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APD
The diode operates in the reverse bias mode in order to
increase the field in the depletion regions.
Applying an adequate R.B. will force the depletion region
in the p-layer to reach-through to layer.
p
to the - side depletion layer.
Absorption of photons and therefore photogeneration takes
place in the long layer.
It is a uniform field in the layer due to the small net
space charge density.
APD
The E-field is at a maximum at the n - side and a
p at the p - side.
minimum
Drifting electrons arriving at the p-layer experience
elevated fields and acquire enough kinetic energy (greater
than Eg) to impact-ionize some of the Si covalent bonds
and release EHPs.
These EHPs can be accelerated by high fields to high
kinetic energies to cause further impact ionization
releasing even more EHPs leading to an avalanche of
impact-ionization process.
APD
In summary a single elctron entering the p-layer can
generate a large number of EHPs which contribute to an
observed photocurrent.
APDs have an internal gain mechanism.
This avalanche multiplication corresponds to a quantum
efficiency greater than unity.
Why is photogeneration restricted to the region ?
Electrons as a carrier in Si have a higher impact ionization
efficiency than holes (less excess noise in avalanche
multiplied photocurrent).
APD
Factors determining speed:
1. Time it takes for photogenerated electron to cross the
absorption region ( layer) to the multiplication layer
(p layer).
2. Time it takes for the avalanche process to build-up in the
p-region and generate EHPs.
3. Time it takes for the last hole released in the avalanche
process to vacate the region.
I ph
Multiplied Photocurrent
M
primarymultipliedphotocurrent I pho
1
Vr
1
Vbr
APD
Response time of APD is longer than PIN diode however it
offers gain.
APD does not require additional amplification which
introduces delay to PIN diode.
Drawback of APD: The peripheral edge of the n p
n
junction reaches avalanche breakdown before the
p
window of illumination area.
Uniform avalanche multiplication is required to promote
avalanching of primary photocurrent versus dark current
(generates random EHPs). Remedy: guard ring.
Electrode
Ip h
SiO2
E
h>Eg
e
n+ p
h+
n et
(a)
p+
Electrode
(b)
x
E (x)
(c)
Absorption
region
Avalanche
region
(a)Aschematicillustrationofthestructureofanavalanchephotodiode(APD)biased
foravalanchegain.(b)Thenetspacechargedensityacrossthephotodiode.(c)The
fieldacrossthediodeandtheidentificationofabsorptionandmultiplicationregions.
1999S.O.Kasap,Optoelectronics (PrenticeHall)
h+
Ec
Ev
h+
n+
Avalancheregion
(a)
(b)
(a)ApictorialviewofimpactionizationprocessesreleasingEHPsand
theresultingavalanchemultiplication.(b)Impactofanenergetic
conductionelectronwithcrystalvibrationstransferstheelectron's
kineticenergytoavalenceelectronandtherebyexcitesittothe
conductionband.
1999S.O.Kasap,Optoelectronics (PrenticeHall)
Electrode
SiO 2
Antireflectioncoating
n+
p
(a)
Guardring
Avalanchebreakdown
n+
p
(b)
p+
p+
Substrate
Substrate
Electrode
Electrode
(a)ASiAPDstructurewithoutaguardring.(b)Aschematicillustrationofthe
structureofamorepracticalSiAPD
1999S.O.Kasap,Optoelectronics (PrenticeHall)
Vr
Ip h
Electrode
InP
InP
EE
InGaAs
Vout
e
h+
P+
E (x)
Avalanche
region
n+
Absorption
region
x
Simplifiedschematicdiagramofaseparateabsorptionandmultiplication
(SAM)APDusingaheterostructurebasedonInGaAsInP. PandNreferto
pandntypewiderbandgapsemiconductor.
1999S.O.Kasap,Optoelectronics (PrenticeHall)
Ec
(a)
InP
Ev
e
Ec
E v
InGaAs
h+
(a)Energybanddiagramfora
SAMheterojunctionAPDwhere
thereisavalencebandstepEv
fromInGaAstoInPthatslows
holeentryintotheInPlayer.
Ev
InP
(b)
Ev
InGaAsPgradinglayer
InGaAs
h+
Ev
(b)Aninterposinggradinglayer
(InGaAsP)withanintermediate
bandgapbreaksEvandmakesit
easierfortheholetopasstotheInP
layer
1999S.O.Kasap,Optoelectronics (PrenticeHall)
Photon
Electrode
nIn0 . 5 3 Ga0 . 4 7 As(510m)Absorptionlayer
Graded nInGaAsP(<1m)
NInP(23m)Multiplicationlayer.
Electrode
P+InP(23m)Bufferepitaxiallayer
P+InPSubstrate
SimplifiedschematicdiagramofamorepracticalmesaetchedSAGMlayered
APD.
1999S.O.Kasap,Optoelectronics (PrenticeHall)
1020nm
h
E c
Eg 2
Ec
h+
p+
Eg 1
Ev
n+
(a)
(b)
EnergybanddiagramofastaircasesuperlatticeAPD(a)Nobias.(b)With
anappliedbias.
1999S.O.Kasap,Optoelectronics (PrenticeHall)