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Dr Zainovia Lockman
Principle of Diode
LASER
Laser 2
Recap
What is the word LASER
stands for?
Light amplification by Stimulated
Emission of Radiation
What is Population
Inversion?
Laser 2. Lecture Content:
E1 E1 E1
h 13
E E E E
2 2 2 2
Metastable IN OUT
state
h 2 1 h 21
E Coherent photons
E 1 E E
1 1 1
( a) (b ) (c) (d )
E
(a) v (b)
Optical gain
EF n EF p
CB
EF n
Electrons
Ec in CB
eV 0 h
Eg
Ev Holes in VB
= Empty states At T > 0
EF p
VB At T = 0
Optical absorption
Density of states
(a) (b )
(a) The density of states and energy distribution of electrons and holes in
the conduction and valence bands respectively at T 0 in the SCL
under forward bias such that E Fn E Fp > E g . Holes in the VB are empty
states. (b) Gain vs. photon energy.
© 1999 S.O. Kasap, Optoelectronics (Prentice Hall)
Population Inversion in Diode
Laser More electrons in
the conduction
band near EC
CB
EFn
Electrons in CB
eV Eg
Than electrons in
Holes in VB the valance band
EFp near EV
VB
EFn-EfP = eV
There is therefore a population inversion between
eV > Eg energies near EC and near EV around the junction.
eV = forward bias voltage
This only achieved when degenerately doped p-n
Fwd Diode current pumping junction is forward bias with energy > Egap
injection pumping
The Lasing Action
The population inversion region is a layer along the
junction also call inversion layer or active region
Now consider a photon with E = Eg
Obviously this photon can not excite electrons from
EV since there is NO electrons there
However the photon CAN STIMULATE electron to
fall down from CB to VB.
Therefore, the incoming photon stimulates emission
than absorption
The active region is then said to have ‘optical gain’
since the incoming photon has the ability to cause
emission rather than being absorbed.
Pumping Mechanism in
Laser Diode
GaN used