4.12.1)
sc
(a)
I I 0 (e qV
kT
Maximum
power-output
1) I sc
Slide 4-35
Direct-GapandIndirect-GapSemiconductors
Electrons have both particle and wave properties.
An electron has energy E and wave vector k.
direct-gapsemiconductor
indirect-gapsemiconductor
Slide 4-36
4.12.2LightAbsorption
Light intensity (x) e -x

(1/cm):absorption
coefficient
1/ :lightpenetration
depth
hc
Photon Energy (eV)
1.24
( m)
A thinner layer of direct-gap semiconductor can absorb most

of solar radiation than indirect-gap semiconductor. But Si
Slide 4-37
4.12.3 Short-Circuit Current and Open-Circuit Voltage
Jp (x)
Jp ( x + x )
p
Volume = A x
If light shines on the N-type

semiconductor and generates
holes (and electrons) at the
rate of G s-1cm-3 ,
d 2 p p G
2
2
dx
Lp Dp
If the sample is uniform (no PN junction),

d2p/dx2 = 0 p = GLp2/Dp= Gp
Slide 4-38
Solar Cell Short-Circuit Current, Isc

Assume very thin P+ layer and carrier generation in N region only.
Isc
P+
G
p() L
pG
Dp
2
p
p(0) 0
p( x) p G (1 e
P'
Lp
Dp
dp( x)
x / Lp
J p qD p
q
p Ge
dx
Lp
pG
0
x / Lp
I sc AJ p (0) AqL p G
G is really not uniform. Lp needs be larger than the light

penetration depth to collect most of the generated carriers.
Slide 4-39
Open-Circuit Voltage
Total current is ISC plus the PV diode (dark) current:

ni2 D p qV / kT
I Aq
(e
1) AqL p G
N d Lp
Solve for the open-circuit voltage (Voc) by setting I=0

(assuming e qVoc / kT 1)
2
ni D p qVoc / kT
0
e
LpG
N d Lp
kT
2
Voc
ln( p GN d / ni )
q
How to raise Voc ?
Slide 4-40
4.12.4OutputPower
A particular operating point on the
solar cell I-V curve maximizes the
output power (I V).
Output Power I sc Voc FF

Si solar cell with 15-20% efficiency
dominates the market now
Theoretically, the highest efficiency (~24%) can be obtained with
1.9eV >Eg>1.2eV. Larger Eg lead to too low Isc (low light
absorption); smaller Eg leads to too low Voc.
Tandem solar cells gets 35% efficiency using large and small Eg
materials tailored to the short and long wavelength solar light.
Slide 4-41
4.13LightEmittingDiodesandSolid-StateLighting
Lightemittingdiodes(LEDs)
LEDs are made of compound semiconductors such as InP
and GaN.
Light is emitted when electron and hole undergo radiative
recombination.
Ec
Radiative
recombination
Non-radiative
recombination
throughtraps
Ev
Slide 4-42
Direct and Indirect Band Gap
Trap
Direct band gap

Example: GaAs
Indirect band gap

Example: Si
Direct recombination is efficient

as k conservation is satisfied.
Direct recombination is rare as k

conservation is not satisfied
4.13.1LEDMaterialsandStructure
1.24
1.24
LED wavelength ( m)
photon energy E g (eV )
Slide 4-44
4.13.1LEDMaterialsandStructure
compoundsemiconductors
Egg(eV)
(eV )
E
Wavelength
(m)
Color
Lattice
constant
()
InAs
0.36
3.44
6.05
InN
0.65
1.91
infrared
3.45
InP
1.36
0.92
GaAs
1.42
0.87
GaP
2.26
0.55
AlP
3.39
0.51
5.45
GaN
2.45
0.37
3.19
AlN
6.20
0.20
5.87
red
Red
yellow
Yellow
blue
Green
violet
Blue
binary semiconductors:
-Ex:GaAs,efficientemitter
ternary semiconductor :
-Ex:GaAs1-xPx , tunable Eg (to
varythecolor)
5.66
5.46
UV
3.11
quaternary semiconductors:
-Ex:AlInGaP,tunableEgand
latticeconstant(forgrowinghigh
qualityepitaxialfilmson
inexpensivesubstrates)
Light-emittingdiodematerials
Slide 4-45
CommonLEDs
Spectral
range
Material
System
Substrate
Infrared
InGaAsP
InP
Infrared
-Red
GaAsP
GaAs
Indicatorlamps.Remote
control
AlInGaP
GaAor
GaP
Opticalcommunication.
High-brightnesstraffic
signallights
GreenBlue
InGaN
GaNor
sapphire
Highbrightnesssignal
lights.
Videobillboards
Blue-UV
AlInGaN
GaNor
sapphire
Solid-statelighting
RedBlue
Organic
semiconductors
glass
RedYellow
ExampleApplications
Opticalcommunication
AlInGaP
QuantunWell
Displays
Slide 4-46
4.13.2Solid-StateLighting
luminosity (lumen,lm): a measure of visible light energy
normalized to the sensitivity of the human eye at
different wavelengths
Incandescent
lamp
Compact
fluorescent
lamp
Tube
fluorescent
lamp
17
60
50-100
White
LED
Theoretical limit at
peak of eye sensitivity
( =555nm)
Theoretical limit
(white light)
683
~340
90-?
Luminousefficacyoflampsinlumen/watt
OrganicLightEmittingDiodes(OLED) :
has lower efficacy than nitride or aluminide based compound semiconductor LEDs.
Terms: luminosity measured in lumens. luminousefficacy,

Slide 4-47
4.14DiodeLasers
4.14.1LightAmplification
(a) Absorption
(d) Net Light

Absorption
(b) Spontaneous
Emission
(e) Net Light

Amplification
(c) Stimulated
Emission
Lightamplificationrequires
population inversion:electron
occupationprobabilityis
largerforhigherEstatesthan
lowerEstates.
Stimulatedemission:emittedphotonhasidenticalfrequencyand
directionalityasthestimulatingphoton;lightwaveisamplified.
Slide 4-48
4.14.1LightAmplificationinPNDiode
Population inversion
is achieved when
qV E fn E fp E g
Equilibrium,V=0
Populationinversion,qV>Eg
Slide 4-49
4.14.2OpticalFeedbackandLaser
P+
light
out
Cleaved
crystal
plane
N+
Laser threshold is reached (light

intensity grows by feedback)
when
R1 R2 G 1
R1,R2: reflectivities of the two
ends
G: light amplification factor (gain)
for a round-trip travel of the light
through the diode
Light intensity grows until R1 R2 G 1 , when the light intensity

is just large enough to stimulate carrier recombinations at the same
rate the carriers are injected by the diode current.
Slide 4-50
4.14.2OpticalFeedbackandLaserDiode
Distributed Bragg
reflector (DBR) reflects
lightwithmulti-layersof
semiconductors.
Vertical-cavity surfaceemitting laser (VCSEL) is
shownontheleft.
Quantum-welllaserhas
smallerthresholdcurrent
becausefewercarriers
areneededtoachieve
populationinversionin
thesmallvolumeofthe
thinsmall-Egwell.
Slide 4-51
4.14.3 Laser Applications

Red diode lasers: CD, DVD reader/writer
Blue diode lasers: Blu-ray DVD (higher storage density)
1.55 m infrared diode lasers: Fiber-optic communication
4.15 Photodiodes
Photodiodes: Reverse biased PN diode. Detects photogenerated current (similar to Isc of solar cell) for optical
communication, DVD reader, etc.
Avalanche photodiodes: Photodiodes operating near
avalanche breakdown amplifies photocurrent by impact
ionization.
Slide 4-52
Part III: Metal-Semiconductor Junction

Two kinds of metal-semiconductor contacts:
Rectifying Schottky diodes: metal on lightly
doped silicon
Low-resistance ohmic contacts: metal on
heavily doped silicon
Modern Semiconductor Devices for Integrated Circuits (C.

Hu)
Slide 4-53
Bn Increases with Increasing Metal Work Function
Vacuum level, E0
M : Work Function
of metal
Si = 4.05 eV
qM
qBn
Ec
Si : Electron Affinity of Si
Ef
Ev
Theoretically,
Bn=M Si
Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 4-54
4.16 Schottky Barriers

Energy Band Diagram of Schottky Contact
Metal
Depletion
layer
Neutral region
q Bn
N-Si
Ec
Ef
Schottky barrier height, B ,

Ev
Ec
P-Si
q Bp
Ef
Ev
is a function of the metal

material.
B is the most important
parameter. The sum of qBn
and qBp is equal to Eg .
Slide 4-55
Schottky barrier heights for electrons and holes
Bn + Bp Eg
Bn increases with increasing metal work function
Slide 4-56
Fermi Level Pinning
Vacuum level, E0
Si = 4.05 eV
q
M
qBn
Ec
A high density of
energy states in the
bandgap at the metalsemiconductor interface
pins Ef to a narrow
range and Bn is
Ef
typically 0.4 to 0.9 V
Ev
Question: What is the

typical range of Bp?

Hu)
Slide 4-57
Schottky Contacts of Metal Silicide on Si

Silicide: Asiliconandmetalcompound.Itisconductive
similartoametal.
Silicide-Si interfaces are more stable than metal-silicon
interfaces. After metal is deposited on Si, an annealing step is
applied to form a silicide-Si contact. The term metal-silicon
contact includes and almost always means silicide-Si contacts.
Silicide ErSi1.7 HfSi MoSi2 ZrSi2 TiSi2 CoSi2 WSi2 NiSi2 Pd2Si PtSi
BnBn (V) 0.28 0.45 0.55 0.55 0.61 0.65 0.67 0.67 0.75 0.87
0.55 0.49 0.45 0.45 0.43 0.43 0.35 0.23
BpBp (V)

Hu)
Slide 4-58
Using C-V Data to Determine B

qbi
qBn
Ec
Ef
Ev
qBn
q(bi + V)
qV
Ec
Ef
Ev
qbi q Bn ( Ec E f )
Nc
q Bn kT ln
Nd
Wdep
2 s (bi V )
qN d
s
C
A
Wdep
Question:
How should we plot the CV
data to extract bi?
Slide 4-59
Using CV Data to Determine B

1/C2
1
2(bi V )
2
C
qN d s A2
V
bi
qBn
qbi
Ec
Ef
Once bi is known, can

be determined using
E
v
Nc
qbi qBn ( Ec E f ) qBn kT ln
Nd
Slide 4-60
4.17 Thermionic Emission Theory

vthx
Metal
N-type
Silicon
Efm
q( B V)
qB
qV
Ec
Efn
Ev
2mn kT
h 2
n N c e q ( B V ) / kT 2
vth 3kT / mn
J S M
3/ 2
e q ( B V ) / kT
vthx 2kT / mn
1
4qmn k 2 2 q B / kT qV / kT
qnvthx
T e
e
3
2
h
J 0 e qV / kT , where J o 100e q B / kT A/cm 2
Slide 4-61
4.18 Schottky Diodes
Forward
biased
V=0
Reverse
biased
Reverse bias

Hu)
V
Forward bias
Slide 4-62
4.18 Schottky Diodes
I 0 AKT 2 e q B / kT
4qmn k 2
2
2
K
100
A/(cm
K
)
3
h
I I S M I M S I 0 e qV / kT I 0 I 0 (e qV / kT 1)
Slide 4-63
4.19 Applications of Schottly Diodes

I I
Schottky
Schottkydiode
I I 0 (e qV / kT 1)
I 0 AKT 2 e q B / kT
BB
PNjunction
PN
junction
diode
V
V
I0 of a Schottky diode is 103 to 108 times larger than a PN
junction diode, depending on B . A larger I0 means a smaller

forward drop V.
A Schottky diode is the preferred rectifier in low voltage,
high current applications.
Slide 4-64
Switching Power Supply
PN Junction
rectifier
110V/220V
AC
utility
power
Schottky
rectifier
Transformer
100kHz
Hi-voltage
Hi-voltage
DC
MOSFET
AC
Lo-voltage
AC
50A
1V
DC
inverter
feedback to modulate the pulse width to keep Vout = 1V
Slide 4-65
4.19 Applications of Schottky diodes

Question: What sets the lower limit in a Schottky diodes
forward drop?
Synchronous Rectifier: For an even lower forward drop,
replace the diode with a wide-W MOSFET which is not
bound by the tradeoff between diode V and leakage current.
There is no minority carrier injection at the Schottky
junction. Therefore, Schottky diodes can operate at higher
frequencies than PN junction diodes.
Slide 4-66
4.20 Quantum Mechanical Tunneling
Tunneling probability:
P exp( 2T
8 2 m
(VH E ) )
2
h
Slide 4-67
4.21 Ohmic Contacts
Slide 4-68
4.21 Ohmic Contacts

Wdep
2 s Bn
qN d
Silicide
N+ Si
Bn
Ec , Ef
Bn V
Efm
Ec , Ef
Tunneling
probability:
Pe
H Bn
Nd
T Wdep / 2
4
H
h
J S M
Ev
Ev
x
sBn / 2 qN d
s mn / q
1
qN d vthx P qN d
2
kT / 2mn e

Hu)
H ( Bn V ) /
Nd
Slide 4-69
4.21 Ohmic Contacts
dJ S M
Rc
dV
H Bn / N d
2e
H Bn /
e
qvthx H N d

Hu)
Nd
cm 2
Slide 4-70
4.22 Chapter Summary

Part I: PN Junction
The potential barrier
increases by 1 V if a 1 V
reverse bias is applied
kT N d N a
bi
ln
2
q
ni
depletion width
junction capacitance
Wdep
2 s potential barrier
qN
Cdep
s
A
Wdep
Slide 4-71

Under forward bias, minority carriers are injected
across the jucntion.
The quasi-equilibrium boundary condition of
minority carrier densities is:
n( x p ) nP 0 e qV
p ( x N ) p N 0 e qV
kT
kT
Most of the minority carriers are injected into the

more lightly doped side.
Slide 4-72

Steady-state
continuity equation:
d 2 p
p
p
2
2
dx
D p p L p
L p D p p
Minority carriers
diffuse outward e|x|/Lp
and e|x|/Ln
Lp and Ln are the
diffusion lengths
I I 0 (e qV
1)
Dn
L N
p d Ln N a
I 0 Aqni
2
kT
Dp
Slide 4-73
Charge storage:
Q I s
Diffusion capacitance:
C sG
Diode conductance:
G I DC
kT
/
q
Slide 4-74

Part II: Optoelectronic Applications
Solar cell power I sc Voc FF
~100um Si or <1um directgap semiconductor can absorb most of solar
photons with energy larger than Eg.
Carriers generated within diffusion length from the junction can be
collected and contribute to the Short Circuit Current I sc.
Theoretically, the highest efficiency (~24%) can be obtained with 1.9eV
>Eg>1.2eV. Larger Eg lead to too low Isc (low light absorption); smaller Eg
leads to too low Open Circuit VoltageVoc.
Si cells with ~15% efficiency dominate the market. >2x cost reduction
(including package and installation) is required to achieve cost parity with
base-load non-renewable electricity.
Slide 4-75

LED and Solid-State Lighting
Electron-hole recombination in direct-gap semiconductors such as GaAs
produce light.
Tenary semiconductors such as GaAsP provide tunable E g and LED color.
Quatenary semiconductors such as AlInGaP provide tunable E g and lattice
constants for high quality epitaxial growth on inexpensive substrates.
Beyond displays, communication, and traffic lights, a new application is
space lighting with luminous efficacy >5x higher than incandescent lamps.
White light can be obtained with UV LED and phosphors. Cost still an issue.
Organic semiconductor is an important low-cost LED material class.
Slide 4-76

Laser Diodes
Light is amplified under the condition of population inversion states at
higher E have higher probability of occupation than states at lower E.
Population inversion occurs when diode forward bias qV > E g.
Optical feedback is provided with cleaved surfaces or distributed Bragg
reflectors.
When the round-trip gain (including loss at reflector) exceeds unity, laser
threshold is reached.
Quantum-well structures significantly reduce the threshold currents.
Purity of laser light frequency enables long-distance fiber-optic
communication. Purity of light direction allows focusing to tiny spots and
enables DVD writer/reader and other application.
Slide 4-77

Part III: Metal-Semiconductor Junction
I 0 AKT 2 e qB / kT
Schottky diodes have large reverse saturation current, determined by the
Schottky barrier height B, and therefore lower forward voltage at a given
current density.
Ohmic contacts relies on tunneling. Low resistance contact requires
low B and higher doping concentration.
Rc e
4
B s mn / qN d )
h
cm 2
Slide 4-78
Bn Increases with Increasing Metal Work Function
Vacuum level, E0
Si = 4.05 eV
qM
q Bn
Ideally,
Bn=M Si
Ec
Ef
Ev
Slide 4-79

Ch.4 Lecture Slides For Chenming Hu Book: Modern Semiconductor Devices For ICs

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Chapter 4 PN and Metal-Semiconductor Junctions

4.1 Building Blocks of the PN Junction Theory

PN junction is present in perhaps every semiconductor device.

Ec and Ev are known

Ec and Ev are smooth,

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

Can the built-in potential be measured with a voltmeter?

s: permittivity (~12o for Si)

4.2 Depletion-Layer Model

D eple tion La yer

On the P-side of the

On the N-side, = qNd

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

D eple tion La yer

The electric field is continuous at x = 0.

A one-sided junction is called a N+P junction or P+N junction

Arbitrarily choose the

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

D eple tion La yer

What about a N+P junction? E

N N d N a lighter dopant density

EXAMPLE: A P+N junction has Na=1020 cm-3 and Nd

xP x N N d N a 1.2 104 m 1.2 0

4.3 Reverse-Biased PN Junction

N N d N a lighter dopant density

Does the depletion layer

4.4 Capacitance-Voltage Characteristics

Reverse biased PN junction is

Is Cdep a good thing?

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.4 Capacitance-Voltage Characteristics

Slope = 2/qN sA2

Increasing reverse bias

From this C-V data can Na and Nd be determined?

EXAMPLE: If the slope of the line in the previous slide is

Is this an accurate way to determine Nl ? Nh ?

4.5 Junction Breakdown

A Zener diode is designed to operate in the breakdown mode.

increasing reverse bias

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

impact ionization: an energetic

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.6 Forward Bias Carrier Injection

Drift and diffusion cancel out

Minority carrier injection

4.6 Forward Bias

The minority carrier

densities are raised

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.6 Carrier Injection Under Forward Bias

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

EXAMPLE: Carrier Injection

Question: What are the excess minority carrier concentrations?

4.7 Current Continuity Equation

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.7 Current Continuity Equation

Minority drift current is

Lp and Ln are the diffusion lengths

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.8 Forward Biased Junction-- Excess Carriers

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

4.8 Excess Carrier Distributions