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Deposition
PVD
Evaporation
Evaporation
http://www.ee.byu.edu/cleanroom/metal.parts/vaporpressure.jpg
2d o2 n
PV nRT (Ideal Gas Law)
0.05
P (in torr )
where do is the diameter of the evaporatant and n
is the concentration of gas molecules in the
chamber
Evaporation
Thermal Evaporation
http://www.lesker.com/neww
eb/Deposition_Sources/Ther
malEvaporationSources_Resi
stive.cfm
E-beam Evaporation
http://www.fen.bilkent.edu.tr/~aykutlu/msn551/evaporation.pdf
PVD
At
PVD
PVD
Evaporation
Revap
m
5.83 10 AS
T
2
1/ 2
Pe
PVD
PVD
The
PVD
Revap
Nr
cos k cos i
Planetaries
Wafer
PVD
Nonuniformity
of evaporatant can
occur when angular emission of
evaporant is narrower than the ideal
source
Crucible geometry
Melt depth to melt area ratio
Density of gas atoms over the surface of
the melt
Evaporation
Evaporation
Compounds
Evaporation
Advantages
Little damage to the
wafer
Deposited films are
usually very pure
Limited step
coverage
Disadvantages
Materials with low
vapor pressures ae
very difficult to
evaporated
Refractory metals
High temperature
dielectrics
No in situ precleaning
Limited step
coverage
Film adhesion can be
problematic
Step-coverage
Sputtering
Sputtering
http://www.knovel.com
Deposition conditions
Temperature:
Room to higher
Pressure: 100mtorr
compromise between increasing number
of Ar ions and increasing scattering of Ar
ions with neutral Ar atoms
Power
Sputter sources
Magnetron
Magnetic field traps freed electron near target
Move in helical pattern, causing large number of
scattering events with Ar gas creating high density of
ionized Ar
Ion beam
Plasma of ions generated away from target and then
accelerated toward start by electric field
Reactive sputtering
Gas used in plasma reacts with target material to form
compond that is deposited on wafer
Ion-assisted deposition
Wafer is biased so that some Ar ion impact its surface,
density the deposited film. May sputter material off of
wafer prior to deposition for in-situ cleaning.
Sputtering
Advantages
Large-size targets,
simplifying the deposition of
thins with uniform thickness
over large wafers
Film thickness is easily
controlled by fixing the
operating parameters and
simply adjusting the
deposition time
Control of the alloy
composition, step coverage,
grain structure is easier
obtained through
evaporation
Sputter-cleaning of the
substrate in vacuum prior to
film deposition
Device damage from X-rays
generated by electron beam
evaporation is avoided.
Disadvantages
High capital expenses are
required
Rates of deposition of
some materials (such as
SiO2) are relatively low
Some materials such as
organic solids are easily
degraded by ionic
bombardment
Greater probability to
introduce impurities in the
substrate because the
former operates under a
higher pressure
Salicide
http://www.research.ibm.com/journal/rd/444/jordansweet.html