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POWER DIODE

Time Ta: Charges stored in the depletion layer


removed.
Time Tb: Charges from the semiconductor layer is
removed.
Ratio of Tb / Ta is softness factor

SF measures the voltage transients that occur


during the time diode recovers
SF=1 ; low oscillatory (soft recovery diode)
SF<1; Fast recovery diode of snappy recovery
diode

BJT

INTRODUCTION
n 1947 J. Barden, W. Bratterin and W. Shockley
invented transistor.
The term transistor was given by John R. Pierce.
Through initially it was called the solid state
version of the vacuum triode, but the term
transistor has survived.
The word transistor is derived from the words
Transfer and Resistor it describes the operation
of a BJT i.e. the transfer of an input signal from a
low resistance circuit to a high resistance circuit.

This type of transistor is made up of


semiconductors.

CONTD

We know that silicon (Si) and Germanium (Ge) are the


examples of semiconductors.
Now, why this is called junction transistor? The answer lies
behind the construction. We already know what is p - type
and n - type semiconductors.
Now, in this type of transistor any one type of
semiconductors is sandwiched between the other type of
semiconductor.
For example, an n - type can be sandwiched between two p
- type semiconductors or similarly one p - type can be
sandwiched between two n - type semiconductors.
These are called p - n - p and n - p - n transistors
respectively.
Now as there are two junctions of different types of
semiconductors, this is called junction transistor. Its called
bipolar because the conduction takes place due to both
electrons as well as holes.

DEFINITION OF BJT

A bipolar junction transistor is a three terminal semiconductor device


consisting of two p-n junctions which is able to amplify or magnify a
signal.
It is a current controlled device. The three terminals of the BJT are the
base, the collector and the emitter.
A signal of small amplitude if applied to the base is available in the
amplified form at the collector of the transistor. This is the amplification
provided by the BJT.
Note that it does require an external source of DC power supply to carry
out the amplification process.
From the above figure, we can see that every BJT has three parts named
emitter, base and collector. JE and JC represent junction of emitter and
junction of collector respectively. Now initially it is sufficient for us to
know that emitter based junction is forward biased and collector base
junctions is reverse biased. The next topic will describe the two types of
this transistors.

N-P-N BIPOLAR JUNCTION


TRANSISTOR
As started before in n - p - n bipolar transistor one p - type
semiconductor resides between two n - type semiconductors the
diagram below a n - p - n transistor is shown

Now IE, IC is emitter current and collect current respectively and VEB
and VCB are emitter base voltage and collector base voltage respectively.
According to convention if for the emitter, base and collector current IE,
IB and IC current goes into the transistor the sign of the current is taken
as positive and if current goes out from the transistor then the sign is
taken as negative.

P-N-P BIPOLAR JUNCTION TRANSISTOR


Similarly for p - n - p bipolar junction transistor a n-type
semiconductors is sandwiched between two p-type semiconductors. The
diagram of a p - n - p transistor is shown below

For p - n - p transistors, current enters into the transistor through the


emitter terminal. Like any bipolar junction transistor, the emitter base
junction is forward biased and the collector base junction is reverse
biased.

BIPOLAR JUNCTION TRANSISTORS


CHARACTERISTICS
The three parts of a BJT are collector, emitter and base. Before knowing
about the bipolar junction transistor characteristics, we have to know
about the modes of operation for this type of transistors. The modes are
Common Base (CB) mode
Common Emitter (CE) mode
Common Collector (CC) mode

CHARACTERISTICS OF BJT
There are different characteristics for different modes of operation.
Characteristics is nothing but the graphical forms of relationships
among different current and voltage variables of the transistor.
The characteristics for p - n - p transistors are given for
different modes and different parameters.

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