CN4223R Microelectronics Thin Film

PHYSICAL
VAPOUR
DEPOSITION
ENHANCEMENTS

your
next-generation
foundry

Associate Professor (Adjunct) Simon Chooi

Department of Chemical & Biomolecular Engineering
National University of Singapore

Reference: Silicon Processing for the VLSI Era Volume 1, chapter 10, 1 ST edition, page 335-347 & 353-357
2nd edition, page 438-449, 456-461 & 480-483
(not examinable)

Overview In CN4223R
Metal & Metal alloy films

Film Deposition in Vacuum

(Vacuum Technology)

Physical Vapour Deposition

(Sputtering)

Chemical Vapour Deposition

Metal barrier films

Dielectric films
Polycrystalline silicon films

Spin-on-glass (SOG)
Spin Coating
Film Deposition under
Atmospheric Conditions

Spin-on dielectrics (SOD)

Electrodeposition

Copper

CN4223R / Assoc Prof Simon Chooi

Step Coverage and Aspect Ratio

X 100%

X 100%

e.g. H = 20m and W = 5m, then aspect ratio is 4:1

CN4223R / Assoc Prof Simon Chooi

PVD: Angular Lines of Sight

Deposition
Metal Target

2
1

At low pressure (high vacuum), atoms travel straight line trajectory

Arrival angle of any point in topography is based on unblocked lines of sight to that point
Shadowing effect
CN4223R / Assoc Prof Simon Chooi

Sputter Deposition In Topographical

Features

Favourable: Mostly isotropic nature of sputtered atoms

At short target-to-wafer distances, depositing atoms move at angles from normal incidence to deviated normal
incidence

Target

Target

Low Aspect Ratio feature

- Ideal coverage

High Aspect Ratio (HAR) Feature (e.g. trench or contact hole/via)

Not ideal lateral deposition quickly leads to narrowing
and eventual closure. Void formation

CN4223R / Assoc Prof Simon Chooi

Directional Sputter Deposition For HAR Features:

Collimator

Effective filtering of depositing atoms by putting a collimator between cathode and wafer
Cathode

Target

Target

Collimator

Reduces thickness of overhang more less deviated from normal incidence

atoms reaches the bottom and lower sidewall of HAR features
Degree of angular filtering relates to aspect ratio (length/depth to width) of
collimator cell. Semiconductor industry typically uses 1:1 to 1.5:1

Concerns: (1) Deposition rate reduced as a function of collimator life

(2) Particle generation
CN4223R / Assoc Prof Simon Chooi

Directional Sputter Deposition For HAR Features:

Long Throw Deposition

Most conventional sputtering systems: short target-to-wafer (short throw) distances higher deposition rates

Increase throw distance greater loss of non-normal incidence atoms

requires lower pressure
limited by geometrical asymmetry problem

SPUTTER SOURCE

SPUTTER SOURCE

WAFER

Short Throw

WAFER

Long Throw
CN4223R / Assoc Prof Simon Chooi

Surface Mobility-based Sputter Deposition For HAR

Features

Thermal Reflow
- Goal: move deposited film atoms from field areas into trenches or contact holes/vias
- Generally 3-step process: deposit seed layer at low temperature increase temperature of wafer (substrate)
second deposition at high temperature where theres surface diffusion
- Can be 2-step process: deposit layer at low temperature increase temperature of wafer (substrate) to flow the
film
- Requires high levels of cleanliness since surface contaminants or gas phase impurities impede mobility
- Successfully applied for AlCu interconnects

High Pressure Filling

High rate sputter deposition

Metal bridging at top of feature

Ultra-high pressure at elevated temperature
sealed gas cavity
forces metal to fill feature

CN4223R / Assoc Prof Simon Chooi

Ionized Sputter Deposition For HAR

Features

How to re-direct the trajectory of the ejected/sputtered metal atoms?

Ionization of the metal atoms in a plasma: M (neutral) M+ ion

Ionized PVD (Applied Materials)

Radio-frequency (rf) source typically outside deposition chamber
rf source creates secondary plasma, ionizes the neutral atoms,
the latter then accelerates directionally onto the biased wafer

HCMTM - Hollow Cathode Magnetron (Novellus)

Unique designed magnetic fields produce high density of ions,
which is then focussed by the electromagnetic (EM) coil onto the
unbiased wafer

CN4223R / Assoc Prof Simon Chooi

A Comparison

Note: in semiconductor industry, PVD = sputtering.

in CN4223R, use PVD in the correct context
CN4223R / Assoc Prof Simon Chooi