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BIPOLAR JUNCTION
TRANSISTORS
Code: Semester II
EEE2213 2010/2011
BJT STRUCTURE
Basic structure of the bipolar junction transistor (BJT) determines its
operating characteristics.
Constructed with 3 doped semiconductor regions called emitter, base,
and collector, which separated by two pn junctions.
2 types of BJT;
(1)npn: Two n regions separated by a p region
(2)pnp: Two p regions separated by an n region.
BIPOLAR:
refers to the use
of both holes &
electrons as
current carriers
in the transistor
structure.
Base-emitter junction: the pn junction joining the base region & the
emitter region.
Base-collector junction: the pn junction joining the base region & the
collector region.
A wire lead connects to each of the 3 regions. These leads labeled as;
E: emitter
B: base
C: collector
BASE REGION: lightly doped, & very thin
The base has a low density of holes, which are the majority carriers
(represented by the white circles).
Most of the free electrons that have entered the base do not recombine
with holes because the base is very thin.
I C 3.65mA
DC 73
IB 50 A
IE = IC + IB = 3.65 mA + 50 μA = 3.70 mA
I C 3.65mA
DC 0.986
I E 3.70mA
Analysis of this transistor circuit to predict the dc voltages and currents
requires use of Ohm’s law, Kirchhoff’s voltage law and the beta for the
transistor;
Application of these laws begins with the base circuit to determine the
amount of base current. Using Kichhoff’s voltage law, subtract the VBE
=0.7 V, and the remaining voltage is dropped across R B .
Determining the current for the base with this information is a matter of
applying of Ohm’s law. VRB/RB = IB
IC = βDC IB
IB IC
5 μA 0.5 mA
10 μA 1.0 mA
15 μA 1.5 mA
20 μA 2.0 mA
25 μA 2.5 mA
Cutof
With no IB , the transistor is in the cutoff region and just as the
name implies there is practically no current flow in the
collector part of the circuit. With the transistor in a cutoff state,
the full VCC can be measured across the collector and
emitter(VCE).
Active
region of
the
transistor’s
operation.
Ex 4-7
A certain transistor has a P D(max) of 1 mW at 25°C. The derating
factor is 5 mW/ °C. What is the P D(max) at a temperature of 70°C?
Transistor Datasheet
Refer Figure 4-20 (a partial datasheet for the 2N3904 npn
transistor).
The maximum collector-emitter voltage (VCEO) is 40V.
The CEO subscript indicates that the voltage is measured from
collector to emitter with the base open. VCEO= VCE(MAX)
The maximum collector current is 200 mA.
* Other characteristics can be referred from the datasheet.
A 2N3904 transistor is used in the circuit. Determine the maximum value to which V CC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
A 2N3904 transistor is used in the circuit. Determine the maximum value to which V CC
can be adjusted without exceeding a rating. Which rating would be exceeded first?
PD(max) = 800 mW
VCE(max) = 15 V
IC(max) = 100 mA.
I B 195 A
I C DC I B 19.5mA
VCC(max) = VCE(max) + VRc = 40 V + 19.5 V = 59.5 V
VCE(cutoff) = VCC
VCC 10 V
I C ( sat ) 10 mA
RC 1.0 k
I C ( sat ) 10 mA
I B (min) 50 A
DC 200
npn
42
Transistor Operation
With the external sources, VEE and VCC, connected as shown:
43
Currents in a Transistor
IE IC IB
44
CommonBase Configuration
45
Common-Base Amplifier
Input Characteristics
46
Common-Base Amplifier
Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
47
Operating Regions
48
Approximations
I I
C E
Base-emitter voltage:
49
Alpha ( )
Ideally: = 1
In reality: is between 0.9 and 0.998
50
Transistor Amplification
51
Common–Emitter Configuration
The emitter is common to both input
(baseemitter) and output (collector
emitter).
The input is on the base and the
output is on the collector.
52
CommonEmitter Characteristics
53
CommonEmitter Amplifier Currents
Ideal Currents
IE = IC + IB IC = IE
Actual Currents
54
Beta ( )
represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
In DC mode:
IC
βdc
IB
In AC mode:
IC
ac VCE constant
IB
55
Beta ( )
Determining from a Graph
2.7 mA
β DC VCE 7.5
25 A
108
56
Beta ( )
β α
α β
β1 α 1
I C βI B I E (β 1)I B
57
Common–Collector Configuration
58
Common–Collector Configuration
59
Operating Limits for Each Configuration
60
Power Dissipation
Common-base:
PCmax VCB I C
Common-emitter:
PCmax VCE I C
Common-collector:
PCmax VCE I E
61
Transistor Specification Sheet
62
Transistor Specification Sheet
63
Transistor Testing
• Curve Tracer
Provides a graph of the characteristic curves.
• DMM
Some DMMs measure DC or hFE.
• Ohmmeter
64
Transistor Terminal Identification
65