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IC fabrication
advancements
Working of a mosfet
When VDS>0, AND VGS> VT, the induced n type region allows the
current between the source and the drain.
Working of a mosfet
As we keep on increasing Vds,the
depeltion region near the drain
widens hence decreasing the
electron concentration and hence the
channel conductance is reduced.
Further increasing the vds, the
inversion layer eventually disappears
creating a condition of pinch-off.
Mosfet scaling
Keeping in pace with the Moores law and ITRS roadmap mosfet
scaling ,i.e, reduction in the overall size of the mosfet , helps
increase the speed, and lowering of the harmonic distortion. But
as the channel length approach and fall below 100 nm,New
characteristics are observed many of them are undesirable.
As the dimensions of the transistors are shrunk, the close
proximity between the source and drain reduces the ability of the
gate electrode to control the potential distribution and the flow of
current in the channel region, and undesirable effects,called
short-channel effects starts plaguing MOSFETs.
Short channel effects arise when the control of the channel region
by the gate is affected by electric field lines from source to drain.
Short channel effects arise when the control of the channel region by the
gate is affected by electric field lines from source to drain
Gate patterning
considerations
Application of finfet:SRAM
Silicon nano wire transistors may be a candidate for sub 10nm technology nod