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Power MOSFETs

Two Types
Depletion Type
Channel region is already diffused between the
Drain and Source
Deplete, or pinch-off the Channel

Enhancement Type
No channel region exists between the Drain and
Source
Invert the region between the Drain and Source
to induce a channel
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Depletion MOSFET

N-Channel Depletion MOSFET

Normally Reverse-Bias the Gate-Source Junction

Enhancement MOSFET

N-Channel Enhancement MOSFET

The Gate-Source Junction will be Forward-Biased


The bias voltage must be greater than a threshold voltage
A Channel region is induced between the Drain and Source
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Drain Characteristics

Steady-State Characteristics

Switching Characteristics

Equivalent Circuit

Switching Model

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Switching Waveforms and Times

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Turn-on Delay, td(on) = time to charge the input


capacitance to VT
Rise time, tr = Charging time to charge the input
capacitance to the full gate voltage, VGSP in order to drive
the transistor into the linear region of operation

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Turn-off delay time, td(off) = time for the input capacitance to


discharge from overdrive voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge
from pinch-off to the threshold voltage.

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i.
ii.
iii.

iv.
Cut-off region

MOSFET is a voltage controlled majority carrier device.


A MOSFET does not undergo second break down.
Unlike BJT the maximum forward voltage withstanding
capability of a MOSFET does not depend on the drain
current.
SOA of a MOSFET does not change under Forward and
Reverse bias conditions

Ohmic region
Active region
Characteristics Features
Modes of operation
POWER MOSFET

Advantages

(i) For similar voltage rating, a MOSFET


has a relatively higher conduction loss
and lower
switching loss compared to a BJT.
Therefore, MOSFETs are more popular
for high frequency (>50 kHz) low voltage
(<100 V) circuits.

Disadvantages

The gate oxide layer can be damaged by static charge.


r (ON) reduces with higher vgs. Therefore, to minimize
conduction power loss maximum permissible vgs
gs
should be used subject to dielectric break down
of the gate oxide layer.
DS
DS

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SUMMARY

MOSFET is a voltage controlled majority carrier device.


A Power MOSFET has a vertical structure of alternating p and n layers.
The main current carrying terminals of an n channel enhancement mode MOSFET
are called the Drain and the Source and are made up of n+ type semiconductor.
The control terminal is called the Gate and is isolated form the bulk semiconductor by
a thin layer of SiO2.
p type semiconductor body separates n+ type source and drain regions.
A conducting n type channel is produced in the p type body region when a positive
voltage greater than a threshold voltage is applied at the gate.
Current conduction in a MOSFET occurs by flow of electron from the source to the
drain through this channel.
When the gate source voltage is below threshold level a MOSFET remains in the Cut
Off region and does not conduct any current.
With VGS> VGS(th) and VDS< (VGS VGS (th)) the drain current in a MOSFET is
proportional to VDS. This is the Ohmic region of the MOSFET output characteristics.

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