QRS DDT

CEE 468
Industrial Electronics
1
PART 5-1
The Power MOSFET
2
Introduction
 Power semiconductor devices represent the
‘‘heart’’ of modern power electronics, with two
major desirable characteristics of power
semiconductor devices guiding their
development:
 1. Switching speed (turn-on and turn-off times);

and
 2. Power handling capabilities (voltage blocking
and current carrying capabilities).
3
The Need for Switching in Power
Electronic Circuits
 Efficiency is considered an important figure of
merit and has significant implications for overall
system performance.
 Low efficiency power systems, large amounts of

power are dissipated in the form of heat, which
results in one or more of the following
implications:
4
Electronic Circuits
 Efficiency is considered an important figure of
merit and has significant implications for overall
system performance.
 Low efficiency power systems, large amounts of

power are dissipated in the form of heat.
 High-power dissipation forces the switch to

operate at low switching frequency, resulting in
limited bandwidth, and the size and weight of
magnetic components (inductors and
transformers) and capacitors remain large.
5
Electronic Circuits
 Therefore, it is always desired to operate
switches at very high frequencies.
 However, we will show later that as the switching
frequency increases, the average switching power
dissipation increases.
 Hence, a trade-off must be made between
reduced size, weight and cost of components
versus reduced switching power dissipation,
which means inexpensive low switching
frequency devices.
6
Electronic Circuits
7
Electronic Circuits
8
Electronic Circuits
9
Electronic Circuits
10
Electronic Circuits
100% efficiency
11
General Switching Characteristics
 The Ideal Switch:
 For a semiconductor device to operate as an ideal switch, it
must possess the following features:
12
 The Ideal Switch:
 The switching waveforms for an ideal switch are shown in
Fig. 6.2, where isw and vsw are the current through and the
voltage across the switch, respectively.
13
 The Practical Switch
 The practical switch has the following switching
and conduction characteristics:
1) Limited conduction current when the switch is in the on-
state, and limited blocking voltage when the switch is in the
off-state.
2) Limited switching speed caused by the finite turn-on and
turn-off times.
3) Finite on-state and off-state resistances,
 Because of characteristics 2 and 3, the practical switch
experiences power losses in the on- and off-states(known as
conduction loss), and during switching transitions (known as
switching loss).
14
 The typical switching waveforms of a practical switch are
shown in Fig. 6.3a.
15
 EXAMPLE 6.2. Consider a linear approximation of Fig.
 6.3a as shown in Fig. 6.4a: (a) give a possible circuit
implementation using a power switch whose switching
waveforms are shown in Fig. 6.4a;
16
 (b) derive the expressions for the instantaneous switching
and conduction power losses and sketch them;
 (c) determine the total average power dissipated in the
circuit during one switching frequency; and
 (d) determine the maximum power.
17
 SOLUTION 6.2.
 When the switch is off, the blocking voltage across the
switch is VOFF, which can be represented as a dc voltage
source of value VOFF reflected somehow across the switch
during the off-state.
 When the switch is on, the current through the switch equals
ION, and hence a dc current is needed in series with the
switch when it is in the on-state
18
 SOLUTION 6.2.
 This suggests that when the switch turns off again, the
current in series with the switch must be diverted
somewhere else (this process is known as commutation)
 As a result, a second switch is needed to carry the main

current from the switch being investigated when it is
switched off.
19
 However, as isw and vsw are linearly related as shown in Fig.
6.4, a resistor will do the trick and a second switch is not
needed.
20
21
22
23
24
25
 The first expression represents the total switching loss and

the second represents the total conduction loss over one
switching cycle. We notice that as frequency increases,
average power increases linearly.
26
27
The Power MOSFET
 Unlike the bipolar junction transistor (BJT), the
MOSFET device belongs to the unipolar device
family, because it uses only the majority carriers
in conduction.
 Unlike low-power (signal devices), high-power

devices are more complicated in structure, driver
design, and their operational i-v characteristics
are difficult to understand.
28
The Power MOSFET
 The device symbol for a p- and n-channel enhancement and
depletion types are shown in Fig. 6.5.
29
The Power MOSFET
 Figure 6.6 shows the i-v characteristics for the n-channel
enhancement-type. MOSFET.
30
The Power MOSFET
 Unlike the lateral channel MOSET devices used in much of
the IC technology in which the gate, source and drain
terminals are located at the same surface of the silicon
wafer, power MOSFETs use vertical channel structure in
order to increase the device power rating [1].
31
The Power MOSFET
 In the vertical channel structure, the source and drain are
on opposite side of the silicon wafer. Figure 6.7a shows a
vertical cross-sectional view for a power MOSFET.
32
The Power MOSFET
 Figure 6.7b shows a more simplified representation. There
are several discrete types of the vertical structure power
MOSFET available commercially today, including V-MOSFET,
U-MOSFET, D-MOSFET, and S-MOSFET [1, 2].
33
The Power MOSFET
 The modern power MOSFET has an internal diode called a
body diode connected between the source and the drain as
shown in Fig. 6.8a. This diode provides a reverse direction
for the drain current, allowing a bidirectional switch
implementation.
34
The Power MOSFET
 In some power electronic applications that require the use
of ultra-fast diodes, an external fast recovery diode is
added in antiparallel fashion after blocking the body diode
by a slow recovery diode as shown in Fig. 6.8b.
35

QRS DDT

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

QRS DDT

Uploaded by

Copyright:

Available Formats

CEE 468

 1. Switching speed (turn-on and turn-off times);

 Low efficiency power systems, large amounts of

 Low efficiency power systems, large amounts of

 High-power dissipation forces the switch to

 As a result, a second switch is needed to carry the main

 The first expression represents the total switching loss and

 Unlike low-power (signal devices), high-power

You might also like