P-N Junctions

Physical aspects of pn junctions

Circuit Symbol
• Basis for other devices

Mathematical models + V -

• Depletion capacitance
• Breakdown characteristics
PHYSICAL ASPECTS OF
THE PN JUNCTION
M etallurgical Junction

p-ty pe semiconductor n-type semiconductor

iD
+vD -
Depletion
region

p-ty pe n-type
semicon- semicon-
ductor ductor

iD
+ v-D -
W
x Fig. 1.2-1
-W1 0 W2
 P-N Junctions
N-type P-type
ND NA
 P-N Junctions
N-type P-type
ND NA
 P-N Junctions
N-type P-type
ND NA

Depletion Layer or Region

 P-N Junctions
N-type P-type
ND NA

Depletion Layer or Region

qND
Charge
Density
-qNA
 P-N Junctions
N-type P-type
ND NA

Depletion Layer or Region

qND
Charge
Density
-qNA

Band
Diagram
Electrostatics in PN Junction
qND DQ = r x
Charge
Density x
-qNA
Electrostatics in PN Junction
qND DQ = r x
Charge
Density x
-qNA
Gauss' Law in 1 Dimension:
Electric Field = DQ / e
Electric Field
x
Electrostatics in PN Junction
qND DQ = r x
Charge
Density x
-qNA
Gauss' Law in 1 Dimension:
Electric Field = DQ / e
Electric Field
x

Electron Vbi = Built

Potential x in Voltage
Why is this the Equilibrium
Condition?

Vbi = built-in voltage

NAND
= kT ln ( ni 2
)
Why is this the Equilibrium
Condition?

Vbi = built-in voltage

NAND
= kT ln ( ni 2
)

Too much Vbi Too little Vbi

 P-N Junctions --- Diodes
N-type P-type
ND NA

First-Principles Model
 P-N Junctions --- Diodes
N-type P-type
ND NA

First-Principles Model
 P-N Junctions --- Diodes
N-type P-type
ND NA

100
First-Principles Model
90

80

70
Diode current (nA)
60

50

40

30

20

10

0
-0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4
Diode voltage (V)
 P-N Junctions --- Diodes
N-type P-type
ND NA

First-Principles Model
Applying Voltage to a Diode

Forward Bias

FN
-V+
FP Forward Bias
Applying Voltage to a Diode

Forward Bias
FP

FN
FN - VV+-
+
FP Reverse Bias
 Capacitance in pn Junctions

kT NAND NAND
  o = q ln 2  = UT ln 2 
 ni   ni 

W1 =
2esi(o-vD)ND
qND(NA+ND)

2esi(o-vD)NA 
W2 = qND(NA+ND) 
 Capacitance in pn Junctions

kT NAND NAND
  o = q ln 2  = UT ln 2 
 ni   ni 

W1 =
2esi(o-vD)ND
qND(NA+ND)

2esi(o-vD)NA 
W2 = qND(NA+ND) 

esiqNAND 1 Cj0
Cj = A 2(NA+ND) =
o-vD vD
1-
o
 Capacitance in pn Junctions
4.5

kT NAND NAND
  o = q ln 2  = UT ln 2  4
 ni   ni 
3.5

3 Cj0

Capacitance (fF)
W1 =
2esi(o-vD)ND
qND(NA+ND)


2.5

2esi(o-vD)NA
W2 = qND(NA+ND)  2

1.5

1
esiqNAND 1 Cj0
Cj = A 2(NA+ND) =
o-vD vD 0.5
1-
o
0
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5
Diode voltage (V)
Breakdown Voltage
 Breakdown Voltage

Caused by
Avalanche
Multiplication

Due to reaching
a critical electric field