BJT AC ANALYSIS

BJT Transistor Modeling

• A model is an equivalent circuit that represents
the AC characteristics of the transistor.

• A model uses circuit elements that approximate

the behavior of the transistor.

• There are two models commonly used in small

signal AC analysis of a transistor:

– re model
– Hybrid equivalent model
1. Setting all dc sources to zero and replacing them
by a short-circuit equivalent

2. Replacing all capacitors by a short-circuit

equivalent

3. Removing all elements bypassed by the short-

circuit equivalents introduced by steps 1 and 2

4. Redrawing the network in a more convenient

and logical form
 The re Transistor Model

 BJTs are basically current-controlled devices, therefore

the re model uses a diode and a current source to duplicate
the behavior of the transistor.

 One disadvantage to this model is its sensitivity to the DC

level. This model is designed for specific circuit conditions.
 26 mV
re 
Ie

Ib Ic Ib Ic

hie hfeIb re Ib

Hybrid model re model

• The input is applied to the base
• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and output is 180
2. Substitute BJT
with re model.

3. Determine the BJT model parameters, Zi, Zo, Av, and Ai

Input impedance:
Z i  R B ||  re
Z i   re R E  10 re

Output impedance:
Z o  R C || rO
Z o  R C ro  10R C

Voltage gain: Current gain:

Vo (R || r )
Av   C o I  R B ro
Vi re Ai  o 
I i (ro  R C )(R B   re )
RC
Av   ro  10R C
re A i   ro  10R C , R B  10 re

Current gain from voltage gain:

Zi
A i  A v
Zo
 Common-Emitter Emitter-Bias Configuration
(Bypassed RE)

VCC
RC
C2
RB
RB
C1
Vo

Vi

RE CE
Input impedance : Zi  RB re
Output impedance : Zo  RC ro  RC If ro ≥ 10RC

Voltage Gain :
Vo  I b RC ro  Vi  re I b
Vo RC ro
Av  
Vi re
Current Gain : ro I b RB I i
Io  Ib 
ro  RC RB  re

Io ro  RB
Ai  
I i ro  RC RB  re
Common-Emitter Emitter-Bias Configuration
(Unbypassed RE)
 Voltage gain:
Vo R C
Input impedance: Av  
Vi Zb
Z i  R B || Z b Vo RC
Av  
Z b   re  (  1)R E Vi re  R E Z b  (re  R E )

Z b  (re  R E ) Vo R
Av    C Z b  R E
Vi RE
Z b  R E

Current gain:

Output impedance: I R B
Ai  o 
I i R B  Zb
Zo  R C If ro=∞

Current gain from voltage gain:

Zi
A i  A v
ZO
re model requires you to determine , re, and ro.
Input impedance:
R   R 1 || R 2
Z i  R  ||  re

Output impedance:
Z o  R C || ro
Z o  R C ro  10R C Current gain:
I  R ro
Voltage gain: Ai  o 
I i (ro  R C )(R    re )
Vo  R C || ro
Av   I R
Vi re Ai  o  r  10R C
Vo R I i R    re o
Av    C ro  10R C
Vi re I
A i  o   ro  10R C , R   10 re
Ii

Current gain from voltage gain:

Z
Ai  A v i
RC
• This is a variation of the
common-emitter fixed-bias
configuration
• Input is applied to the base
• Output is taken from the
collector
• There is a 180 phase shift
between input and output
Input impedance:
re
Zi 
1 RC

 RF

Output impedance:
Z o  R C || R F

Voltage gain:
Vo R
Av   C
Vi re

Current gain:
I R F
Ai  o 
Ii R F  R C
I R
Ai  o  F
Ii RC
This model can be applied to
any current- or voltage-
controlled amplifier.

Adding a load reduces the

gain of the amplifier:

Vo RL
Av   A vNL
Vi R L  R o
Zi
Ai  A v
RL
The fraction of applied signal that reaches the input of the
amplifier is:
R i Vs
Vi 
Ri  Rs

The internal resistance of the signal source reduces the overall gain:

Vo Ri
A vs   A vNL
Vs R i  R s
 Vo R L A vNL
Effects of RL: Av  
Vi RL  Ro
R
Ai  A v i
RL

Effects of RL and RS: Vo Ri RL

A vs   A vNL
Vs R i  R s R L  R o
R  Ri
A is   A vs s
RL