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InsulatedGateBipolarTransistors(IGBTs)
Outline
ConstructionandIVcharacteristics
Physicaloperation
Switchingcharacteristics
Limitationsandsafeoperatingarea
PSPICEsimulationmodels
CopyrightbyJohnWiley&Sons2003
IGBTs1
MulticellStructureofIGBT
IGBT=insulatedgatebipolartransistor.
emitter
conductor
contact to source
diffusion
field
oxide
gate
oxide
N+
N+
NN+
P+
N+
N+
gate
width
buffer layer
(not essential)
collector
metallization
gate
conductor
CopyrightbyJohnWiley&Sons2003
IGBTs2
CrosssectionofIGBTCell
gate
emitter
SiO
2
J
3
J
N
P
Ls
N
+
N
+
P
collector
Parasitic thyristor
Buffer layer
(not essential)
CellstructuresimilartopowerMOSFET(VDMOS)cell.
PregionatcollectorenduniquefeatureofIGBTcomparedtoMOSFET.
Punchthrough(PT)IGBTN+bufferlayerpresent.
Nonpunchthrough(NPT)IGBTN+bufferlayerabsent.
CopyrightbyJohnWiley&Sons2003
IGBTs3
CrosssectionofTrenchGateIGBTUnitCell
Emitter
boddy-source short
Oxide
N+
P
Parasitic
SCR
N+
Channel
P
length
Gate
conductor
I
N-
NonpunchthruIGBT
+
Collector
Emitter
boddy-source short
Oxide
N+
P
Parasitic
SCR
N+
Channel
P
length
Gate
conductor
N-
ID
P
PunchthruIGBT
ID
N+
Collector
CopyrightbyJohnWiley&Sons2003
IGBTs4
IGBTIVCharacteristicsandCircuitSymbols
i
increasing V
GE
v
GE4
No Buffer Layer
v GE3
VRM BV
CES
GE2
v GE1
V 0
RM
V
V
GE(th)
v
CE
RM
Outputcharacteristics
GE
Transfercurve
BV
CES
collector
drain
NchannelIGBTcircuitsymbols
gate
gate
source
emitter
CopyrightbyJohnWiley&Sons2003
IGBTs5
Blocking(Off)StateOperationofIGBT
gate
SiO
2
J
3
J
emitter
N
N
P
Ls
N
+
N
+
P
collector
Parasitic thyristor
Buffer layer
(not essential)
IGBTs6
IGBTOnstateOperation
gate
emitter
N
P
lateral (spreading)
resistance
N
+
N-
P+
On-state V CE(on) =
collector
gate
emitter
N
N
P
NN
P+
V J 1 + Vdrift + ICRchannel
collector
CopyrightbyJohnWiley&Sons2003
IGBTs7
ApproximateEquivalentCircuitsforIGBTs
drift region
resistance
gate
V
drift
J1
channel
Approximateequivalentcircuitfor
IGBTvalidfornormaloperating
conditions.
gate
Principal
(desired)
path of
collector
current
collector
Body region
spreading
resistance
emitter
IGBTequivalentcircuitshowing
transistorscomprisingtheparasitic
thyristor.
IGBTs8
StaticLatchupofIGBTs
lateral (spreading)
resistance
J
N
emitter
gate
P
J2
J 1
NN
+ +
P+
collector
Conduction paths causing lateral voltage drops and turn-on
of parasitic thyristor if current in this path is too large
Lateralvoltagedrops,iftoolarge,willforwardbiasjunctionJ3.
ParasiticnpnBJTwillbeturnedon,thuscompletingturnonofparasiticthyristor.
LargepowerdissipationinlatchupwilldestroyIGBTunlessterminatedquickly.
Externalcircuitmustterminatelatchupnogatecontrolinlatchup.
CopyrightbyJohnWiley&Sons2003
IGBTs9
DynamicLatchupMechanisminIGBTs
J
gate
emitter
3
+
J 2 P
lateral
(spreading)
resistance
J 1
NN
expansion of
depletion region
P+
collector
MOSFETsectionturnsoffrapidlyanddepletionlayerofjunctionJ2expandsrapidlyinto
Nlayer,thebaseregionofthepnpBJT.
ExpansionofdepletionlayerreducesbasewidthofpnpBJTanditsaincreases.
MoreinjectedholessurvivetraversalofdriftregionandbecomecollectedatjunctionJ2.
IncreasedpnpBJTcollectorcurrentincreaseslateralvoltagedropinpbaseofnpnBJTand
latchupsoonoccurs.
Manufacturersusuallyspecifymaximumallowabledraincurrentonbasisofdynamic
latchup.
CopyrightbyJohnWiley&Sons2003
IGBTs10
InternalCapacitancesVsSpecSheetCapacitances
C
C gc
G
bridge
C
+V b
Cce
C ge
C gc
E
G
Cies
Cies = C ge + C gc
C oes
E
C oes = C gc + Cce
CopyrightbyJohnWiley&Sons2003
IGBTs11
IGBTTurnonWaveforms
V
GG+
(t)
GE
d(on)
Io
i (t)
C
Increase in Cge of
t
ri
V
V
v
CopyrightbyJohnWiley&Sons2003
CE(on)
DD
(t)
CE
t fv1
t
t fv2
IGBTs12
IGBTTurnoffWaveforms
V
v (t)
GE
rv
fi2
MOSFET
current
BJT
current
t d(off)
fi1
V
v
V
GGt
i (t)
C
GE(th
)
DD
t
(t)
CE
CopyrightbyJohnWiley&Sons2003
IGBTSafeOperatingArea
i
Maximum collector-emitter
voltages set by breakdown
voltage of pnp transistor 2500 v devices available.
C
-5
10 sec
FBSOA
-4
10 sec
DC
re-applied
dv
CE
dt
1000 V/
v
CE
RBSOA
3000 V/ s
v
CE
CopyrightbyJohnWiley&Sons2003
Manufacturer specifies a
maximum rate of increase of
re-applied collector-emitter
voltage in order to avoid latchup.
IGBTs14
DevelopmentofPSpiceIGBTModel
Cm
Coxs
source
N
gate
Coxd
Cgdj
P
Cdsj
Ccer
Drain-body or
base-collector
depletion layer
N
N
Rb
Cebj + Cebd
+
P
drain
NonlinearcapacitorsCdsjandCcerduetoNPjunctiondepletionlayer.
Reference"An
ExperimentallyVerified
NonlinearcapacitorCebj+CebdduetoP+N+junction
IGBTModel
Implementedinthe
MOSFETandPNPBJTareintrinsic(noparasitics)devices
SABERCircuit
Simulator",AllenR.
NonlinearresistorRbduetoconductivitymodulationofN draindriftregionof
Hefner,Jr.andDaniel
MOSFETportion.
M.Diebolt,IEEETrans.
onPowerElectronics,
NonlinearcapacitorCgdjduetodepletionregionofdrainbodyjunction(N Pjunction). Vol.9,No.5,pp.532
542,(Sept.,1994)
Circuitmodelassumesthatlatchupdoesnotoccurandparasiticthyristordoesnotturn.
CopyrightbyJohnWiley&Sons2003
IGBTs15
ParameterEstimationforPSpiceIGBTModel
BuiltinIGBTmodelrequiresnineparametervalues.
ParametersdescribedinHelpfilesofPartsutilityprogram.
Partsutilityprogramguidesusersthroughparameterestimationprocess.
IGBTspecificationsheetsprovidedbymanufacturerprovidesufficient
informaitonforgeneralpurposesimulations.
Detailedaccuratesimulations,forexampledevicedissipationstudies,may
requiretheusertocarefullycharacterizetheselectedIGBTs.
Drain
Cgdj
Coxd
Gate
Cebj +
Cebd
Ccer
Rb
Cdsj
Cm +
Coxs
Builtinmodeldoesnotmodel
ultrafastIGBTswithbuffer
layers(punchthroughIGBTs)or
reversefreewheelingdiodes
Source
CopyrightbyJohnWiley&Sons2003
IGBTs16
PSpiceIGBTSimulationVsExperiment
0V
10 V
5V
1
nF
15 V
20 V
25 V
0.75
nF
for IXGH40N60
V
GE
=0V
0.5
nF
0.25
nF
100 V
200 V
300 V
400 V
500 V
IGBTs17