Sputtering

Nanophotonics Lab
Chonnam National University

Presented By: Mr. Aadil Waseem

Sputtering

Sputter is one of the Physical Vapor Deposition Techniques;

Sputtering largely solved the problems with evaporation;
It is the dominant technique for most metal depostion, and some
dielectrics;
Similar to plasma etch systems (to be discussed later), but we are
etching the target rather than the wafer;
There are different types of sputter we use;
DC Sputter (for metals);
DC Magnetron Sputter (for metals);
RF Sputter (for dielectrics);
 DC Sputter

Target (source) and substrate are placed on two parallel

electrodes (diode);
They are placed inside a chamber filled with inert gas (Ar),
pressure is 1-100 mTorr;
DC voltage (~ kV) is applied to the diode;
Free electron in the chamber are accelerated by the e-field;
These energetic free electrons in-elastically collide with Ar
atoms
excitation of Ar gas glows
ionization of Ar Ar+ + 2nd electron
2ndelectrons repeat above process gas
breakdown discharge glow (plasma)
DC Sputter
 DC Sputter

The positive Ar ions are accelerated toward the cathode (target);

Bombarding (sputtering) the target atoms locked out from the target;
Transport to the substrate;
Generate 2nd electrons that sustains the discharge (plasma);
Major process parameters:
Operation pressure (1-100mTorr)
Power (few 100W)
For DC sputtering, voltage -2 to -5kV.
Substrate temperature (20-700C)
 Requirment for Self
Sustained Discharge
If the cathode-anode space (L) is less than the dark space length
1. Ionization, few excitation
2. Cannot sustain discharge
On the other hand, if the Ar pressure in the chamber is too low
1. Large electron mean-free path
2. 2ndelectrons reach anode before colliding with Aratoms
3. Cannot sustain discharge either
Condition for Sustain Plasma: L.P > 0.5 (cm. torr)
L = Electrode Spacing
P = Chamber Pressure
Near the cathode, electrons move much faster than ions because of smaller
mass positive charge build up near the cathode, raising the potential of plasma
 Sputter Yield

Sputter yield is defined as;

If the ion energy < 10 100 eV, there is no sputtering (Yield = 0);
If the ion energy > 10 keV, we get implatation;
We try to get sputter yield between 1 and 2;
 Pressure

Pressure plays a vital role in sputtering, sputtering will be the function of how
much Ar gas is there.
For a reasonable deposition rate, we need a reasonable Ar gass;
Pressure also impacts on mean free path, if pressure is large, mean free path will
be smaller;
Second thing is that, the distance between target and wafer must be larger than
mean free path;
So the sputtered atoms will have many many collisions before reaching wafer
resulting good step coverage;
 DC Magnetron Sputtering

Using low chamber pressure to maintain high deposition rate

Using magnetic field to confine electrons near the target to sustain plasma

Apply magnetic field parallel to the cathode surface;

Electrons will hope (cycloid) near the surface (trapped)
Impact of Magentic Field on
Ions
 RF Magnetron Sputtering

RF Sputtering is the technique involved in alternating the electrical potential of the

current in the vacuum environment at radio frequencies, to avoid a charge building up on
certain types of sputtering target materials;
RF sputtering is used for dielectrics that can take on a polarized charge;
RF Magnetron sputtering uses magnets behind the negative cathode to trap electrons over
the negatively charged target material.
Over time during ve portion of cycle, positive ions are produced on the surface of the
target giving it a +ve charge. At a certain point this charge can lead to a complete secession
of sputtering atoms being discharged for coating.
By alternating the electrical potential with RF Sputtering, the surface of the target material
can be cleaned. On the positive cycle electrons are attracted to the target material giving
it a negative bias. International minimum RF power required for sputtering is 13.56 MHz.
Comparison between
Evaporation and Sputtering
 Cleaning

If the wafer has a negative bias compared to the plasma, Ar ion will
sputter/etch the wafer;
This can be used to clean the wafer before deposition begins;
It can also remove native oxide on silicon;
Problem: it can cause damage to substrate;
Applications

In addition to IC industry, a wide range of industrial products

use sputtering: LCD, computer hard drives, hard coatings for
tools, metals on plastics.
It is more widely used for industry than evaporator;
There are very few things (rate and substrate temperature)
one can do to tailor film property.
 Advantages

Able to deposit a wide variety of metals, insulators, alloys and composites.

Replication of target composition in the deposited films.
Capable of in-situ cleaning prior to film deposition by reversing the potential
on the electrodes .
Better film quality and step coverage than evaporation.
More reproducible deposition control same deposition rate for same
process parameters (not true for evaporation), so easy film thickness control
via time.
Can use large area targets for uniform thickness over large substrates.
Sufficient target material for many depositions.
No x-ray damage.
 Disadvantages

Substrate damage due to ion bombardment or UV generated by plasma.

Higher pressures 1 100 mtorr ( < 10-5 torr in evaporation), more
contaminations unless using ultra clean gasses and ultra clean targets.
Deposition rate of some materials quite low.
Some materials (e.g., organics) degrade due to ionic bombardment.
Most of the energy incident on the target becomes heat, which must be
removed.
It is not suitable for compound or alloy deposition.
Considerable materials are deposited on chamber walls and wasted.
Thanks!
!
Any questions?