Microelectronics Circuits

Ch4 Field-Effect Transistors(FETs)

Ch4 Field-Effect Transistors(FETs) Microwave Circuits Design Laboratory 1

 •Contents
4.1 Device Structure and Physical Operation
4.2 Current-Voltage Characteristics
4.3 MOSFET Circuits at DC
4.4 The MOSFET as an Amplifier and as a Switch
4.5 Biasing in MOS Amplifier Circuits

Sedra and Smith, “Microelectronic Circuits”, by Oxford

University Press, 2004

Ch4 Field-Effect Transistors(FETs) 2

 4.1 Device Structure and Physical Operation
• The MOSFET will be treated as a three-terminal device, with the terminals being the
gate (G), the source (S), and the drain (D).
• In normal operation these 𝑝𝑛 junctions are kept reverse-biased at all times.
• The drain will always be at a positive voltage relative to the source, the two
𝑝𝑛 junctions can be effectively cut off by simply connecting the substrate terminal to
the source terminal.
• It will be shown that a voltage applied to the gate controls current flow between source
and drain.
• This current will flow in the longitudinal direction from drain to source in the region
labeled “channel region.”

Ch4 Field-Effect Transistors(FETs) 3

 Operation with Zero Gate Voltage

• With zero voltage applied to the gate, two back-to-back diodes exist in series between
drain and source.

• One diode is formed by the 𝑝𝑛 junction between the n+ drain region and the p-type
substrate, and the other diode is formed by the 𝑝𝑛 junction between the p-type substrate
and the n+ source region.

Ch4 Field-Effect Transistors(FETs) 4

 Creating a Channel for Current Flow
1. The positive voltage on the gate causes, in the
first instance, the free holes to be repelled
from the region of the substrate under the gate.

2. These holes are pushed downward into the

substrate, leaving behind a carrier-depletion
region.

3. Positive gate voltage attracts electrons from +++++++++++++

the n+ source and drain regions into the ---------
channel region.
+++++++++++++
4. When a sufficient number of electrons
accumulate near the surface of the substrate
under the gate, an n region is in effect created,
connecting the source and drain regions.

5. If a voltage is applied between drain and

source, current flows through this induced n
region, carried by the mobile electrons.
Ch4 Field-Effect Transistors(FETs) 5
 The value of at which a sufficient number of mobile electrons accumulate in the channel
region to form a conducting channel is called the threshold voltage and is denoted 𝑉𝑡 .

The excess of 𝑣𝐺𝑆 over 𝑉𝑡 is termed the effective voltage or the overdrive voltage and is
the quantity that determines the charge in the channel.
vGS  Vt  vOV
𝜀
Cox = 𝑡𝑜𝑥 ( oxide capacitance), L = channel length, W = channel width
𝑜𝑥

Ch4 Field-Effect Transistors(FETs) 6

 Applying a Small 𝒗𝑫𝑺

• The voltage 𝑣𝐷𝑆 causes a current 𝑖𝐷 to flow through the induced n channel.

In triode region the drain current is defined as:

1 W
iD  nCox  2  vGS  Vt  vDS  vDS
2

2 L
 vGS  Vt  vDS vDS
2

W
iD  nCox  vGS  Vt  vDS
L
W
g DS  nCox  vGS  Vt 
L

Ch4 Field-Effect Transistors(FETs) 7

 Applying a Small 𝒗𝑫𝑺

• We conclude this subsection by noting that 𝑣𝐷𝑆 with kept small, the MOSFET
behaves as a linear resistance 𝑟𝐷𝑆 whose value is controlled by the gate voltage 𝑣𝐺𝑆 .

𝑙𝑘𝑙𝑘
v
rDS  DS
iD
W
rDS  nCox  vGS  Vt  𝑟 𝐷𝑆
L

Ch4 Field-Effect Transistors(FETs) 8

Operation as 𝒗𝑫𝑺 Is Increased

• Let 𝑣𝐺𝑆 be held constant at a value greater than 𝑉𝑡 .

• Let the MOSFET be operated at a constant vGS  Vt
• 𝑣𝐷𝑆 appears as a voltage drop across the length of the channel.

VG  VG  VD

Ch4 Field-Effect Transistors(FETs) 9

Operation as 𝒗𝑫𝑺 Is Increased vDS
rDS 
iD

• As 𝑣𝐷𝑆 is increased, the channel becomes more tapered and its resistance increases
correspondingly.

Ch4 Field-Effect Transistors(FETs) 10

 Operation for 𝒗𝑫𝑺 ≥ 𝑽𝒐𝒗

• Shows 𝑣𝐷𝑆 reaching 𝑉𝑜𝑣 and 𝑣𝐺𝐷 correspondingly reaching 𝑉𝑡 . The zero depth
of the channel at the drain end gives rise to the term channel pinch-off.

• Increasing 𝑣𝐷𝑆 beyond this value has no effect on the channel shape and
charge, and the current through the channel remains constant at the value
reached for 𝑣𝐷𝑆 = 𝑉𝑜𝑣 .

• The MOSFET is then said to have entered the saturation region.

𝑉𝐷𝑆𝑠𝑎𝑡 = 𝑉𝑜𝑣 = 𝑉𝐺𝑆 – 𝑉𝑡

1 𝑊 2
𝑖𝐷 = 2 𝜇𝑛 𝐶𝑜𝑥 𝑉𝑜𝑣
𝐿
1 𝑊 2
= 2 𝜇𝑛 𝐶𝑜𝑥 𝑣𝐺𝑆 − 𝑉𝑡
𝐿

Ch4 Field-Effect Transistors(FETs) 11

 The p-Channel MOSFET

Ch1 Introduction to electronics 12

 Complementary MOS or CMOS

• Shows a cross section of a CMOS chip illustrating how the PMOS and NMOS
transistors are fabricated.

Ch4 Field-Effect Transistors(FETs) 13

 4.2 Current-Voltage Characteristics

NMOS Circuit Symbol

Simplified circuit symbol to be used when the

source is connected to the body or when the effect
of the body on device operation is unimportant.

VSB  0

Ch4 Field-Effect Transistors(FETs) 14

 The 𝒊𝑫 − 𝒗𝑫𝑺 Characteristics

• The cutoff region and the triode region are useful if the MOSFET is to be utilized as a switch.
• If the MOSFET is to be used to design an amplifier, it must be operated in the saturation region.

𝑘𝑛′ = 𝜇𝑛 𝐶𝑂𝑋

non linear

Ch4 Field-Effect Transistors(FETs) 15

 The 𝒊𝑫 − 𝒗𝑫𝑺 Characteristics

• 𝑣𝐺𝑆 < 𝑉𝑡𝑛 ∶ no channel; transistor in cut-off; 𝑖𝐷 = 0

• 𝑣𝐺𝑆 = 𝑉𝑡𝑛 + 𝑣𝑂𝑉 : a channel is induced; transistor operates in the triode region or the
saturation region depending on whether the channel is continuous or pinched-off at the drain
end;

Ch4 Field-Effect Transistors(FETs) 16

 The 𝒊𝑫 − 𝒗𝑫𝑺 Characteristics

Triode Region

Continuous channel, obtained by:

𝑣𝐺𝐷 > 𝑉𝑡𝑛 or 𝑣𝐷𝑆 < 𝑣𝑂𝑉
𝑊 21 𝑊 1
Then, 𝑖𝐷 = 𝑘𝑛′ (𝑣𝐺𝑆 −𝑉𝑡𝑛 )𝑣𝐷𝑆 − 2 𝑣𝐷𝑆 or 𝑖𝐷 = 𝑘𝑛′ 𝑣𝑂𝑉 − 2 𝑣𝐷𝑆 𝑣𝐷𝑆
𝐿 𝐿

Saturation Region

Pinched-off channel, obtained by: 𝑣𝑂𝑉 = 𝑣𝐺𝑆 − 𝑉𝑡𝑛

𝑣𝐺𝐷 ≤ 𝑉𝑡𝑛 or 𝑣𝐷𝑆 ≥ 𝑣𝑂𝑉 𝑣𝐺𝑆 = 𝑣𝐺𝐷 − 𝑣𝐷𝑆
1 𝑊 1 𝑊
Then, 𝑖𝐷 = 2 𝑘𝑛′ 𝑣𝐺𝑆 − 𝑉𝑡𝑛 2
or 𝑖𝐷 = 2 𝑘𝑛′ 2
𝑣𝑂𝑉 𝑘𝑛′ = 𝜇𝑛 𝐶𝑜𝑥
𝐿 𝐿

Ch4 Field-Effect Transistors(FETs) 17

The 𝒊𝑫 − 𝒗𝑮𝑺 Characteristic

• In saturation the drain current is constant

determined by 𝑣𝐺𝑆 (or 𝑣𝑂𝑉 ) and is
independent of 𝑣𝐷𝑆 .

• The MOSFET operates as a constant-current

source where the value of the current is
determined by 𝑣𝐺𝑆 .

• The MOSFET operates as a voltage-

controlled current source.

Ch4 Field-Effect Transistors(FETs) 18

Finite Output Resistance in Saturation

• 𝑣𝐷𝑆 is increased, the channel pinch-off point is moved slightly away from the drain, toward
the source.
• The channel length is in effect reduced, from L to L−∆𝐿, a phenomenon known as channel-
length modulation.
1 𝑊
• Then, 𝑖𝐷 = 2 𝑘𝑛′ 𝐿 𝑣𝐺𝑆 − 𝑉𝑡𝑛 2 1 + 𝜆𝑣𝐷𝑆 .
• 𝜆 is a device parameter having the units of reciprocal volts 𝑉 −1 .

increased Vds widen depletion region

so effective channel length is decreased

Ch4 Field-Effect Transistors(FETs) 19

Finite Output Resistance in Saturation

• Typical set of 𝑖𝐷 − 𝑣𝐷𝑆 characteristics showing the effect of channel-length

modulation is displayed.
1
• 𝑉𝐴 = 𝜆 , (𝑉𝐴 is a device parameter with the dimensions of V).
• 𝑉𝐴 is proportional to the channel length L that the designer selects for a MOSFET.

Ch4 Field-Effect Transistors(FETs) 20

 Large-signal equivalent circuit model of the n-channel MOSFET in saturation

𝜕𝑖𝐷 −1
𝛾𝑜 ≡ 𝜕𝑣 𝑣𝐺𝑆 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
′ 𝑊 −1
𝑘𝑛 2
𝛾𝑜 = 𝜆 2 𝐿 𝑉𝐺𝑆 − 𝑉𝑡𝑛

1 1
𝛾𝑜 = 𝜆𝐼 , (𝜆 = 𝑉 )
𝐷 𝐴
𝑉𝐴
𝛾𝑜 = 𝐼𝐷

Ch4 Field-Effect Transistors(FETs) 21

 Characteristics of the p-Channel MOSFET

Simplified circuit symbol for the case where the source

is connected to the body

Ch4 Field-Effect Transistors(FETs) 22

 Characteristics of the p-Channel MOSFET

𝑣𝐺𝑆 ≤ 𝑉𝑡 (Induced channel)

𝑣𝐷𝑆 ≥ 𝑣𝐺𝑆 − 𝑉𝑡 (Continuous channel)
𝑣𝐷𝑆 ≤ 𝑣𝐺𝑆 − 𝑉𝑡 (Pinched-off channel)

Ch4 Field-Effect Transistors(FETs) 23

 VD  VG
4.3 MOSFET Circuits at DC
NMOS is in saturation region
Example
Determine the values of 𝑅𝐷 and 𝑅𝑆 .
𝐼𝐷 = 0.4 mA, 𝑉𝐷 = 0.5 V, 𝑉𝑡 = 0.7 V, 𝜇𝑛 𝐶𝑜𝑥 = 100 𝜇A/𝑉 2 ,
L = 1 𝜇m, and W = 32 𝜇m. (i.e., assume that λ = 0).
𝑉𝐷𝐷 −𝑉𝐷 2.5−0.5
𝑅𝐷 = = = 5𝑘Ω
𝐼𝐷 0.4
1 𝑊 2
𝐼𝐷 = 𝜇𝑛 𝐶𝑜𝑥 𝑉𝑂𝑉
2 𝐿
1 32 2
400 = × 100 × 𝑉𝑂𝑉
2 1
𝑉𝑂𝑉 = 0.5𝑉
𝑉𝐺𝑆 = 𝑉𝑡 + 𝑉𝑂𝑉 = 0.7 + 0.5 = 1.2V
𝑉𝑆 −𝑉𝑆𝑆 −1.2− −2.5
𝑅𝑆 = = = 3.25 𝑘Ω
𝐼𝐷 0.4

Ch4 Field-Effect Transistors(FETs) 24

 Example VGS  Vt
What is the 𝑟𝐷𝑆 at this operating point? VDS  VGS  Vt
𝑊
𝑉𝑡 = 1𝑉, 𝜇𝑛 𝐶𝑜𝑥 𝐿 = 1𝑚𝐴/𝑉 2 . NMOS is in triode region
The MOSFET is operating in the triode region.

𝑊 1 2
𝐼𝐷 = 𝜇𝑛 𝐶𝑜𝑥 𝑉𝐺𝑆 − 𝑉𝑡 𝑉𝐷𝑆 − 𝑉𝐷𝑆
𝐿 2
1
𝐼𝐷 = 1 × 5 − 1 × 0.1 − × 0.01
2
= 0.395 𝑚𝐴

𝑉𝐷𝐷 −𝑉𝐷 5−0.1

𝑅𝐷 = = = 12.4 𝑘Ω
𝐼𝐷 0.395
𝑉 0.1
𝑟𝐷𝑆 = 𝐷𝑆 = = 253 Ω
𝐼𝐷 0.395

Ch4 Field-Effect Transistors(FETs) 25

 VDS  VGS  Vt
EXERCISES
NMOS is in saturation region
Find the value of R.
𝑾
𝑽𝑫 = 𝟎. 𝟖𝑽, 𝑽𝒕 = 𝟎. 𝟓𝑽, 𝝁𝒏 𝑪𝒐𝒙 = 𝟎. 𝟒𝒎𝑨/𝑽𝟐 , 𝑳 = 𝟒, 𝒂𝒏𝒅 𝝀 = 𝟎.

1 𝑊 2
𝐼𝐷 = 𝜇𝑛 𝐶𝑜𝑥 𝑉𝐺𝑆 − 𝑉𝑡
2 𝐿
1
= 0.4 × 10−3 × 4 × 0.8 − 0.5 2 , (𝑉𝐷 = 𝑉𝐺 , 𝑉𝐺𝑆 = 0.8𝑉)
×
2
= 0.072 𝑚𝐴

1.8−𝑉𝐷
𝑅=
𝐼𝐷
1.8−0.8
=
0.072
= 13.9 𝑘Ω

Ch4 Field-Effect Transistors(FETs) 26

 4.4 The MOSFET as an Amplifier and as a Switch

The basic structure of the most commonly used MOSFET

amplifier, the common-source(CS) circuit.

𝑉𝐷𝐷 𝑣
𝑖𝐷 = − 𝑅𝑂 𝑣𝑂 = 𝑣𝐷𝑆
𝑅𝐷 𝐷

Ch4 Field-Effect Transistors(FETs) 27

 Large-Signal Operation-The Transfer Characteristic

• Graphical construction to determine the voltage transfer

characteristic of the amplifier.

vDS  vGS  Vt

𝑉𝐷𝐷 𝑣
𝑖𝐷 = − 𝑅𝑂 , 𝑣𝑂 = 𝑣𝐷𝑆
𝑅𝐷 𝐷
VDD
1
Slope  
RD

RD

Ch4 Field-Effect Transistors(FETs) 28

 switching transfer curve

• The MOSFET amplifier with a small time-varying signal 𝑣𝑔𝑠 (t)

superimposed on the dc bias voltage 𝑉𝐺𝑆 .

𝑣𝑂 = 𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝑖𝐷

Operation as a Switch

• When the MOSFET is used as a switch, it is

operated at the extreme points of the transfer
curve.

Operation as a Linear Amplifier

• To operate the MOSFET as an amplifier we

make use of the saturation-mode segment of
the transfer curve.

Ch4 Field-Effect Transistors(FETs) 29

4.5 Biasing in MOS Amplifier Circuits

Biasing by Fixing 𝑽𝑮𝑺

• The most straightforward approach to biasing a

MOSFET is to fix its gate-to-source voltage 𝑉𝐺𝑆 .

• 𝑉𝑡 and 𝜇𝑛 depend on temperature, with the

result that if we fix the value of 𝑉𝐺𝑆 , the
drain current 𝐼𝐷 becomes very much
error
temperature dependent.

• Observe that for the fixed value of 𝑉𝐺𝑆 , the

resultant spread in the values of the drain
current can be substantial.

 Devices 1 and 2 represent extremes among

units of the same type.

Ch4 Field-Effect Transistors(FETs) 30

Biasing by Fixing Vg and Connecting a Resistance
in the Source

𝑉𝐺 = 𝑉𝐺𝑆 − 𝑅𝑆 𝐼𝐷  The action of 𝑅𝑆 works to keep 𝐼𝐷 as constant as

possible.
VG VGS
ID  
RS RS

VG
RS

VG
 VG 
 0,  , VG ,0 
R 1
Slope  S  
 RS  VG RS
1
Ch4 Field-Effect Transistors(FETs) 31
 Biasing Using a Drain-to-Gate Feedback
Resistor
𝑉𝐺𝑆 = 𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝐼𝐷
𝑉𝐷𝐷 = 𝑉𝐺𝑆 + 𝑅𝐷 𝐼𝐷

 The negative feedback provided by 𝑅𝐺 works

Typically, RG M 
to keep the value of 𝐼𝐷 as constant as possible.

1 W
iD  nCox  vGS  Vt 
2

2 L
1 W
iD  nCox  vGS  Vt  v     iD  
2

2 L GS

 iD     vGS   v
GS     iD  
VDD (constant )  VGS  RDiD
V GS     iD  

Ch4 Field-Effect Transistors(FETs) 32

 Biasing Using a Constant-Current Source

• The most effective scheme for biasing a MOSFET

amplifier is that using a constant-current source.

• 𝑅𝐺 establishes a dc ground at the gate and presents

a large resistance to an input signal source that can
be capacitively coupled to the gate.

• 𝑅𝐷 establishes an appropriate dc voltage at the drain

to allow for the required output signal swing while
ensuring that the transistor always remains in the
saturation region.
VD  VG  Vt  Saturation 
VDD  RD I D  VD
VDD  RD I D  Vt VG  0 

Ch4 Field-Effect Transistors(FETs) 33

 Biasing Using a Constant-Current Source

• Implementation of the constant-current source

𝐼𝐷2 using a current mirror.
• The heart of the circuit is transistor 𝑄1 , whose
drain is shorted to its gate, and thus is operating in
the saturation region.
1 𝑊
𝐼𝐷1 = 𝜇𝑛 𝐶𝑜𝑥 𝑉𝐺𝑆 − 𝑉𝑡 2
2 𝐿 1
• The drain current of 𝑄1 is supplied by 𝑉𝐷𝐷 through
resistor R.
• Since the gate currents are zero,
𝑉𝐷𝐷 + 𝑉𝑆𝑆 − 𝑉𝐺𝑆
𝐼𝐷1 = 𝐼𝑅𝐸𝐹 =
𝑅
• Consider transistor 𝑄2 : It has the same 𝑉𝐺𝑆 as 𝑄1 ;
thus if we assume that it is operating in saturation,
its drain current, which is the desired current 𝐼𝐷2
of the current source, will be
1 𝑊
𝐼𝐷2 = 𝜇𝑛 𝐶𝑜𝑥 𝑉𝐺𝑆 − 𝑉𝑡 2
2 𝐿 2

Ch4 Field-Effect Transistors(FETs) 34

 Biasing Using a Constant-Current Source

• Thus 𝐼 is related to 𝐼𝑅𝐸𝐹 by the ratio of the

aspect ratios of 𝑄1 and 𝑄2 .

W 
 
 I D1   2
L
I D2
W 
 
 L 1
W 
 
 I REF  L 2
W 
 
 L 1

• This circuit, known as a current mirror.

Ch4 Field-Effect Transistors(FETs) 35
 Thank you

Ch4 Field-Effect Transistors(FETs) 36