Field Effect

Transistors
IBM/Motorola Power PC620

Motorola MC68020
IBM Power PC 601

EE314

1.Construction of MOS
2.NMOS and PMOS
3.Types of MOS
4.MOSFET Basic Operation
5.Characteristics

Chapter 12: Field

Effect Transistors

The MOS Transistor

Polysilicon Aluminum

JFET Junction Field Effect Transistor

MOSFET - Metal Oxide Semiconductor Field Effect Transistor
n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)

The MOS Transistor

Gate Oxide
Gate
Source

Polysilicon

n+

Drain
n+

p-substrate

Bulk Contact

CROSS-SECTION of NMOS Transistor

Field-Oxide
(SiO2)

p+ stopper

Switch Model of NMOS Transistor

| VGS |

Source
(of carriers)

Open (off) (Gate = 0)

Gate
Drain
(of
carriers)
Closed (on) (Gate = 1)
Ron

| VGS | < | VT |

| VGS | > | VT |

Switch Model of PMOS Transistor

| VGS |

Source
(of carriers)

Open (off) (Gate = 1)

Gate
Drain
(of carriers)

Closed (on) (Gate = 0)

Ron

| VGS | > | VDD | VT | |

| VGS | < | VDD |VT| |

MOS transistors Symbols

D

G
S

NMOS Enhancement NMOS Depletion

D

G
S

PMOS Enhancement

B
S

NMOS with
Bulk Contact

Channe
l

JFET and MOSFET Transistorsor

Symbol

L = 0.5-10 m
W = 0.5-500 m
SiO2 Thickness = 0.02-0.1 m
Device characteristics depend on L,W, Thickness, doping levels

MOSFET Transistor Fabrication Steps

Building A MOSFET Transistor Using Silicon

http://micro.magnet.fsu.edu/electromag/java/transistor/index.html

It is done. Now, how does it

work?

n-channel MOSFET Basic Operation

Operation in the Cutoff region
pn junction:
reverse bias

iD=0

for vGS<Vt0
Schematic

When vGS=0 then iD=0 until vGS>Vt0

(Vt0 threshold voltage)

n-channel MOSFET Basic Operation

Operation in the Triode Region
For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region

Resistor like characteristic

(R between S & D,
Used as voltage controlled R)
For small vDS, iD is proportional
to the excess voltage vGS-Vt0

n-channel MOSFET Basic Operation

Operation in the Triode Region

2
i D K 2 v GS Vt 0 v DS v DS

W KP
K

L 2
Device parameter KP for
NMOSFET is 50 A/V2

n-channel MOSFET Basic Operation

Operation in the Saturation Region (vDS is increased)

Tapering
of the
channel
- increments
of iD are
smaller
when
vDS is
larger

When vGD=Vt0 then the channel

thickness is 0 and

i D K v GS Vt 0

n-channel MOSFET Basic Operation

Example 12.1
An nMOS has W=160 m, L=2 m, KP= 50 A/V2 and Vto=2 V.
Plot the drain current characteristic vs drain to source voltage
for vGS=3 V.
2

i D K 2 v GS Vt 0 v DS v DS
i D K v GS Vt 0

W KP
K

L 2

n-channel MOSFET Basic Operation

Example 12.1
Characteristic

Channel length
modulation
id depends on vDS in
saturation region
(approx: iD =const in
saturation region)

2
i D Kv DS

p-channel MOSFET Basic Operation

It is constructed by interchanging the n and p regions of nchannel MOSFET.
Symbol

How does p-channel

MOSFET operate?
-voltage polarities
-iD current
-schematic

Characteristic