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GHz SSPA
GAETEC, Hyderabad
Specifications
S/N
Parameter
Specification
1.
Frequency
2.
3.
4.
Power Output
5.
6.
7.
8.
9.
Near-carrier Phase-noise
90 dBc/Hz or better
@ 100 Hz offset (Maximum 2 dB spectral degradation) for input signal spectral purity of 92 dBc/Hz
Spurious
70 dBm/MHz (max.)
10.
Harmonics
20 dBc (max.)
11.
SMA female
12.
Input VSWR
1.5:1 or better
13.
Output VSWR
1.5:1 or better
14.
Input Voltages
15.
+ 8V @ 1.5 A
5V @ 20 mA
0.1V
16.
Vdd: 8V0.5V,-5V0.25V
Remarks
Implementation block
diagram
Thermopa
d
(optional)
Driver
Amplifier
MMIC
Gain: 15 dB
P1dB: 18dBm
Thermopa
d
(optional)
High Power
Amplifier MMIC
Gain: 18 dB
P1dB: 33dBm
Drop-in Isolator
Insertion Loss: 1
dB
Gain
Pout
PAE
Vds/Ids
Chip
Size
Remarks
8V/105mA 2.1x1.5
mm
6V/30mA
Vg:-0.6V
5V/80mA
12dB 26 dBm
8V/350mA
Low Gain
8V/100mA TBD
Vgg=-0.4V
Focus on gain
flatness
28% 6V/400mA
Vg:-0.6V
35% 8V/1.3A
Vgg=-0.8V
New foundry
1.14x1.24
mm
Low P1dB
2.0x2.5
mm
3.13x2.1
mm
Low P1dB
New foundry
Low gain
pHEMT
Gate Length
0.25 m
35 GHz
Power Density
VBGD
Pinch-off Voltage
-0.9V
VDS (max)
8V (Typ)
Imax
500 mA/mm
Passive components
Availability Status
Parameter
Frequency
Specification
17 GHz 150 MHz
2.
Gain
15dB
3.
P1dB
18dBm
4.
5.
6.
Noise figure
7.
Power supply
8.
S/N
1.
2.
Gain
18dB (min)
3.
P1dB
33dBm
4.
5.
6.
Noise figure
7.
Power supply
Power Amplifier
3x2mm
Specification
17 GHz 150 MHz
Remarks
Remarks
T2
4x30m
T1
4x30m
T1
0.6mm
T6
0.8mm
T3
0.8mm
T7
0.8mm